Datasheet FDT3612 Datasheet (Fairchild Semiconductor)

FDT3612

100V N-Channel PowerTrench



MOSFET

FDT3612

March 2001

General Description

This N-Channel MOSFET has been designed
specifically to i mprove the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM c ontrollers.

These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable

specifications. The result is a MOSFET that is

R

DS(ON)

easy and safer to drive (even at very high frequenc ies),
and DC/DC power supply designs with higher overall
efficiency.

Applications

• DC/DC converter

Features

• 3.7 A, 100 V. R
R

• Fast switching speed

• Low gate charge (14nC typ)

• High performance trench te chnology for extremely

low R

DS(ON)

• High power and current handling capability in a
widely used surface mount pac kage

= 120 mΩ @ VGS = 10 V

DS(ON)

= 130 mΩ @ VGS = 6 V

DS(ON)

• Motor driving

D

D

S

SOT-22 3

D

G

SG

D

Absolute Maximum Ratings T

o

=25

C unless otherwise noted

A

D

SOT-223

(J23Z)

S

G

*

D

G

S

Symbol Parameter Ratings Units

V

Drain-Source Voltage 100 V

DSS

V

Gate-Source Voltage

GSS

±20
ID Drain Current – Continuous (Note 1a) 3.7 A
– Pulsed 20
PD

TJ, T

STG

Maximum Power Dissipation (Note 1a) 3.0
(Note 1b)

(Note 1c)

1.3

1.1

Operating and Storage Junction Temperature Range –55 to +150

V

W

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a) 42

(Note 1) 12

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

3612 FDT3612 13’’ 12mm 2500 units

2001 Fairchild Semiconductor Corporation

°C/W
°C/W

FDT3612 Rev. C1 (W)

FDT3612

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Drain-Source Avalanche Ratings (Note 2)

W

Drain-Source Avalanche Energy Single Pulse, VDD = 50 V, ID= 3.7 A 90 mJ

DSS

IAR Drain-Source Avalanche Current 3.7 A

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 10

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature
Coefficient

J

Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA

= 0 V, ID = 250 µA

V

GS

= 250 µA, Referenced to 25°C

I

D

100 V

106

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = 10 V, VDS = 10 V 10 A

D(on)

= VGS, ID = 250 µA

V

DS

= 250 µA, Referenced to 25°C

I

D

VGS = 10 V, ID = 3.7 A

= 6 V, ID = 3.5 A

V

GS

V

= 10 V, ID = 3.7A, TJ = 125°C

GS

gFS Forward Transconductance VDS = 10 V, ID = 3.7 A 11 S

2 2.5 4 V

–6

88
94

170

120
130
245

mV/°C

mΩ

Dynamic Characteristics

C

Input Capacitance 632 pF

iss

C

Output Capacitance 40 pF

oss

C

Reverse Transfer Capacitance

rss

= 50 V, V

V

DS

f = 1.0 MHz

= 0 V,

GS

20 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 8.5 17 ns

d(on)

tr Turn–On Rise Time 2 4 ns
t

Turn–Off Delay Time 23 37 ns

d(off)

tf Turn–Off Fall Time
Qg Total Gate Charge 14 20 nC
Qgs Gate–Source Charge 2.4 nC
Qgd Gate–Drain Charge

= 50 V, ID = 1 A,

V

DD

= 10 V, R

V

GS

V

= 50 V, ID = 3.7 A,

DS

V

= 10 V

GS

GEN

= 6 Ω

4.5 9 ns

3.8 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 2.5 A
VSD Drain–Source Diode Forward

Voltage

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

is guaranteed by design while R

θJC

a) 42°C/W when

mounted on a 1in
pad of 2 oz copper

is determined by the user's board design.

θCA

2

VGS = 0 V, IS = 2.5 A (Note 2)

b) 95°C/W when

mounted on a .0066

2

pad of 2 oz

in
copper

0.75 1.2 V

c) 110°C/W when mounted on a

minimum pad.

FDT3612 Rev. C1 (W)

)

E

)

)

Typical Characteristics

FDT3612

20

VGS = 10V

16

12

8

, DRAIN CURRENT (A

D

I

4

0

02468

5.0V

, DRAIN-SOURCE VOLTAGE (V)

V

DS

4.5V

4.0V

3.5V

1.8

1.6

VGS = 4.0V

4.5V

5.0V

6.0V
10V

1

0 4 8 12 16 20

, DRAIN CURRENT (A)

I

D

, NORMALIZED

R

1.4

1.2

DS(ON)

DRAIN-SOURCE ON-RESISTANCE

0.8

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2.2
ID = 3.7A

2

= 10V

V

GS

1.8

1.6

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

0.6

DRAIN-SOURCE ON-RESISTANC

0.4

-50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (oC)

J

0.4

0.3

0.2

, ON-RESISTANCE (OHM)

0.1

DS(ON)

R

0

345678910

V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = 125oC

TA = 25oC

ID = 1.9 A

Figure 3. On-Resistance Variation with

Temperature.

20

VDS = 10V

16

12

8

, DRAIN CURRENT (A

D

I

4

0

22.533.544.55

TA = 125oC

-55oC

, GATE TO SOURCE VOLTAGE (V)

V

GS

25oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A

S

I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

V

, BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDT3612 Rev. C1 (W)

)

Typical Characteristics

FDT3612

10

ID = 3.7A

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

V

0

0 2 4 6 8 10 12 14 16

, GATE CHARGE (nC)

Q

g

VDS = 40V

80V

60V

800

700
600

500
400
300

CAPACITANCE (pF)

200

100

0

C

RSS

0 20406080100

, DRAIN TO SOURCE VOLT AGE ( V )

V

DS

C

ISS

C

OSS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

1

VGS = 10V

SINGLE PULSE

, DRAIN CURRENT (A

0.1

D

I

0.01

= 110oC/W

R

θ

JA

T

= 25oC

A

0.1 1 10 100 1000

DC

, DRAIN-SOURCE VOL TAGE ( V )

V

DS

10s

100ms

1s

10ms

100µs
1ms

40

SINGLE PULSE

= 110°C/W

R

θ

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100

, TIME (sec)

t

1

JA

T

= 25°C

A

f = 1MHz

= 0 V

V

GS

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.2

0.1

0.01

r(t), NORMALIZED EFFECTIVE

0.001

TRANSIENT THERMAL RESISTANCE

0.0001 0.001 0.01 0.1 1 10 100 1000

0.1

0.05

0.02

0.01

SINGLE PULSE

t

, TIME (sec)

1

R

(t) = r(t) + R

θJA

R

= 110°C/W

JA

θ

)

P(pk

t

1

t

T

- TA = P * R

J

Duty Cycle, D = t

θJA

2

(t)

θJA

/ t

1

2

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDT3612 Rev. C1 (W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOL T™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™



FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™

OPTOPLANAR™
PACMAN™
POP™
PowerTrench



QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART ST ART™
Stealth™



SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET



VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H2