Datasheet FDD770N15A Specification

FDD770N15A

N-Channel PowerTrench® MOSFET

150 V, 18 A, 77 mΩ

FDD770N15A — N-Channel PowerTrench

April 2015

Features

•R

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low

• High Power and Current Handling Capability

• RoHS Compliant

= 61 mΩ ( Typ.) @ VGS = 10 V, ID = 12 A

DS(on)

R

DS(on)

D

G

S

Absolute Maximum Ratings

Symbol Parameter FDD770N15A Unit

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

P

D

TJ, T

STG

T

L

Drain to Source Voltage 150 V

Gate to Source Voltage

Drain Current

Drain Current - Pulsed (Note 1) 36 A
Single Pulsed Avalanche Energy (Note 2) 31.7 mJ

Power Dissipation

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

D-PAK

TC = 25oC unless otherwise noted.

- DC ±20

- AC (f > 1 Hz) ±30

- Continuous (TC = 25oC, Silicon Limited) 18

- Continuous (T

(T

= 25oC) 56.8 W

C

- Derate Above 25

Description

This N-Channel MOSFET is produced using Fairchild Semicon­ductor’s advanced PowerTrench® process that has been tai­lored to minimize the on-state resistance while maintaining
superior switching performance.

Applications

• DC to DC Converters

• Synchronous Rectification for Server / Telecom PSU

• Battery Charger

• AC motor drives and Uninterruptible Power Supplies

•Off-line UPS

D

G

S

= 100oC, Silicon Limited) 11.4

C

o

C0.46W/

300

o

o

®

MOSFET

V

A

o

C

C

C

Thermal Characteristics

Symbol Parameter

R

θJC

R

θJA

©2012 Fairchild Semiconductor Corporation
FDD770N15A Rev. 1.2

Thermal Resistance, Junction to Case, Max. 2.2

Thermal Resistance, Junction to Ambient, Max. 87

FDD770N15A

1

Unit

o

C/W

www.fairchildsemi.com

Package Marking and Ordering Information

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity

FDD770N15A FDD770N15A DPAK Tape and Reel 330 mm 16 mm 2500 units

FDD770N15A — N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted.

C

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics

BV
ΔBV

/ ΔT

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 - - V
Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, Referenced to 25oC - 0.0824 - V/oC

D

V

= 120 V, V

DS

= 120 V, V

V

DS

= 0 V - - 1

GS

= 0 V, TC = 125oC - - 500

GS

= 0 V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250 μA2.0-4.0V

Static Drain to Source On Resistance VGS = 10 V, ID = 12 A - 61 77 mΩ

= 10 V, ID = 12 A

Forward Transconductance

V

DS

-20-S

Dynamic Characteristics

C

iss

C

oss

C

rss

C

oss(er)

Q

g(tot)

Q

gs

Q

gd

V

plateau

Q

sync

Q

oss

Input Capacitance

Output Capacitance - 64 85 pF

Reverse Transfer Capacitance - 3.9 6 pF

= 75 V, VGS = 0 V,

V

DS

f = 1 MHz

Energy Related Output Capacitance VDS = 75 V, VGS = 0 V - 113 - pF

Total Gate Charge at 10V

V

= 75 V, ID = 12 A,

Gate to Source Gate Charge - 2.7 - nC

Gate to Drain “Miller” Charge - 1.8 - nC

Gate Plateau Volatge - 5.7 - V

Total Gate Charge Sync.

DS

V

= 10 V

GS

(Note 4)

V

= 0 V, ID = 6 A

DS

Output Charge VDS = 37.5 V, VGS = 0 V - 14 - nC

ESR Equivalent Series Resistance (G-S) f = 1 MHz - 0.5 - Ω

- 575 765 pF

-8.411nC

-6.9-nC

μA

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 3.1 16.2 ns

Turn-Off Delay Time - 15.8 41.6 ns

Turn-Off Fall Time - 2.8 15.6 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive rating: pulse-width limited by maximum junction temperature.

2. L = 3 mH, IAS = 4.6 A, starting TJ = 25°C.

3. ISD ≤ 12 A, di/dt ≤ 200 A/μs, VDD ≤ BV

4. Essentially independent of operating temperature typical characteristics.

©2012 Fairchild Semiconductor Corporation
FDD770N15A Rev. 1.2

Maximum Continuous Drain to Source Diode Forward Current - - 18 A

Maximum Pulsed Drain to Source Diode Forward Current - - 36 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 109 - nC

, starting TJ = 25°C.

DSS

= 75 V, ID = 12 A,

V

DD

V

= 10 V, RG = 4.7 Ω

GS

(Note 4)

= 0 V, I

GS

= 0 V, VDD = 75 V, I

V

GS

dI

/dt = 100 A/μs

F

= 12 A - - 1.25 V

SD

= 12 A,

SD

2

-10.330.6ns

- 56.4 - ns

www.fairchildsemi.com

Typical Performance Characteristics

0.1 1 7

0.5

1

10

100

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

I

D

, Drain Current[A]

V

, Drain-Source Voltage[V]

V

GS

= 15.0V

10.0V

8.0V

7.0V

6.5V

6.0V

5.5V

34567

1

10

50

-55oC

150oC

*Notes:

1. V

DS

= 10V

2. 250

μs Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0 1020304050

0.05

0.06

0.07

0.08

0.09

0.10

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0.4 0.6 0.8 1.0 1.2 1.4

1

10

100

*Notes:

1. V

GS

= 0V

2. 250

μs Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0.1 1 10 100 200

1

10

100

1000

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MHz

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

0246810

0

2

4

6

8

10

*Note: ID = 12A

VDS = 30V
V

DS

= 75V

V

DS

= 120V

V

GS

, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDD770N15A — N-Channel PowerTrench

®

MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

©2012 Fairchild Semiconductor Corporation
FDD770N15A Rev. 1.2

3

www.fairchildsemi.com

Typical Performance Characteristics (Continued)

-80 -40 0 40 80 120 160

0.90

0.95

1.00

1.05

1.10

*Notes:

1. V

GS

= 0V

2. I

D

= 250μA

BV

DSS

, [Normalized]

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

-80 -40 0 40 80 120 160

0.4

0.8

1.2

1.6

2.0

2.4

*Notes:

1. V

GS

= 10V

2. I

D

= 12A

R

DS(on)

, [Normalized]

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

25 50 75 100 125 150

0

5

10

15

20

R

θJC

= 2.2oC/W

VGS = 10V

I

D

, Drain Current [A]

TC, Case Temperature [oC]

1 10 100 200

0.01

0.1

1

10

60

100μs

1ms

10ms

100ms

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

Operation in This Area
is Limited by R

DS(on)

SINGLE PULSE

T

C

= 25oC

T

J

= 150oC

R

θJC

= 2.2oC/W

DC

0 25 50 75 100 125 150

0.0

0.2

0.4

0.6

0.8

E

OSS

, [μJ]

VDS, Drain to Source Voltage [V]

0.001 0.01 0.1 1 10

1

10

20

TJ = 25 oC

TJ = 125 oC

t

, TIME IN AVALANCHE (ms)

I

AS

, AVALANCHE CURRENT (A)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

FDD770N15A — N-Channel PowerTrench

®

MOSFET

Figure 11. Eoss vs. Drain to Source Voltage Figure 12. Unclamped Inductive

Switching Capability

©2012 Fairchild Semiconductor Corporation
FDD770N15A Rev. 1.2

4

www.fairchildsemi.com

Typical Performance Characteristics (Continued)

10

-5

10

-4

10

-3

10

-2

10

-1

1

0.05

0.1

1

2.5

0.01

0.1

0.2

0.05

0.02

*Notes:

1. Z

θJC

(t) = 2.2oC/W Max.

2. Duty Factor, D= t

1/t2

3. TJM - TC = PDM * Z

θJC

(t)

0.5

Single pulse

Thermal Response [Z

θJC

]

Rectangular Pulse Duration [sec]

t

1

P

DM

t

2

Z

θ

JC

(t), Thermal Response [

o

C/W]

t1, Rectangular Pulse Duration [sec]

Figure 13. Transient Thermal Response Curve

FDD770N15A — N-Channel PowerTrench

®

MOSFET

©2012 Fairchild Semiconductor Corporation
FDD770N15A Rev. 1.2

5

www.fairchildsemi.com

V

GS

V

DS

10%

90%

t

d(on)tr

t

on

t

off

t

d(off )

t

f

V

DD

10V

V

DS

R

L

DUT

R

G

V

GS

V

GS

V

DS

10%

90%

t

d(on)tr

t

on

t

off

t

d(off )

t

f

V

DD

10V

V

DS

R

L

DUT

R

G

V

GS

IG = const.

FDD770N15A — N-Channel PowerTrench

®

MOSFET

Figure 14. Gate Charge Test Circuit & Waveform

V

GS

Figure 15. Resistive Switching Test Circuit & Waveforms

V

GS

Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms

©2012 Fairchild Semiconductor Corporation
FDD770N15A Rev. 1.2

www.fairchildsemi.com

6

DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

•ISDcontrolled by pulse period

V

DD

L

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width

Gate Pulse Period

--------------------------

DUT

V

DS

+

_

Driver

R

G

Same Type

as DUT

V

GS

• dv/dt controlled by R

G

•ISDcontrolled by pulse period

V

DD

LL

I

SD

10V

V

GS

( Driver )

I

SD

( DUT )

V

DS

( DUT )

V

DD

Body Diode

Forward Voltage Drop

V

SD

IFM, Body Diode Forward Current

Body Diode Reverse Current

I

RM

Body Diode Recovery dv/dt

di/dt

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

D =

Gate Pulse Width
Gate Pulse Period

--------------------------

FDD770N15A — N-Channel PowerTrench

®

MOSFET

Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms

©2012 Fairchild Semiconductor Corporation
FDD770N15A Rev. 1.2

7

www.fairchildsemi.com

FDD770N15A — N-Channel PowerTrench

V

GS

(DUT)

V

GS

(Driver)

Driver

R

G

V

CC

DUT

V

R

V

DD

()

1

G

R

G

R

=⋅

∫

G

10V

t

t

V

GS

®

MOSFET

Qsync V t dt

Figure 18. Total Gate Charge Qsync. Test Circuit & Waveforms

©2012 Fairchild Semiconductor Corporation
FDD770N15A Rev. 1.2

8

www.fairchildsemi.com

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