Datasheet FDB8443 Datasheet (Fairchild)

tm

FDB8443

N-Channel PowerTrench® MOSFET

40V, 182A, 3.0mΩ

Features

 Typ r

 Typ Q

 Low Miller Charge

 Low Qrr Body Diode

 UIS Capability (Single Pulse and Repetitive Pulse)

 RoHS Compliant

= 2.3mΩ at V

DS(on)

= 142nC at VGS = 10V

g(10)

E

E

R

F

I

D

A

E

L

M

P

L

E

M

T

I

O

N

= 10V, ID = 80A

GS

E

N

T

A

June 2011

Applications

 Power Tools

 Automotive Engine Control

 Powertrain Management

 Solenoid and Motor Drivers

 Electronic Steering

 Integrated Starter / Alternator

 Distributed Power Architecture and VRMs

 Primary Switch for 12V Systems

FDB8443 N-Channel PowerTrench

®

MOSFET

©2011 Fairchild Semiconductor Corporation
FDB8443 Rev. A2

www.fairchildsemi.com1

FDB8443 N-Channel PowerTrench

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

I

DM

E

AS

P

D

T

J

Drain to Source Voltage 40 V

Gate to Source Voltage ±20 V

= 25oC, Silicon Limited) 182*

C

= 100oC, Silicon Limited) 129*

C

= 25oC, Package Limited) 120

C

= 25oC, R

A

= 43oC/W) 25

θJA

Drain Current

- Continuous (T

- Continuous (T

- Continuous (T

- Continuous (T

D ra i n C u rr e n t - P u ls e d S ee Fi g u re 4

Single Pulse Avalanche Energy (Note 1) 531 mJ

Power Dissipation 188 W

o

Derate above 25

, T

Operating and Storage Temperature -55 to +175

STG

C1.25W/

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case 0.8

Thermal Resistance Junction to Ambient (Note 2) 62

Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 43

o

o

o

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDB8443 FDB8443 TO-263AB 330mm 24mm 800 units

A

o

o

C

C/W

C/W

C/W

C

®

MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 40 - - V

V

= 32V, - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC - - 250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(th)

r

DS(on)

Gate to Source Threshold Voltage VGS = VDS, ID = 250μA22.84V

= 80A, VGS= 10V - 2.3 3.0

I

Drain to Source On Resistance

D

I

= 80A, VGS= 10V,

D

T

= 175oC

J

-4.25.5

Dynamic Characteristics

C

iss

C

oss

C

rss

R

G

Q

Q

Q

Q

Q

g(TOT)

g(TH)

gs

gs2

gd

Input Capacitance

Output Capacitance - 800 - pF

Reverse Transfer Capacitance - 510 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Gate Resistance VGS = 0.5V, f = 1MHz - 0.9 - Ω

Total Gate Charge at 10V VGS = 0 to 10V

Threshold Gate Charge VGS = 0 to 2V - 17.5 23 nC

Gate to Source Gate Charge

Gate Charge Threshold to Plateau - 18.8 - nC

V

= 20V

DD

I

= 35A

D

I

= 1mA

g

Gate to Drain “Miller“ Charge - 32 - nC

- 9310 - pF

- 142 185 nC

-36-nC

μA

mΩ

FDB8443 Rev. A2 www.fairchildsemi.com2

FDB8443 N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min Typ Max Units

Switching Characteristics (V

t

on

t

d(on)

t

r

t

d(off)

t

f

t

off

Turn-On Time

Turn-On Delay Time - 18.4 - ns

Rise Time - 17.9 - ns

Turn-Off Delay Tim e - 55 - ns

Fall Time - 13.5 - ns

Turn-Off Time - - 109 ns

= 10V)

GS

= 20V, ID = 35A

V

DD

V

= 10V, RGS = 2Ω

GS

- - 58 ns

Drain-Source Diode Characteristics

I

= 35A - 0.8 1.25

V

SD

t

rr

Q

rr

Notes:

1: Starting TJ = 25oC, L = 0.26mH, IAS = 64A.
2: Pulse width = 100s.

Source to Drain Diode Voltage

Reverse Recovery Time

Reverse Recovery Charge - 48 62 nC

SD

= 15A - 0.8 1.0

I

SD

= 35A, dISD/dt = 100A/μs

I

SD

-4255ns

V

®

MOSFET

FDB8443 Rev. A2 www.fairchildsemi.com3

Typical Characteristics

0 25 50 75 100 125 150 175

0.0

0.2

0.4

0.6

0.8

1.0

1.2

POWER DISSIPATION MULIPLIER

TC, CASE TEMPERATURE(oC)

25 50 75 100 125 150 175

0

50

100

150

200

TC, CASE TEMPERATURE(oC)

I

D

, DRAIN CURRENT (A)

VGS = 10V

CURRENT LIMITED
BY PACKAGE

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

1E-3

0.01

0.1

1

SINGLE PULSE

D = 0.50

0.20

0.10

0.05

0.02

0.01

NORMALIZED THERMAL

IMPEDANCE, Z

θJC

t, RECTANGULAR PULSE DURATION(s)

DUTY CYCLE - DESCENDING ORDER

2

NOTES:
DUTY FACTOR: D = t1/t

2

PEAK TJ = PDM x Z

θJC

x R

θJC

+ T

C

P

DM

t

1

t

2

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

100

1000

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

VGS = 10V

SINGLE PULSE

I

DM

, PEAK CURRENT (A)

t, RECTANGULAR PULSE DURATION(s)

5000

10

-5

10

-4

10

-3

10

-2

10

-1

110

10

100

1000

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

VGS = 10V

SINGLE PULSE

I

DM

, PEAK CURRENT (A)

t, RECTANGULAR PULSE DURATION(s)

5000

TC = 25oC

I = I

2

175 - T

C

150

FOR TEMPERATURES

ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

FDB8443 N-Channel PowerTrench

®

MOSFET

Figure 1. Normalized Power Dissipation vs Case

Temperature

Figure 3.

Normalized Maximum Transient Thermal Impedance

Figure 2.

Maximum Continuous Drain Current vs

Case Temperature

FDB8443 Rev. A2 www.fairchildsemi.com4

Figure 4. Peak Current Capability

1 10 100

0.1

1

10

100

1000

LIMITED
BY PACKAGE

10us

100us

1ms

10ms

I

D

, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

DS(on)

SINGLE PULSE
T

J

= MAX RATED

T

C

= 25

o

C

DC

0.01 0.1 1 10 100 1000

1

10

100

5000

STARTING TJ = 150oC

STARTING TJ = 25oC

I

AS

, AVALANCHE CURRENT (A)

tAV, TI ME IN AVALANCHE (ms)

500

tAV = (L)(IAS)/(1.3*RATED BV

DSS

- VDD)

If R = 0

If R

≠

0

t

AV

= (L/R)ln[(IAS*R)/(1.3*RATED BV

DSS

- VDD) +1]

2.02.53.03.54.04.55.0

0

40

80

120

160

TJ = -55oC

TJ = 25oC

TJ = 175oC

PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX

V

DD

= 5V

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

012345

0

40

80

120

160

200

VGS = 5V

I

D

, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

V

GS

= 4V

VGS = 4.5V

V

GS

= 10V

PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX

345678910

0

20

40

60

80

r

DS(on)

, DRAIN TO SOURCE

ON-RESISTANCE (mΩ)

V

GS

, GATE TO SOURCE VOLTAGE (V)

I

D

= 80A

TJ = 25oC

TJ = 175oC

PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX

-80 -40 0 40 80 120 160 200

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX

ID = 80A

V

GS

= 10V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

TJ, JUNCTION TEMPERATURE(oC)

Typical Characteristics

FDB8443 N-Channel PowerTrench

Figure 5.

Figure 7.

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Forward Bias Safe Operating Area

Figure 6. Unclamped Inductive Switching

Transfer Characteristics Figure 8.

Capability

Saturation Characteristics

®

MOSFET

FDB8443 Rev. A2 www.fairchildsemi.com5

Figure 9.

Variation vs Gate to Source

Drain to Source On-Resistance

Voltage

Figure 10.

Normalized Drain to Source On

Resistance vs Junction Temperature

-80 -40 0 40 80 120 160 200

0.4

0.6

0.8

1.0

1.2

V

GS

= V

DS

I

D

= 250μA

NORMALIZED GATE

THRESHOLD VOLTAGE

TJ, JUNCTION TEMPERATURE(oC)

-80 -40 0 40 80 120 160 200

0.90

0.95

1.00

1.05

1.10

1.15

I

D

= 250μA

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAGE

TJ, JUNCTION TEMPERATURE (oC)

0.1 1 10

100

1000

10000

20000

f = 1MHz
V

GS

= 0V

C

rss

C

oss

C

iss

VDS, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

50

0 20 40 60 80 100 120 140 160

0

2

4

6

8

10

ID = 35A

VDD = 25V

VDD = 20V

V

GS

, GATE TO SOURCE VOLTAGE(V)

Q

g

, GATE CHARGE(nC)

VDD = 15V

Typical Characteristics

Figure 11.

Normalized Gate Threshold Voltage vs

Junction Temperature

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

FDB8443 N-Channel PowerTrench

®

MOSFET

Figure 13.

Capacitance vs Drain to Source

FDB8443 Rev. A2 www.fairchildsemi.com6

Voltage

Figure 14.

Gate Charge vs Gate to Source Voltage

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®

tm

tm

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.

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Power-SPM™
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Saving our world, 1mW/W/kW at a time™
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μSerDes™

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UHC
Ultra FRFET™
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VCX™
VisualMax™
XS™

®

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®

*

FDB8443 N-Channel PowerTrench

®

MOSFET

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.

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Definition of Terms

.

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
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Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDB8443 Rev. A2

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

Rev. I54

7

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