Datasheet FDP7030L, FDB7030L Datasheet (Fairchild Semiconductor)

FDP7030L / FDB7030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Features

April 1998

These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as DC/DC converters and high efficiency
switching circuits where fast switching, low in-line power
loss, and resistance to transients are needed.

100 A, 30 V. R
R

Critical DC electrical parameters specified at elevated
temperature.

Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.

High density cell design for extremely low R

= 0.007 Ω @ VGS=10 V

DS(ON)

= 0.010 Ω @ VGS=5 V.

DS(ON)

.

DS(ON)

175°C maximum junction temperature rating.

_________________________________________________________________________________

D

G

S

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter FDP7030L FDB7030L Units

V

DSS

V

GSS

I

D

Drain-Source Voltage 30 V
Gate-Source Voltage - Continuous ±20 V
Drain Current - Continuous (Note 1) 100 A
75

- Pulsed (Note 1) 300

P

D

Total Power Dissipation @ TC = 25°C 125 W

Derate above 25°C 0.83 W/°C
TJ,T
T

L

Operating and Storage Temperature Range -65 to 175 °C

STG

Maximum lead temperature for soldering purposes,

275 °C

1/8" from case for 5 seconds

THERMAL CHARACTERISTICS

R

JC

θ

R

JA

θ

© 1998 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Case 1.2 °C/W

Thermal Resistance, Junction-to-Ambient 62.5 °C/W

FDP7030L Rev.D1

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Min Typ Max Unit
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

W

DSS

I

AR

Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 38 A 200 mJ
Maximum Drain-Source Avalanche Current 38 A

OFF CHARACTERISTICS

BV

∆BV

I

DSS

DSS

DSS

Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient

/∆T

J

Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25 oC
VDS = 24 V, V

GS

= 0 V

30 V

36

mV/oC

10 µA

TJ =125 °C 1 mA

I

GSSF

I

GSSR

Gate - Body Leakage, Forward

VGS = 20 V, VDS = 0 V

Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA

100 nA

ON CHARACTERISTICS (Note 2)

V

∆V

R

GS(th)

GS(th)

DS(ON)

Gate Threshold Voltage
Gate Threshold Voltage Temp.Coefficient ID = 250 µA, Referenced to 25 oC -5 mV/oC

/∆T

J

VDS = VGS, ID = 250 µA

Static Drain-Source On-Resistance VGS = 10 V, ID = 50 A 0.006 0.007

1 1.5 2 V

Ω

TJ = 125°C 0.009 0.011

0.009 0.01

50 S

I
g

D(on)

VGS = 5 V, ID = 40 A

On-State Drain Current VGS = 10 V, VDS = 10 V 60 A

FS

Forward Transconductance

VDS = 10 V, ID = 50 A

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = 15 V, VGS = 0 V,
Output Capacitance 1290 pF

f = 1.0 MHz

Reverse Transfer Capacitance 420 pF

2150 pF

SWITCHING CHARACTERISTICS (Note 2)

t
t

t
t

Q
Q
Q

D(on)

r

D(off)

f

Turn - On Delay Time
Turn - On Rise Time 160 225 nS

Turn - Off Delay Time 70 95 nS

VDD = 15 V, ID = 75 A,
VGS = 10 V, R
R

= 10 Ω

GS

GEN

= 6 Ω

Turn - Off Fall Time 140 195 nS

g

gs

gd

Total Gate Charge V
Gate-Source Charge 12 nC
Gate-Drain Charge 18 nC

= 12 V

DS

ID = 50 A, VGS= 4.5 V

10 20 nS

35 50 nC

DRAIN-SOURCE DIODE CHARACTERISTICS

I

S

ISM
V

SD

Notes

1. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A.

2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

Maximum Continuos Drain-Source Diode Forward Current (Note 1) 100 A
Maximum Pulsed Drain-Source Diode Forward Current (Note 2) 300 A
Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 50 A (Note 2)

TJ = 125°C

1 1.3 V

0.85 1.1

FDP7030L Rev.D1

Typical Electrical Characteristics

100

V = 10V

GS

8.0

80

6.0

60

40

20

D

I , DRAIN-SOURCE CURRENT (A)

0

0 0.5 1 1.5 2 2.5

5.0

4.5

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1. On-Region Characteristics.

1.6

I = 50A

D

V = 10V

GS

1.4

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)

J

4.0

3.5

3.0

3

V =3.5V

2.5

2

GS

4.0

4.5

1.5

DS(ON)

1

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.5
0 20 40 60 80 100

I , DRAIN CURRENT (A)

D

5.0

6.0

Figure 2. On-Resistance Variation with

Drain Current and Gate
Voltage.

0.025

0.02

0.015

125°C

0.01

0.005

DS(ON)

R , ON-RESISTANCE (OHM)

0

2 4 6 8 10

25°C

V , GATE TO SOURCE VOLTAGE (V)

GS

8.0

10.0

I =50A

D

Figure 3. On-Resistance Variation

with Temperature.

60

V = 10V

DS

50

40

30

20

D

I , DRAIN CURRENT (A)

10

0

1 1.5 2 2.5 3 3.5 4 4.5 5

T = -55°C

A

25

125°C

V , GATE TO SOURCE VOLTAGE (V)

GS

Figure 5. Transfer Characteristics.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

60

V =0V

GS

10

T = 125°C

1

0.1

0.01

0.001

S

I , REVERSE DRAIN CURRENT (A)

0.0001

0 0.2 0.4 0.6 0.8 1 1.2 1.4

A

25°C

-55°C

V , BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDP7030L Rev.D1

Typical Electrical Characteristics (continued)

10

I = 50A

D

8

6

4

2

GS

V , GATE-SOURCE VOLTAGE (V)

0

0 20 40 60 80

Q , GATE CHARGE (nC)

g

V = 6.0V

DS

12V

24V

Figure 7. Gate Charge Characteristics.

500
300

100

50

20
10

D

I , DRAIN CURRENT (A)

DS(ON)

R Limit

V = 10V

GS

SINGLE PULSE

5

2
1

0.1 0.5 1 5 10 30 50

o

R = 1.2 C/W

JC

θ

T = 25 °C

C

V , DRAIN-SOURCE VOLTAGE (V))

DS

100ms

DC

100µs

1ms

10ms

10µs

5000

3000

C
C

iss

oss

2000

1000

500

CAPACITANCE (pF)

C

rss
f = 1 MHz
V = 0V

GS

200

1 2 5 10 20 30

V , DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 8. Capacitance Characteristics.

8000

SINGLE PULSE
R =1.2° C/W

JC

6000

4000

POWER (W)

2000

0

0.01 0.1 1 10 100 1000
SINGLE PULSE TIME (ms)

θ

T = 25°C

C

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power

Dissipation.

1

0.5

0.3

0.2

0.1

0.05

0.03

0.02

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.01

0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000

D = 0.5

0.2

0.1

0.05

0.02

0.01

Single Pulse

t ,TIME (ms)

1

R (t) = r(t) * R

JC

θ

R = 1.2 °C/W

JC

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

C

Duty Cycle, D = t /t

Figure 11. Transient Thermal Response Curve.

JC

θ

JC

θ

1 2

FDP7030L Rev.D1