Page 1
April 1998
FDP6035L/FDB6035L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited
for low voltage applications such as DC/DC converters and
high efficiency switching circuits where fast switching, low
58 A, 30 V. R
R
Low gate charge (typical 34 nC).
Low Crss (typical 175 pF).
Fast switching speed.
in-line power loss, and resistance to transients are needed.
________________________________________________________________________________
= 0.011 Ω @ VGS=10 V
DS(ON)
= 0.019 Ω @ VGS=4.5 V.
DS(ON)
D
G
S
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter FDP6035L FDB6035L Units
V
DSS
V
GSS
I
D
Drain-Source Voltage 30 V
Gate-Source Voltage ±20 V
Drain Current - Continuous 58 A
- Pulsed 175
P
D
Maximum Power Dissipation @ TC = 25°C
75 W
Derate above 25°C 0.5 W/°C
TJ,T
Operating and Storage Temperature Range -65 to 175 °C
STG
THERMAL CHARACTERISTICS
R
JC
θ
R
θJA
Thermal Resistance, Junction-to-Case 2 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 °C/W
© 1998 Fairchild Semiconductor Corporation
FDP6035L Rev.B
Page 2
Electrical Characteristics T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Unit
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W
DSS
I
AR
Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 21 A 150 mJ
Maximum Drain-Source Avalanche Current 21 A
OFF CHARACTERISTICS
BV
∆BV
I
DSS
I
GSSF
I
GSSR
DSS
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
Breakdown Voltage Temp. Coefficient
/∆T
J
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25 oC
VDS = 24 V, V
GS
= 0 V
37
10 µA
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
mV/oC
-100 nA
ON CHARACTERISTICS (Note 1)
V
∆V
R
GS(th)
GS(th)
DS(ON)
Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.6 3 V
Gate Threshold Voltage Temp.Coefficient
/∆T
J
Static Drain-Source On-Resistance
ID = 250 µA, Referenced to 25 oC
VGS = 10 V, ID = 26 A
TJ =125 °C
-4
0.0095 0.011
0.014 0.019
mV/oC
Ω
VGS = 4.5 V, ID = 21 A 0.015 0.019
I
I
g
D(on)
D(on)
FS
On-State Drain Current
VGS = 10 V, VDS = 10 V
On-State Drain Current VGS = 4.5 V, VDS = 10 V 15 A
Forward Transconductance
VDS = 10 V, ID = 26 A
60 A
37 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = 15 V, VGS = 0 V,
Output Capacitance 640 pF
f = 1.0 MHz
Reverse Transfer Capacitance 175 pF
1230 pF
SWITCHING CHARACTERISTICS (Note 1)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 15 V, ID = 58 A 7.6 15 nS
Turn - On Rise Time
VGS = 10 V, R
GEN
= 24 Ω
150 210 nS
Turn - Off Delay Time 29 46 nS
Turn - Off Fall Time 17 27 nS
Total Gate Charge VDS= 12 V
Gate-Source Charge 6 nC
ID = 58 A, VGS= 10 V
34 46 nC
Gate-Drain Charge 8 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
V
SD
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Maximum Continuous Drain-Source Diode Forward Current 58 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 26 A (Note 1) 0.91 1.3 V
TJ = 125°C
0.8 1.2
FDP6035L Rev.B
Page 3
Typical Electrical Characteristics
100
V = 10V
GS
7.0
80
6.0
60
40
20
D
I , DRAIN-SOURCE CURRENT (A)
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
5.5
5.0
4.5
4.0
3.5
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
1.8
I = 26A
D
V = 10V
1.6
GS
1.4
1.2
1
DS(ON)
R ,NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
3.0
3
V =3.5V
GS
2.5
2
4.0
4.5
1.5
1
DS(ON)
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.5
0 20 40 60 80 100
5.0
5.5
6.0
I , DRAIN CURRENT (A)
D
7.0
Figure 2. On-Resistance Variation with
Drain Current and Gate
0.05
0.04
0.03
0.02
0.01
DS(ON)
R , ON-RESISTANCE (OHM)
0
2 4 6 8 10
V , GATE TO SOURCE VOLTAGE (V)
GS
T = 125°C
A
25°C
10
I = 26A
D
Figure 3. On-Resistance Variation
with Temperature.
60
V = 10V
DS
50
40
30
20
D
I , DRAIN CURRENT (A)
10
0
1 2 3 4 5
V , GATE TO SOURCE VOLTAGE (V)
GS
T = 125°C
A 25°C
-55°C
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
60
V =0V
GS
10
T = 125°C
1
0.1
0.01
0.001
S
I , REVERSE DRAIN CURRENT (A)
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
A
25°C
-55°C
V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDP6035L Rev.B
Page 4
Typical Electrical Characteristics (continued)
10
I = 26A
D
8
V = 6.0V
DS
12V
24V
6
4
2
GS
V , GATE-SOURCE VOLTAGE (V)
0
0 10 20 30 40
Q , GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics.
300
200
100
DS(ON)
R Limit
50
20
10
V = 10V
GS
5
SINGLE PULSE
D
I , DRAIN CURRENT (A)
2
1
0.5
0.5 1 3 5 10 20 30 50
o
R = 2 C/W
JC
θ
T = 25 °C
C
V , DRAIN-SOURCE VOLTAGE (V))
DS
DC
10µs
100µs
1ms
10ms
100ms
4000
2000
800
300
CAPACITANCE (pF)
f = 1 MHz
V = 0V
100
GS
0.1 0.3 1 3 10 30
V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 8. Capacitance Characteristics.
3000
2500
2000
1500
POWER (W)
1000
500
0
0.01 0.1 1 10 100 1,000
SINGLE PULSE TIME (SEC)
SINGLE PULSE
R = 2 °C/W
JC
θ
T = 25°C
C
C
C
C
iss
oss
rss
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.01
0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
t ,TIME (ms)
1
R (t) = r(t) * R
JC
θ
R = 2.0 °C/W
JC
θ
P(pk)
t
1
t
2
T - T = P * R (t)
J
C
Duty Cycle, D = t /t
JC
θ
1 2
Figure 11. Transient Thermal Response Curve.
JC
θ
FDP6035L Rev.B
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