Datasheet FDB6021P Datasheet (Fairchild Semiconductor)

FDP6021P/FDB6021P

20V P-Channel 1.8V Specified PowerTrench



MOSFET

FDP6021P/FDB6021P

April 2001

PRELIMINARY

General Description

This P-Channel power MOSFET uses Fairchild’s low
voltage PowerTrench process. It has been optimized for
power management applications .

Features

• –28 A, –20 V. R
R
R

= 30 mΩ @ VGS = 4.5 V

DS(ON)

= 40 mΩ @ VGS = 2.5 V

DS(ON)

= 65 mΩ @ VGS = 1.8 V

DS(ON)

Applications

• Battery management

• Load switch

• Voltage regulator

.

• Critical DC electric al parameters specified at
elevated temperature

• High performance trench te chnology for extremely
low R

• 175°C maximum junct i on temperature rating

D

DS(ON)

S

G

G

G

D

S

TO-220

FDP Series

Absolute Maximum Ratings T

S

o

=25

C unless otherwise noted

A

TO-263AB

FDB Series

D

Symbol Parameter Ratings Units

V

Drain-Source Voltage –20 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1) –28 A
– Pulsed (Note 1) –80

PD

TJ, T

STG

Total Power Dissipation @ T
Derate above 25°C

Operating and Storage Junction Temperature Range –65 to +175

= 25°C

C

± 8

37 W

0.25

V

W°C

°C

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient

4

62.5

°C/W
°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDP6021P FDP6021P Tube n/a 45
FDB6021P FDB6021P 13” 24mm 800 units

2001 Fairchild Semiconductor Corporation

FDP6021P/FDB6021P Rev B ( W)

FDP6021P/FDB6021P

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1

DSS

I

GSSF

I

GSSR

Breakdown Voltage Temperature
Coefficient

J

Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA

V

= 0 V, ID = –250 µA

GS

= –250 µA,Referenced to 25°C

I

D

–20 V

–16

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–S t ate Drain Current VGS = –4.5 V, VDS = –5 V –40 A

D(on)

V

= VGS, ID = –250 µA

DS

= –250 µA,Referenced to 25°C

I

D

VGS = –4.5 V, ID = –14 A

= –2.5 V, ID = –12 A

V

GS

V

= –1.8 V, ID = –10 A

GS

= –4.5V, ID = –14 A, TJ=125°C

V

GS

–0.4 –0.7 –1.5 V

3

24
31
50
30

30
40
65
42

mV/°C

mΩ

gFS Forward Transconductance VDS = –5 V, ID = –14 A 33 S

Dynamic Characteristics

C

Input Capacitance 1890 pF

iss

C

Output Capacitance 302 pF

oss

C

Reverse Transfer Capacitance

rss

= –10 V, V

V

DS

f = 1.0 MHz

= 0 V,

GS

124 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 13 23 ns

d(on)

tr Turn–On Rise Time 10 20 ns
t

Turn–Off Delay Time 80 128 ns

d(off)

tf Turn–Off Fall Time
Qg Total Gate Charge 20 28 nC
Qgs Gate–Source Charge 4 nC
Qgd Gate–Drain Charge

= –10 V, ID = –1 A,

V

DD

= –4.5 V, R

V

GS

= –10 V, ID = –14 A,

V

DS

V

= –4.5 V

GS

GEN

= 6 Ω

50 80 ns

7 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current –28 A
VSD Drain–Source Diode Forward

Voltage

Notes:

1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

2. TO-220 package is supplied in tube / rail @ 45 pieces per rail.

3. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A

VGS = 0 V, IS = –14 A –0.9 –1.3 V

FDP6021P/FDB6021P Rev . B(W)

Typical Characteristics

40

VGS = -4.5V

-3.5V

30

20

, DRAIN CURRENT (A)

D

10

-I

0

012345

-3.0V

-2.5V

-2.0V

, DRAIN-SOURCE VOLTAGE (V)

-V

DS

-1.8V

-1.5V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

2.4

2.2

VGS = -1.8V

2

1.8

1.6

, NORMALIZED

1.4

DS(ON)

R

1.2

1

DRAIN-SOURCE ON-RESISTANCE

0.8

0 10203040

-2.0V

-2.5V

-I

-3.0V

, DRAIN CURRENT (A)

D

Drain Current and Gate Voltage.

-3.5V

FDP6021P/FDB6021P

-4.5V

1.5

ID = -14A

1.4

= -4.5V

V

GS

1.3

1.2

1.1

, NORMALIZED

1

DS(ON)

R

0.9

0.8

DRAIN-SOURCE ON-RESISTANCE

0.7

-50 -25 0 25 50 75 100 125 150 175

, JUNCTION TEMPERATURE (oC)

T

J

Figure 3. On-Resistance Variation

withTemperature.

30

VDS = -5V

25

20

15

10

, DRAIN CURRENT (A)

D

-I

5

0

0.511.522.5

-V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC

25oC

125oC

0.09

ID = -7A

0.07

0.05

, ON-RESISTANCE (OHM)

0.03

DS(ON)

R

0.01
12345

TA = 25oC

-V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = 125oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

-55oC

-V

, BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDP6021P/FDB6021P Rev . B(W)

Typical Characteristics

FDP6021P/FDB6021P

5

ID =-14A

4

3

2

1

, GATE-SOURCE VOLTAGE (V)

GS

-V

0

0 5 10 15 20 25

Q

, GATE CHARGE (nC)

g

VDS = -5V

-15V

-10V

3000

2500

2000

1500

1000

CAPACITANCE (pF)

500

0

C

OSS

C

RSS

0 5 10 15 20

-V

C

ISS

, DRAIN TO SOURCE VOL TAG E (V)

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

VGS = -4.5V

, DRAIN CURRENT (A)

D

SINGLE PULSE

-I

R

θ

JC

T

A

1

110100

1s

DC

= 4oC/W
= 25oC

, DRAIN-SOURCE VOLTAGE (V)

-V

DS

100µs

1ms

10ms

100ms

1000

800

600

400

200

P(pk), PEAK TRANSIENT POWER (W)

0

0.0001 0.001 0.01 0.1 1 10 100 1000

, TIME (sec)

t

1

SINGLE PULSE

R

θ

T

= 4°C/W

JC

= 25°C

A

f = 1MHz
V

= 0 V

GS

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.1

0.01

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

R

θJA

R

θ

P(pk)

T

- TA = P * R

J

Duty Cycle, D = t

0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 11. Transient Thermal Response Curve.

(t) = r(t) + R

JC

FDP6021P/FDB6021P Rev . B(W)

= 4 °C/W

t

1

t

2

θJA

(t)

θJA

/ t

1

2

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOL T™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™



FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™

OPTOPLANAR™
PACMAN™
POP™
PowerTrench



QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART ST ART™
Stealth™



SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET



VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H2