Datasheet FDA032N08 Datasheet (Fairchild)

tm

FDA032N08

N-Channel PowerTrench® MOSFET

75V, 235A, 3.2mΩ

FDA032N08 N-Channel PowerTrench

January 2009

Features

•R

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low

• High Power and Current Handling Capability

• RoHS Compliant

= 2.5mΩ ( Typ.)@ VGS = 10V, ID = 75A

DS(on)

R

DS(on)

GSD

TO-3PN

Description

This N-Channel MOSFET is produced using Fairchild Semicon­ductor’s adcanced PowerTrench process that has been espe­cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

Application

• DC to DC Convertors / Synchronous Rectification

®

MOSFET

D

G

S

MOSFET Maximum Ratings T

Symbol Parameter FDA032N08 Units

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
P

D

, T

T

J

STG

T

L

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

Drain to Source Voltage 75 V
Gate to Source Voltage ±20 V

D r a i n C urrent

Drain Current - Pulsed (Note 1) 940 A
Single Pulsed Avalanche Energy (Note 2) 1995 mJ

Power Dissipation
Operating and Storage Temperature Range -55 to +175

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

= 25oC unless otherwise noted*

C

-Continuous (T

-Continuous (T

(T

= 25oC) 375 W

C

- Derate above 25

= 25oC, Silicon Limited) 235*

C

= 100oC, Silicon Limited) 165*

C

= 25oC, Package Limited) 120

C

o

C2.5W/

300

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC
θCS

R

θJA

©2009 Fairchild Semiconductor Corporation
FDA032N08 Rev. A

Thermal Resistance, Junction to Case 0.4
Thermal Resistance, Case to Sink Typ. 0.24
Thermal Resistance, Junction to Ambient 40

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A-Continuous (T

o

C

o

C

o

C

o

C/WR

FDA032N08 N-Channel PowerTrench

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDA032N08

FDA032N08 TO-3PN - - 30

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

ΔBV

DSS

ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC75 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V

I

= 250μA, Referenced to 25oC - 0.05 - V/oC

D

V

= 75V, V

DS

= 75V, TC = 150oC - - 500

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250μA2.53.54.5V
Static Drain to Source On Resistance VGS = 10V, ID = 75A - 2.5 3.2 mΩ
Forward Transconductance VDS = 20V , ID = 75A (Note 4) - 180 - S

Input Capacitance
Output Capacitance - 1360 1810 pF
Reverse Transfer Capacitance - 595 800 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

V

= 60V, ID = 75A

Gate to Source Gate Charge - 60 - nC
Gate to Drain “Miller” Charge - 47 - nC

DS

V

= 10V

GS

(Note 4, 5)

- 11400 15160 pF

- 169 220 nC

μA

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 191 392 ns
Turn-Off Delay Time - 335 680 ns
Turn-Off Fall Time - 121 252 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.71mH, IAS = 75A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 235 A
Maximum Pulsed Drain to Source Diode Forward Current - - 940 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 77 - nC

, Starting TJ = 25°C

DSS

= 37.5V, ID = 75A

V

DD

R

= 25Ω, VGS = 10V

GEN

(Note 4, 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs (Note 4)

F

= 75A - - 1.3 V

SD

= 75A

SD

- 230 470 ns

-53-ns

FDA032N08 Rev. A

2

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

3000

V

= 15.0 V

GS

10.0 V

1000

8.0 V

7.0 V

6.5 V

6.0 V

100

5.5 V

5.0 V

10

,Drain Current[A]

D

I

1

0.1

0.01 0.1 1

*Notes:

1. 250

2. T

μs Pulse Test

= 25oC

C

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.0030

500

100

175oC

10

,Drain Current[A]

D

I

1

2468

-55oC

25oC

*Notes:

1. V

2. 250

= 20V

DS

μs Pulse Test

VGS,Gate-Source Voltage[V]

400

FDA032N08 N-Channel PowerTrench

®

MOSFET

100

VGS = 10V

175oC

[Ω],

0.0025

DS(ON)

R

VGS = 20V

Drain-Source On-Resistance

0.0020
0 100 200 300 400

*Note: TC = 25oC

ID, Drain Current [A]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

100000

C

iss

C

= Cgs + Cgd (Cds = shorted

iss

C

= Cds + C

oss

C

rss

= C

gd

gd

10

, Reverse Drain Current [A]

S

I

1

0.0 0.5 1.0 1.5

VSD, Body Diode Forward Voltage [V]

)

10

VDS = 15V

= 37.5V

V

8

DS

= 60V

V

DS

25oC

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

10000

*Note:

= 0V

1. V

GS

2. f = 1MHz

1000

C

oss

C

rss

Capacitances [pF]

, Gate-Source Voltage [V]

GS

V

6

4

2

100

FDA032N08 Rev. A

0.1 1 10
VDS, Drain-Source Voltage [V]

80

0

0 50 100 150 200

*Note: ID = 75A

Qg, Total G a te C harge [n C]

3

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs.
vs. Temperature

1.2

1.1

Temperature

3.0

2.5

2.0

FDA032N08 N-Channel PowerTrench

1.0

, [Normalized]

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-100 -50 0 50 100 150 200

*Notes:

1. V

2. I

TJ, Junction Temperature [oC]

= 0V

GS

= 10mA

D

1.5

, [Normalized]

1.0

DS(on)

R

Drain-Source On-Resistance

0.5

0.0

-100 -50 0 50 100 150 200

*Notes:

1. V

2. I

TJ, Junction Temperature [oC]

GS

= 75A

D

= 10V

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature

3000
1000

100

Operation in This Area

10

is Limited by R

1

, Drain Current [A]

D

I

0.1

0.01
1 10 100

DS(on)

*Notes:

= 25oC

1. T

C

2. T

= 175oC

J

3. Single Pulse

VDS, Drain-Source Voltage [V]

10μs

100μs
1ms

10ms

DC

250

200

150

100

, Drain Current [A]

D

I

Limited by package

50

0

25 50 75 100 125 150 175

TC, Case Temperature

o

[

C

]

Figure 11. Transient Thermal Response Curve

®

MOSFET

FDA032N08 Rev. A

]

JC

θ

Z

[

Thermal Response

0.5

0.1

0.01

0.005

0.5

0.2

0.1

0.05

0.02

0.01
Single pulse

-5

10

P

DM

t

1

t

2

*Notes:

1. Z

(t) = 0.4oC/W Max.

θ

JC

2. Duty Fact or, D= t

3. TJM - TC = PDM * Z

-4

10

-3

10

-2

10

-1

10

1/t2

θ

JC

0

10

Rectangular Pulse Duration [sec]

4

(t)

1

10

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Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

FDA032N08 N-Channel PowerTrench

®

MOSFET

FDA032N08 Rev. A

Unclamped Inductive Switching Test Circuit & Waveforms

5

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Peak Diode Recovery dv/dt Test Circuit & Waveforms

g

p

g

p

+

+

V

V

DS

DS

_

_

L

LL

Sam e Type

Sam e Type

as DU T

as DU T

• dv/dt controlled by R

• dv/dt controlled by R

•ISDcontrolled by pulse period

•ISDcontrolled by pulse period

G

G

V

V

GS

GS

R

R

Driver

Driver

G

G

DUT

DUT

I

I

SD

SD

V

V

DD

DD

FDA032N08 N-Channel PowerTrench

®

MOSFET

V

V

GS

GS

( D rive r )

( D rive r )

I

I

SD

SD

( D U T )

( D U T )

V

V

DS

DS

( DUT )

( DUT )

G ate Pulse W idth

G ate Pulse W idth

G ate Pulse W idth

--------------------------

--------------------------

--------------------------

D =

D =

D =

Gate Pulse Period

Gate Pulse Period

Gate Pulse Period

IFM, Body Diode Forw ard Current

IFM, Body Diode Forw ard Current

I

I

RM

RM

Body Diode Reverse Current

Body Diode Reverse Current

Body Diode R ecovery dv/dt

Body Diode R ecovery dv/dt

V

V

SD

SD

Body Diode

Body Diode

Forward Volta

Forward Volta

e Dro

e Dro

di/dt

di/dt

10V

10V

V

V

DD

DD

FDA032N08 Rev. A

6

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Mechanical Dimensions

FDA032N08 N-Channel PowerTrench

TO-3PN

®

MOSFET

FDA032N08 Rev. A

Dimensions in Millimeters

7

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FDA032N08 N-Channel PowerTrench

®

MOSFET

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Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I37

FDA032N08 Rev. A

8

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