
CPC5602C
N Channel Depletion Mode FET
Features
• Low on resistance 10 ohms
• High input impedance
• Low input and output leakage
• Small package size SOT-223
• PC Card (PCMCIA) Compatible
• PCB Space and Cost Savings
 Applications
• Support Component for LITELINK 
Data Access Arrangement (DAA)
• Normally-on switch
• Telecom
• Constant Current Source
TM
Description
The CPC5602C is an “N” channel depletion mode Field 
Effect Transistor (FET) that utilizes Clare’s proprietary 
third generation vertical DMOS process. The third 
generation process realizes world class, high voltage 
MOSFET performance in an economical silicon gate 
process. The vertical DMOS process yields a highly 
reliable device particularly in difficult application 
environments such as telecommunications.
One of the primary applications for the CPC5602C is as 
a linear regulator/ hook switch for the LITELINK
TM 
Data 
Access Arrangements (DAA) Devices (CPC5610A, 
CPC5611A, CPC5604A).
The CPC5602C has a typical on-resistance of 8Ω, a 
breakdown voltage exceeding 350V and is available in 
an SOT-223 package. As with all MOS devices, the FET 
structure prevents thermal runaway and thermal-induced 
secondary breakdown.
Absolute Maximum Ratings
Parameter Min Max Units
V
 Voltage — 350 V
DSS
Total Package Dissipation — 2.5 W
Operational Temperature -40 +85
Storage Temperature -40 +125
Soldering Temperature — +220
Absolute Maximum Ratings are stress ratings. Stresses in 
excess of these ratings can cause permanent damage to 
the device. Functional operation of the device at these or 
any other conditions beyond those indicated in the operational sections of this data sheet is not implied. Exposure 
of the device to the absolute maximum ratings for an extended period may degrade the device and effect its reliability.
O
C
O
C
O
C
Ordering Information
Part # Description
CPC5602C N-Channel Depletion Mode FET,
SOT-223 Package
CPC5602CTR N-Channel Depletion Mode, SOT-
223 Package 
FET-TAPE and Reel (1000 units min)
DS-CPC5602C-Rev. 1
www.clare.com
1
 

CPC5602C
Electrical characteristics (@0 to 85
o
C unless otherwise specified)
PARAMETERS SYMBOL MIN TYP MAX UNITS CONDITIONS
Breakdown Voltage V 
Gate-to-Source Off Voltage V 
Drain Current 1 I 
Drain Current 2 I 
Continuous Drain Current 1 I 
Continuous Drain Current 2 I 
On Resistance R 
Gate Leakage Current I 
Gate Capacitance C 
Thermal Resistance O
(BR)DSS
GS1
D1
D2
DC1
DC2
DS
GSS
ISS
JC
350 - -- V VGS=-5v, ID<100µA
-3.6 -2 V ID=2uA, 10V<VDS<100V
-- 5 mA VGS=-2.7V, 5V<VDS<50V 
130 - - mA VGS=-0.57V, 5V<VDS<50V 
125 - - mA VDS=7V
60 - - mA VDS=40V
-8 10 Ω VGS=-0.35V,0 .1V<VDS<0.2V
-- .1 µA -10V<VGS<10V
- - 300 pF    VDS= VGS=0V
-- 14oC/W
Package Pinout
D
4
1  2  3
G  D  S
Pin # Name
1GATE 
2 DRAIN 
3 SOURCE 
4 DRAIN
www.clare.com2
Rev. 1
 

Mechanical Dimensions
CPC5602C
6.50
(0.256)
3.00
(0.118)
2.30
(0.090)
3.51
(0.138)
0.71
(0.028)
1.68
(0.066)
  10
2.00 MAX
(0.078) MAX
7.01
(0.276)
.965
(0.038)
A
0.100 MAX
(0.004) MAX
Coplaner to  A  0.08/(0.003) 4 PL.
Note: Values are typical except where noted.
o
MAX
0.28
(0.011)
2.00
(0.079)
2.00
(0.079)
1.50
(0.059)
2.30
(0.091)
3.80
(0.15)
2.30
(0.091)
6.30
(0.248)
Rev. 1
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Dimensions
mm
(inches)
3
 

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CLARE LOCATIONS
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Tel: 1-978-524-6700 
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http://www.clare.com
Clare cannot assume responsibility for use of any circuitry other 
than circuitry entirely embodied in this Clare product. No circuit 
patent licenses nor indemnity are expressed or implied. Clare reserves the right to change the specification and circuitry, without 
notice at any time. The products described in this document are not 
intended for use in medical implantation or other direct life support 
applications where malfunction may result in direct physical harm, 
injury or death to a person.
Specification: DS-CPC5602C-Rev. 1 
©Copyright 2001, Clare, Inc. 
All rights reserved. Printed in USA. 
5/25/01