Datasheet CPC5602CTR, CPC5602C Datasheet (CPCLA)

CPC5602C

N Channel Depletion Mode FET

Features

• Low on resistance 10 ohms

• High input impedance

• Low input and output leakage

• Small package size SOT-223

• PC Card (PCMCIA) Compatible

• PCB Space and Cost Savings

Applications

• Support Component for LITELINK

Data Access Arrangement (DAA)

• Normally-on switch

• Telecom

• Constant Current Source

TM

Description

The CPC5602C is an “N” channel depletion mode Field
Effect Transistor (FET) that utilizes Clare’s proprietary
third generation vertical DMOS process. The third
generation process realizes world class, high voltage
MOSFET performance in an economical silicon gate
process. The vertical DMOS process yields a highly
reliable device particularly in difficult application
environments such as telecommunications.

One of the primary applications for the CPC5602C is as
a linear regulator/ hook switch for the LITELINK

TM

Data
Access Arrangements (DAA) Devices (CPC5610A,
CPC5611A, CPC5604A).

The CPC5602C has a typical on-resistance of 8Ω, a
breakdown voltage exceeding 350V and is available in
an SOT-223 package. As with all MOS devices, the FET
structure prevents thermal runaway and thermal-induced
secondary breakdown.

Absolute Maximum Ratings

Parameter Min Max Units

V

Voltage — 350 V

DSS

Total Package Dissipation — 2.5 W

Operational Temperature -40 +85

Storage Temperature -40 +125

Soldering Temperature — +220

Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at these or
any other conditions beyond those indicated in the opera­tional sections of this data sheet is not implied. Exposure
of the device to the absolute maximum ratings for an ex­tended period may degrade the device and effect its reli­ability.

O

C

O

C

O

C

Ordering Information

Part # Description

CPC5602C N-Channel Depletion Mode FET,

SOT-223 Package

CPC5602CTR N-Channel Depletion Mode, SOT-

223 Package
FET-TAPE and Reel (1000 units min)

DS-CPC5602C-Rev. 1

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1

CPC5602C

Electrical characteristics (@0 to 85

o

C unless otherwise specified)

PARAMETERS SYMBOL MIN TYP MAX UNITS CONDITIONS

Breakdown Voltage V
Gate-to-Source Off Voltage V
Drain Current 1 I
Drain Current 2 I
Continuous Drain Current 1 I
Continuous Drain Current 2 I
On Resistance R
Gate Leakage Current I
Gate Capacitance C
Thermal Resistance O

(BR)DSS

GS1

D1

D2

DC1

DC2

DS

GSS

ISS

JC

350 - -- V VGS=-5v, ID<100µA

-3.6 -2 V ID=2uA, 10V<VDS<100V

-- 5 mA VGS=-2.7V, 5V<VDS<50V
130 - - mA VGS=-0.57V, 5V<VDS<50V
125 - - mA VDS=7V

60 - - mA VDS=40V

-8 10 Ω VGS=-0.35V,0 .1V<VDS<0.2V

-- .1 µA -10V<VGS<10V

- - 300 pF VDS= VGS=0V

-- 14oC/W

Package Pinout

D

4

1 2 3

G D S

Pin # Name

1GATE
2 DRAIN
3 SOURCE
4 DRAIN

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Rev. 1

Mechanical Dimensions

CPC5602C

6.50

(0.256)

3.00

(0.118)

2.30

(0.090)

3.51

(0.138)

0.71

(0.028)

1.68

(0.066)

10

2.00 MAX

(0.078) MAX

7.01

(0.276)

.965

(0.038)

A

0.100 MAX

(0.004) MAX

Coplaner to A 0.08/(0.003) 4 PL.

Note: Values are typical except where noted.

o

MAX

0.28

(0.011)

2.00

(0.079)

2.00

(0.079)

1.50

(0.059)

2.30

(0.091)

3.80

(0.15)

2.30

(0.091)

6.30

(0.248)

Rev. 1

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Dimensions

mm

(inches)

3

Worldwide Sales Offices

CLARE LOCATIONS

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Tel: [phone]
Fax: [phone]
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http://www.clare.com

Clare cannot assume responsibility for use of any circuitry other
than circuitry entirely embodied in this Clare product. No circuit
patent licenses nor indemnity are expressed or implied. Clare re­serves the right to change the specification and circuitry, without
notice at any time. The products described in this document are not
intended for use in medical implantation or other direct life support
applications where malfunction may result in direct physical harm,
injury or death to a person.

Specification: DS-CPC5602C-Rev. 1
©Copyright 2001, Clare, Inc.
All rights reserved. Printed in USA.
5/25/01