Datasheet AV101-12 Datasheet (ALPHA)

Page 1
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com 1
Specifications subject to change without notice. 6/01A
HIP3™ Variable Attenuator
0.80–1.00 GHz
Features
+50 dBm IP3 Typical
Low Loss 1 dB Typical
Attenuation 30 dB Typical
Small SOIC-8 Package
AV101-12
Description
The AV101-12 is a current controlled variable attenuator from Alpha’s series of HIP3™ components. It is designed to meet the wide dynamic range required in spread spectrum wireless base station applications. A monolithic quadrature hybrid is teamed with a silicon PIN diode pair in a plastic surface mount package reducing size and assuring consistency from part to part.
Parameter Min. Typ. Max. Unit
Frequency 0.80 1.00 GHz
Insertion Loss (0 mA Control Current) 1 1.5 dB
Attenuation @ 3.0 mA Control Current (900 MHz) 18.5 21.5 dB
VSWR All Ports 1.5 1.8
Input 3rd Order Intercept +47 +50 dBm
Group Delay 0.9 1.2 ns
Electrical Specifications at 25°C
SOIC-8
SOIC-8
Parameter
1
Condition Frequency Min. Typ. Max. Unit
Switching Characteristics
2
Rise, Fall (10/90% or 90/10% RF) 5 µs On, Off (50% CTL to 90/10% RF) 8 µs Video Feedthru (Peak) 5 mV
Maximum Input Power for <1 dB Attenuation Variation +15 dBm
Operating Characteristics at 25°C (0, +5 V)
1. All measurements made in a 50 system, unless otherwise specified.
2. 0–4 mA square wave total control current.
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2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com
Specifications subject to change without notice. 6/01A
HIP3™ Variable Attenuator 0.80–1.00 GHz AV101-12
VSWR (:1)
Input/Output VSWR vs. Current
@ 800 MHz
1.0
1.1
1.2
1.3
1.4
1.5
0.0000 0.0010 0.0020 0.0030 0.0040 0.0050
Current (Amps)
Input
Output
VSWR (:1)
Input/Output VSWR vs. Current
@ 900 MHz
1.0
1.1
1.2
1.3
1.4
1.5
Current (Amps)
Input
Output
0.0000 0.0010 0.0020 0.0030 0.0040 0.0050
Attenuation (dB)
0.0000 0.0010 0.0020 0.0030 0.0040 0.0050
Attenuation vs. Current
-70.0
-50.0
-60.0
-40.0
-30.0
-20.0
-10.0
0.0
Current (Amps)
800 MHz
900 MHz
1000 MHz
Attenuation (dB)
0.80 0.85 0.90 0.95 1.00
Attenuation vs. Frequency
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
Frequency (GHz)
0.0 mA
0.2 mA
0.9 mA
1.9 mA
2.8 mA
3.5 mA
Input/Output VSWR vs. Current
@ 1000 MHz
1.0
1.1
1.2
1.3
1.4
1.5
Current (Amps)
Input
Output
VSWR (:1)
0.0000 0.0010 0.0020 0.0030 0.0040 0.0050
Diode Current (mA)
400 600 800 1000
Typical PIN Diode Current vs. Voltage
0.01
0.1
1
10
Diode Voltage (mV)
Typical Performance Data
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HIP3 Variable Attenuator 0.80–1.00 GHz AV101-12
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 Email sales@alphaind.com www.alphaind.com 3
Specifications subject to change without notice. 6/01A
Characteristic Value
RF Input Power 0.5 W CW, 4 W @ 12.5%
Duty Cycle
Control Current 50 mA per Diode
Operating Temperature -40 to +85°C
Storage Temperature -40 to +85°C
Maximum Reverse Diode Voltage -10 V
Electrostatic Discharge +125 V
Absolute Maximum Ratings
Note: Operating this device above any of these parameters may cause irreversible damage.
Recommended Board Layout
0.1630
0.0200 DIA.
VIA 4 PLACES
0.0190 TYP.0.0555 TYP.
SOIC-8
0.049
(1.24 mm)
0.016
(0.41 mm)
0.016 MAX.
(0.41 mm) x
45˚ CHAMFER
PIN 1
0.197 (5.00 mm)
0.189 (4.80 mm)
0.068
(1.73 mm) MAX.
0.010 (0.25 mm)
0.004 (0.10 mm)
0.010 (0.25 mm)
0.007 (0.17 mm)
0.158 (4.00 mm)
0.150 (3.80 mm)
MAX.
0.020 (0.51 mm) MAX.
0.244 (6.20 mm)
0.228 (5.80 mm)
0.050 (1.27 mm) BSC
PIN 8
PIN 1
INDICATOR
123 4
CONTROL CURRENT
GND
220 pF
RF In
GND
680
876 5
GND
220 pF
100 nH 100 nH
RF Out
CONTROL CURRENT
GND
Pin Out
CONTROL CURRENT
CONTROL CURRENT
RF OUT
RF IN
Connection Diagram
Material is 10 mil FR4.
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