Datasheet ATF-46101 Datasheet (HP)

2 – 10 GHz Medium Power
Gallium Arsenide FET

Technical Data

ATF-46101

Features

• High Output Power:

27.0␣ dBm Typical P

• High Gain at 1 dB
Compression:

12.0␣ dB Typical G

• High Power Efficiency:

1 dB

at 4␣ GHz

1 dB

at 4␣ GHz

gate length GaAs FET is an
interdigitated four-cell structure
using airbridge interconnects
between drain fingers. Total gate
periphery is 1.25␣ millimeters.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.

38% Typical at 4␣ GHz

This device is suitable for applica-

Description

The ATF-46101 is a gallium
arsenide Schottky-barrier-gate
field effect transistor designed for
medium power, linear amplifica­tion in the 2 to 10 GHz frequency
range. This nominally 0.5␣ micron

Electrical Specifications, T

Symbol Parameters and Test Conditions

P

1 dB

Power Output @ 1 dB Gain Compression: f = 4.0 GHz dBm 25.0 27.0

tions in space, airborne, military
ground and shipboard, and
commercial environments. It is
supplied in a hermetic high
reliability package with low
parasitic reactance and minimum
thermal resistance.

= 25° C

A

[1]

VDS = 9 V, IDS = 125 mA f = 8.0 GHz 26.5

G

1 dB

1 dB Compressed Gain: VDS = 9 V, IDS = 125 mA f = 4.0 GHz dB 9.0 10.0

f = 8.0 GHz 5.0

η

add

g

m

I

DSS

V

P

Note:

1. RF Performance is determined by packaging and testing 10 samples per wafer.

Efficiency @ P

1dB

: V

= 9 V, I

DS

= 125 mA f = 4.0 GHz % 38

DS

Transconductance: VDS = 2.5 V, IDS = 125 mA mmho 100

Saturated Drain Current: VDS = 2.5 V, VGS = 0 V m A 200 330 450

Pinch-off Voltage: VDS = 2.5 V, IDS = 5 mA V -5.4 -3.5 -2.0

100 mil Flange Package

Units Min. Typ. Max.

5965-8731E

5-98

ATF-46101 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

DS

V

GS

V

GD

I

DS

P

T

T

CH

T

STG

Thermal Resistance: θjc = 75°C/W; T
Liquid Crystal Measurement: 1␣ µm Spot Size

Drain-Source Voltage V +14
Gate-Source Voltage V -7
Gate-Drain Voltage V -16

Drain Current mA I
Power Dissipation

[2,3]

W 2.0

Channel Temperature °C 175
Storage Temperature °C -65 to +175

= 150°C

CH

[4]

DSS

[1]

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

2. T

MOUNTING SURFACE

= 25° C.

3. Derate at 13 mW/° C for

> 25°C.

T

CASE

4. The small spot size of this tech­nique results in a higher, though

more accurate determination of θ

than do alternate methods. See
MEASUREMENTS section for
more information.

jc

ATF-46101 Typical Performance, T

28

P

27

(dBm)

26

1 dB

P

25

24

2.0 6.04.0 8.0 10.0 12.0

1 dB

G

1 dB

FREQUENCY (GHz)

Figure 1. Power Output @ 1 dB Gain
Compression and 1 dB Compressed
Gain vs. Frequency.
VDS = 9V, IDS = 125 mA.

20

15

10

5

0

30

25

20

15

(dBm)

(dBm)

OUT

1 dB

P

G

10

5

0

0 5 10 15

Figure 2. Output Power and Power
Added Efficiency vs. Input Power.
VDS = 9 V, IDS = 125 mA, f = 4.0 GHz.

= 25° C

A

PIN (dBm)

20 25

25

20

40

30

20

10

0

15

10

GAIN (dB)

(%)

add

5

η

0

1.0 2.0 4.0 6.0

MSG

2

|S21|

FREQUENCY (GHz)

Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 9 V, IDS = 125 mA.

MAG

MAG

14.010.0

5-99

Typical Scattering Parameters, Common Emitter, Z

Freq. S

11

S

21

= 50 Ω, TA=25°C, V

O

S

12

=9 V, I

DS

=␣ 125 mA

DS␣

S

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.

1.0 .94 -56 12.8 4.37 135 -31.4 .027 52 .64 -28

2.0 .86 -101 10.7 3.41 98 -27.3 .043 30 .59 -56

3.0 .82 -131 8.4 2.64 71 -26.9 .045 18 .58 -79

4.0 .82 -152 6.7 2.16 48 -26.4 .048 9 .62 -98

5.0 .80 -173 5.4 1.86 26 -26.0 .050 -1 .63 -112

6.0 .79 165 4.3 1.64 5 -25.8 .051 -12 .65 -126

7.0 .78 143 3.1 1.43 -18 -25.4 .054 -24 .65 -145

8.0 .78 131 1.6 1.20 -36 -24.7 .058 -37 .70 -166

9.0 .77 123 0.3 1.03 -55 -23.9 .064 -40 .73 173

10.0 .76 118 -1.2 .87 -72 -23.1 .070 -52 .76 158

11.0 .67 104 -2.0 .79 -91 -22.6 .074 -57 .79 146

12.0 .60 86 -2.7 .73 -110 -21.2 .087 -66 .83 136

13.0 .54 71 -3.5 .67 -133 -19.7 .104 -79 .87 124

14.0 .50 64 -4.0 .63 -154 -15.9 .160 -99 .92 115

A model for this device is available in the DEVICE MODELS section.

100 mil Flange Package Dimensions

.05

R, TYP

1.3

SOURCE

DRAIN

.062 DIA.

1.57 (2) PLCS

SOURCE

.12

3.0

3

.03

0.8

.42

10.7

.265

6.73

4

GATE

1

2

0.025 ± 0.003 mils

0.64 ± 0.08 mm

22

.044

1.12

.06

1.6

Package marking code is 461

.100

2.54

.300 min

Notes:
(unless otherwise specified)

1. Dimensions are

2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13

in

mm

.004 ± .002

.10 ± .05

5-100