Datasheet ATF-45171 Datasheet (HP)

2 – 8 GHz Medium Power
Gallium Arsenide FET

Technical Data

ATF-45171

Features

• High Output Power:

29.0␣ dBm Typical P

• High Gain at 1dB
Compression:

10.5 dB Typical G

• High Power Efficiency:

38% Typical at 4␣ GHz

• Hermetic Metal-Ceramic
Stripline Package

1 dB

at 4␣ GHz

1 dB

at 4␣ GHz

Description

The ATF-45171 is a gallium
arsenide Schottky-barrier-gate
field effect transistor designed for
medium power, linear amplifica­tion in the 2 to 8 GHz frequency

Electrical Specifications, T

Symbol Parameters and Test Conditions Units Min. Typ. Max.

P

G

η

g

I

V

1 dB

1 dB

add

m

DSS

P

Power Output @ 1 dB Gain Compression: f = 4.0 GHz dBm 28.0 29.0
VDS = 9 V, IDS = 250 mA f = 8.0 GHz 28.0

1 dB Compressed Gain: VDS = 9 V, IDS = 250 mA f = 4.0 GHz dB 9.5 10.5

Efficiency @ P

Transconductance: VDS = 2.5 V, IDS = 250 mA mmho 200

Saturated Drain Current: VDS = 1.75 V, VGS = 0 V m A 400 600 800

Pinch-off Voltage: VDS = 2.5 V, IDS =12.5 mA V -5.4 -4.0 -2.0

1 dB

: V

range. This nominally 0.5 micron
gate length GaAs FET is an
interdigitated four-cell structure
using airbridge interconnects
between drain fingers. Total gate
periphery is 2.5 millimeters.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.

This device is suitable for applica­tions in space, airborne, military
ground and shipboard, and
commercial environments. It is
supplied in a hermetic high
reliability package with low
parasitic reactance and minimum
thermal resistance.

= 25° C

A

f = 8.0 GHz 4.5

= 9 V, IDS = 250 mA f = 4.0 GHz % 38

DS

70 mil Flange Package

5-95

5965-8734E

ATF-45171 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

DS

V

GS

V

GD

I

DS

P

T

T

CH

T

STG

Drain-Source Voltage V +14
Gate-Source Voltage V -7
Gate-Drain Voltage V -16

Drain Current mA I
Power Dissipation

[2,3]

W 3.6

Channel Temperature °C 175
Storage Temperature °C -65 to +175

DSS

[1]

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

2. T

CASE TEMPERATURE

= 25°C.

3. Derate at 24 mW/° C for

> 24°C.

T

CASE

4. The small spot size of this tech­nique results in a higher, though

more accurate determination of θ

than do alternate methods. See
MEASUREMENTS section for
more information.

jc

Thermal Resistance: θjc = 42°C/W; T
Liquid Crystal Measurement: 1␣ µm Spot Size

ATF-45171 Typical Performance, T

30

P

29

(dBm)

28

1 dB

P

27

26

2.0 6.04.0 8.0 10.0 12.0

1 dB

G

1 dB

FREQUENCY (GHz)

Figure 1. Power Output @ 1 dB Gain
Compression and 1 dB Compressed
Gain vs. Frequency.
VDS = 9V, IDS = 250 mA.

20

15

10

5

0

35

30

25

20

(dBm)

(dBm)

15

OUT

1 dB

P

G

10

Figure 2. Output Power and Power
Added Efficiency vs. Input Power.
VDS = 9 V, IDS = 250 mA, f = 4.0 GHz.

= 25° C

A

5

0

0 5 10 15

= 150°C

CH

[4]

PIN (dBm)

20 25 30

25

20

40

30

20

10

0

15

10

GAIN (dB)

(%)

add

5

η

0

1.0 2.0 4.0 6.0

MSG

2

|S21|

FREQUENCY (GHz)

Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 9 V, IDS = 250 mA.

MAG

MSG

14.010.0

5-96

Typical Scattering Parameters, Common Emitter, Z

Freq. S

11

S

21

= 50 Ω, TA=25°C, V

O

S

12

=9 V, I

DS

=␣ 250 mA

DS␣

S

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.

1.0 .91 -83 14.5 5.30 122 -26.7 .046 46 .37 -46

2.0 .83 -137 10.8 3.45 83 -26.4 .048 19 .26 -91

3.0 .83 -167 7.4 2.34 54 -26.0 .050 5 .31 -131

4.0 .86 174 4.4 1.66 32 -25.5 .053 2 .43 -155

5.0 .86 162 2.1 1.28 12 -25.1 .055 0 .52 -167

6.0 .85 152 0.7 1.09 -3 -24.7 .058 -2 .56 -176

7.0 .84 138 0.1 1.01 -22 -24.4 .060 -6 .59 173

8.0 .84 124 -0.9 .90 -40 -23.8 .064 -13 .62 154

9.0 .85 114 -2.5 .75 -59 -23.4 .068 -19 .66 135

10.0 .85 106 -4.3 .61 -70 -22.5 .075 -25 .71 123

11.0 .85 100 -5.2 .55 -81 -21.6 .083 -30 .76 119

12.0 .83 95 -6.2 .49 -90 -20.8 .091 -39 .79 111

13.0 .80 76 -6.7 .46 -107 -19.3 .109 -50 .81 98

14.0 .77 59 -8.0 .40 -125 -18.9 .113 -61 .83 78

A model for this device is available in the DEVICE MODELS section.

70 mil Flange Package Dimensions

.270 MIN

6.86 MIN

22

.070

1.78

SOURCE

SOURCE

4

.26

6.7

.003 ± .002

.08 ± .05

Package marking code is 451

.015
.381

GATE

1

.034

.86

2

DRAIN

.05

1.3

.08

2.0

3

.02
.50

Notes:
(unless otherwise specified)

1. Dimensions are

2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13

.24

6.0

in

mm

5-97