2 – 8 GHz Medium Power
Gallium Arsenide FET
Technical Data
ATF-45101
Features
• High Output Power:
29.0␣ dBm Typical P
• High Gain at 1dB
Compression:
10.0␣ dB Typical G
• High Power Efficiency:
38% Typical at 4␣ GHz
• Hermetic Metal-Ceramic
Stripline Package
1 dB
at 4␣ GHz
1 dB
at 4␣ GHz
Description
The ATF-45101 is a gallium
arsenide Schottky-barrier-gate
field effect transistor designed for
medium power, linear amplification in the 2 to 8 GHz frequency
Electrical Specifications, T
Symbol Parameters and Test Conditions Units Min. Typ. Max.
P
G
η
g
I
V
1 dB
1 dB
add
m
DSS
P
Power Output @ 1 dB Gain Compression: f = 4.0 GHz dBm 28.0 29.0
VDS = 9 V, IDS = 250 mA f = 8.0 GHz 28.0
1 dB Compressed Gain: VDS = 9 V, IDS = 250 mA f = 4.0 GHz dB 9.0 10.0
Efficiency @ P
Transconductance: VDS = 2.5 V, IDS = 250 mA mmho 200
Saturated Drain Current: VDS = 1.75 V, VGS = 0 V m A 400 600 800
Pinch-off Voltage: VDS = 2.5 V, IDS = 12.5 mA V -5.4 -4.0 -2.0
1dB
: V
range. This nominally 0.5 micron
gate length GaAs FET is an
interdigitated four-cell structure
using airbridge interconnects
between drain fingers. Total gate
periphery is 2.5 millimeters.
Proven gold based metallization
systems and nitride passivation
assure a rugged, reliable device.
This device is suitable for applications in space, airborne, military
ground and shipboard, and
commercial environments. It is
supplied in a hermetic high
reliability package with low
parasitic reactance and minimum
thermal resistance.
= 25° C
A
f = 8.0 GHz 4.0
= 9 V, IDS = 250 mA f = 4.0 GHz % 38
DS
100 mil Flange Package
5965-8736E
5-92
ATF-45101 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Drain-Source Voltage V +14
Gate-Source Voltage V -7
Gate-Drain Voltage V -16
Drain Current mA I
Power Dissipation
[2,3]
W 3.6
Channel Temperature °C 175
Storage Temperature °C -65 to +175
DSS
[1]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25°C.
3. Derate at 24 mW/° C for
> 24°C.
T
CASE
4. The small spot size of this technique results in a higher, though
more accurate determination of θ
than do alternate methods. See
MEASUREMENTS section for
more information.
jc
Thermal Resistance: θjc = 42°C/W; T
Liquid Crystal Measurement: 1␣ µm Spot Size
ATF-45101 Typical Performance, T
30
29
(dBm)
28
1 dB
P
27
26
2.0 6.04.0 8.0 10.0 12.0
G
FREQUENCY (GHz)
1 dB
P
1 dB
Figure 1. Power Output @ 1 dB Gain
Compression and 1 dB Compressed
Gain vs. Frequency.
VDS = 9V, IDS = 250 mA.
20
15
10
5
0
35
30
25
20
(dBm)
(dBm)
15
OUT
1 dB
P
G
10
Figure 2. Output Power and Power
Added Efficiency vs. Input Power.
VDS = 9 V, IDS = 250 mA, f = 4.0 GHz.
= 25° C
A
5
0
0 5 10 15
= 150°C
CH
[4]
PIN (dBm)
20 25 30
25
20
40
30
20
10
0
15
10
GAIN (dB)
(%)
add
5
η
0
1.0 2.0 4.0 6.0
MSG
2
|S21|
FREQUENCY (GHz)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 9 V, IDS = 250 mA.
MAG
14.010.0
5-93
Typical Scattering Parameters, Common Emitter, Z
Freq. S
11
S
21
= 50 Ω, TA=25°C, V
O
S
12
=9 V, I
DS
=␣ 250 mA
DS␣
S
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
1.0 .89 -88 14.9 5.54 119 -26.2 .049 43 .31 -63
2.0 .83 -135 10.8 3.48 82 -26.0 .050 18 .33 -108
3.0 .81 -158 7.6 2.40 58 -25.8 .051 7 .39 -129
4.0 .84 -174 5.4 1.86 38 -25.5 .053 3 .46 -144
5.0 .82 -170 3.8 1.55 18 -25.2 .055 -2 .50 -154
6.0 .81 152 2.6 1.36 -2 -24.4 .060 -8 .52 -168
7.0 .81 133 1.2 1.15 -25 -23.9 .064 -15 .55 173
8.0 .81 122 -0.3 .97 -42 -23.5 .067 -20 .59 154
9.0 .80 113 -1.8 .81 -60 -22.6 .074 -31 .64 137
10.0 .79 107 -3.2 .69 -73 -22.0 .079 -40 .68 123
11.0 .77 94 -4.6 .59 -91 -21.5 .084 -45 .72 113
12.0 .73 82 -5.8 .51 -106 -20.3 .097 -55 .76 99
13.0 .68 69 -6.7 .46 -123 -18.3 .121 -63 .78 89
14.0 .64 56 -7.1 .44 -137 -15.9 .161 -79 .80 79
A model for this device is available in the DEVICE MODELS section.
100 mil Flange Package Dimensions
.05
R, TYP
1.3
SOURCE
DRAIN
.062 DIA.
1.57 (2) PLCS
SOURCE
.12
3.0
3
.03
0.8
.42
10.7
.265
6.73
4
GATE
1
2
0.025 ± 0.003 mils
0.64 ± 0.08 mm
22
.044
1.12
.06
1.6
Package marking code is 451
.100
2.54
.300 min
Notes:
(unless otherwise specified)
1. Dimensions are
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
in
mm
.004 ± .002
.10 ± .05
5-94
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