Page 1
2 – 16 GHz Low Noise
Gallium Arsenide FET
Technical Data
ATF-13336
Features
• Low Noise Figure:
1.4␣ dB Typical at 12␣ GHz
• High Associated Gain:
9.0␣ dB Typical at 12␣ GHz
• High Output Power:
17.5␣ dBm Typical P
12␣ GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-and-Reel Packaging
Option Available
[1]
1 dB
at
Electrical Specifications, T
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF
G
A
P
1 dB
G
1 dB
g
m
I
DSS
V
P
Note:
1.
Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.
Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA f = 8.0 GHz dB 1.2
O
Gain @ NFO: VDS = 2.5 V, IDS = 20 mA f = 8.0 GHz dB 11.5
Power Output @ 1 dB Gain Compression: f = 12.0 GHz d Bm 17.5
VDS = 4 V, IDS = 40 mA
1 dB Compressed Gain: VDS = 4 V, IDS = 40 mA f = 12.0 GHz dB 8.5
Transconductance: VDS = 2.5 V, VGS = 0 V mmho 25 55
Saturated Drain Current: VDS = 2.5 V, VGS = 0 V mA 40 50 90
Pinch-off Voltage: VDS = 2.5 V, IDS = 1 mA V -4.0 -1.5 -0.5
Description
The ATF-13336 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
housed in a cost effective microstrip package. Its premium noise
figure makes this device appropriate for use in low noise amplifiers
operating in the 2-16␣ GHz
frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
with a total gate periphery of
250␣ microns. Proven gold based
metallization systems and nitride
passivation assure a rugged,
reliable device.
= 25° C
A
f = 12.0 GHz dB 1.4 1.6
f = 14.0 GHz 1.6
f = 12.0 GHz dB 8.0 9.0
f = 14.0 GHz dB 7.5
36 micro-X Package
5965-8724E
5-36
Page 2
ATF-13336 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Thermal Resistance: θjc = 400°C/W; T
Liquid Crystal Measurement: 1␣ µm Spot Size
Drain-Source Voltage V +5
Gate-Source Voltage V -4
Gate-Drain Voltage V -6
Drain Current mA I
Power Dissipation
[2,3]
m W 225
Channel Temperature °C 175
Storage Temperature °C -65 to +175
= 150°C
CH
[5]
Part Number Ordering Information
Part Number Devices Per Reel Reel Size
ATF-13336-TR1 1000 7"
ATF-13336-STR 10 strip
DSS
[1]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25°C.
3. Derate at 2.5mW/°C for
> 85°C.
T
CASE
4. Storage above +150°C may tarnish
the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it
may be safely stored up to 175°C.
4. The small spot size of this technique results in a higher, though
more accurate determination of θ
than do alternate methods. See
MEASUREMENTS section for
more information.
jc
ATF-13336 Noise Parameters: V
Freq. NF
GHz dB
O
Mag Ang
= 2.5 V, IDS = 20 mA
DS
Γ
opt
4.0 0.8 .63 93 .27
6.0 1.1 .47 138 .10
8.0 1.2 .40 -153 .20
12.0 1.4 .52 -45 .88
14.0 1.6 .57 -2 1.3
ATF-13336 Typical Performance, T
16
14
G
A
2.0
1.5
(dB)
1.0
O
NF
0.5
0
6.0 10.08.0 12.0 14.0 16.0
FREQUENCY (GHz)
NF
O
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2.5V, IDS = 20 mA, TA = 25°C.
12
(dB)
A
10
G
8
6
(dB)
O
NF
Figure 2. Optimum Noise Figure and
Associated Gain vs. I
VDS = 2.5V, f = 12.0 GHz.
= 25° C
A
2.5
2.0
1.5
1.0
02010 40 5030 60
G
A
NF
O
IDS (mA)
DS.
RN/50
14
12
10
8
25
20
(dB)
A
G
15
10
GAIN (dB)
5
0
2.0 4.0 6.0 8.0
MSG
2
|S21|
FREQUENCY (GHz)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2.5 V, IDS = 20 mA.
MAG
10.0 12.0 16.0
5-37
Page 3
Typical Scattering Parameters, Common Emitter, Z
Freq. S
11
S
21
= 50 Ω, TA=25°C, V
O
S
12
= 2.5 V, I
DS
=␣ 20 mA
DS␣
S
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
2.0 .96 -51 10.6 3.39 127 -27.1 .044 57 .61 -41
3.0 .88 -75 10.3 3.28 106 -23.4 .060 33 .58 -51
4.0 .86 -96 10.1 3.19 86 -22.6 .074 25 .57 -57
5.0 .79 -117 9.9 3.13 66 -20.6 .093 12 .54 -65
6.0 .69 -142 10.2 3.22 46 -18.9 .114 1 .49 -79
7.0 .60 -178 10.1 3.21 21 -17.6 .132 -18 .42 -97
8.0 .54 141 9.8 3.10 -4 -17.3 .137 -33 .31 -112
9.0 .56 103 8.9 2.80 -26 -16.7 .147 -48 .21 -121
10.0 .56 74 8.3 2.60 -48 -16.5 .150 -63 .09 -145
11.0 .58 44 7.6 2.39 -68 -16.8 .145 -78 .07 89
12.0 .63 20 6.7 2.17 -90 -17.5 .133 -95 .16 43
13.0 .65 3 6.0 2.00 -108 -18.3 .121 -107 .19 21
14.0 .66 -7 5.5 1.89 -126 -18.9 .114 -121 .19 -4
15.0 .70 -19 4.9 1.76 -144 -19.0 .112 -129 .16 -28
16.0 .72 -34 4.4 1.66 -175 -19.2 .110 -142 .14 -32
A model for this device is available in the DEVICE MODELS section.
36 micro-X Package Dimensions
2.15
(0.085)
SOURCE
4
2.11 (0.083) DIA.
22
DRAIN
133
2
(0.006 ± 0.002)
3
0.508
(0.020)
0.15 ± 0.05
1
GATE
SOURCE
1.45 ± 0.25
(0.057 ± 0.010)
0.56
(0.022)
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx = ± 0.005
mm .xx = ± 0.13
2.54
(0.100)
4.57 ± 0.25
0.180 ± 0.010
5-38
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