Datasheet ATF-13100-GP3 Datasheet (HP)

Page 1
2–18 GHz Low Noise Gallium Arsenide FET
Technical Data
ATF-13100

Features

• Low Noise Figure:
1.1 dB Typical at 12 GHz
• High Associated Gain:
9.5 dB Typical at 12 GHz
17.5 dBm Typical P
at 12 GHz
1 dB

Description

The ATF-13100 is a high perfor­mance gallium arsenide Schottky­barrier-gate field effect transistor chip. This device is designed for use in low noise, wideband amplifier and oscillator applica­tions in the 2-18␣ GHz frequency range.
Electrical Specifications, T
Symbol Parameters and Test Conditions
NF
G
P
G
g
m
I
DSS
V
A
1 dB
1 dB
P
Optimum Noise Figure: VDS = 2.5 V, IDS = 20 mA f = 8.0 GHz dB 0.8
O
Gain @ NFO; VDS = 2.5 V, IDS = 20 mA f = 8.0 GHz dB 12.0
Power Output @ 1 dB Gain Compression f = 12.0 GHz dB m 17.5 VDS = 4 V, IDS = 40 mA
1 dB Compressed Gain; VDS = 4 V, IDS = 40 mA f = 12.0 GHz dB 8.5
Transconductance: VDS = 2.5 V, VGS = 0 V mmho 30 55
Saturated Drain Current; VDS = 2.5 V, VGS = 0 V mA 40 50 90
Pinchoff Voltage: VDS = 2.5 V, IDS = 1 mA V -3.0 -1.5 -0.8
This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
The recommended mounting procedure is to die attach at a
stage temperature of 300° C using
a gold-tin preform under forming gas. Assembly can be preformed with either wedge or ball bonding using 0.7 mil gold wire. See also “Chip Use” in the APPLICATIONS section.
= 25° C
A

Chip Outline

D
SS
G
[1]
f = 12.0 GHz dB 1.1 1.2 f = 15.0 GHz dB 1.5
f = 12.0 GHz dB 9.0 9.5 f = 15.0 GHz dB 8.0
Units Min. Typ. Max.
Note:
1.
RF performance is determined by assembling and testing 10 samples per wafer
5-33
.
5965-8694E
Page 2

ATF-13100 Absolute Maximum Ratings

Absolute
Symbol Parameter Units Maximum
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Drain-Source Voltage V +5 Gate-Source Voltage V -4 Gate-Drain Voltage V -6 Drain Current mA I Power Dissipation
[2,3]
m W 225
DSS
Channel Temperature °C 175 Storage Temperature °C -65 to +175
Thermal Resistance: θjc = 250°C/W; TCH = 150°C Liquid Crystal Measurement: 1 µm Spot Size
[4]

Part Number Ordering Information

Part Number Devices Per Tray
ATF-13100-GP3 50
[1]
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
MOUNTING SURFACE
= 25°C.
3. Derate at 4 mW/°C for
T
MOUNTING SURFACE
> 119°C.
4. The small spot size of this tech­nique results in a higher, though
more accurate determination of θ
than do alternate methods. See MEASUREMENTS section for more information.
jc
ATF-13100 Noise Parameters: V
Freq. NF
GHz dB
O
Mag Ang
= 2.5 V, IDS = 20 mA
DS
Γ
opt
4.0 0.4 0.60 30 0.32
6.0 0.7 0.32 68 0.21
8.0 0.8 0.25 102 0.15
12.0 1.1 0.23 -165 0.09
16.0 1.5 0.32 -112 0.21
ATF-13100 Typical Performance, T
2.0
G
1.5
(dB)
1.0
O
NF
NF
0.5
0
2.0 6.04.0 8.0 10.0 12.0 16.0
Figure 1. Optimum Noise Figure and Associated Gain vs. Frequency. VDS = 2.5V, IDS = 20 mA, TA = 25°C.
A
O
FREQUENCY (GHz)
20
15
10
(dB)
A
G
5
0
= 25° C
A
4.0
3.0
(dB)
O
2.0
NF
1.0 010520302515 35
Figure 2. Optimum Noise Figure and Associated Gain vs. I VDS = 2.5V, f = 12.0 GHz.
NF
IDS (mA)
G
A
DS.
O
RN/50
12
10
(dB)
A
G
8
6
5-34
Page 3
Typical Scattering Parameters, Common Emitter, Z
Freq. S
11
S
21
= 50 , TA=25°C, V
O
S
12
= 2.5 V, I
DS
=␣ 20 mA
DS␣
S
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
2.0 .96 -27 13.4 4.68 153 -26.9 .045 75 .55 -16
3.0 .92 -41 13.4 4.65 140 -23.6 .066 67 .52 -24
4.0 .85 -58 13.1 4.54 126 -21.4 .085 59 .49 -33
5.0 .79 -76 12.9 4.40 113 -19.8 .102 50 .44 -41
6.0 .73 -95 12.4 4.19 100 -18.7 .116 42 .38 -48
7.0 .68 -113 12.0 3.97 87 -18.0 .126 34 .30 -54
8.0 .63 -132 11.4 3.71 75 -17.5 .134 25 .24 -64
9.0 .62 -151 10.9 3.51 63 -17.1 .140 18 .18 -75
10.0 .59 -167 10.3 3.27 53 -16.8 .144 11 .13 -84
11.0 .59 173 9.7 3.07 40 -16.5 .149 2 .08 -104
12.0 .57 155 9.0 2.83 30 -16.5 .150 -9 .02 160
13.0 .60 136 8.6 2.69 19 -16.4 .151 -16 .08 106
14.0 .64 116 7.9 2.47 7 -16.4 .151 -25 .15 103
15.0 .67 98 7.1 2.26 -6 -16.4 .152 -34 .23 100
16.0 .73 83 5.8 1.96 -16 -16.9 .143 -40 .31 90
17.0 .77 72 4.6 1.70 -26 -17.0 .141 -45 .36 82
18.0 .80 63 3.5 1.50 -35 -17.4 .135 -48 .40 72
A model for this device is available in the DEVICE MODELS section.

ATF-13100 Chip Dimensions

22
356 µm
14 mil
50 µm
1.97 mil
D
118 µm
4.65 mil
254 µm
10 mil
Note: Die thickness is 4.5 mil, and backside metallization is 200 Å Ti and 2000 Å Au.
SS
G
50 µm
1.97 mil
44 µm
1.73 mil
92 µm
3.62 mil
5-35
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