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5-29
0.5 – 12 GHz General Purpose
Gallium Arsenide FET
Technical Data
Features
• High Associated Gain:
13.0␣ dB Typical at 4␣ GHz
• Low Bias:
VDS = 2 V, I
DS
= 25␣ mA
• High Output Power:
20.0␣ dBm typical P
1 dB
at 4␣ GHz
• Low Noise Figure:
1.2␣ dB Typical at 4␣ GHz
• Cost Effective Ceramic
Microstrip Package
• Tape-and-Reel Packaging
Option Available
[1]
ATF-10736
36 micro-X PackageDescription
The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
housed in a cost effective
microstrip package. Its noise
figure makes this device appropriate for use in the gain stages of
low noise amplifiers operating in
the 0.5-12 GHz frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconcnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
Electrical Specifications, T
A
= 25° C
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF
O
Optimum Noise Figure: VDS = 2 V, IDS = 25 mA f = 2.0 GHz dB 0.9
f = 4.0 GHz dB 1.2 1.4
f = 6.0 GHz dB 1.4
G
A
Gain @ NFO; VDS = 2 V, IDS = 25 mA f = 2.0 GHz dB 16.5
f = 4.0 GHz dB 12.0 13.0
f = 6.0 GHz dB 10.5
P
1 dB
Power Output @ 1 dB Gain Compression f = 4.0 GHz dBm 20.0
VDS = 4 V, IDS = 70 mA
G
1 dB
1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA f = 4.0 GHz dB 12.0
g
m
Transconductance: VDS = 2 V, VGS = 0 V mmho 70 140
I
DSS
Saturated Drain Current: VDS = 2 V, VGS = 0 V m A 70 130 180
V
P
Pinchoff Voltage: VDS = 2 V, IDS = 1 mA V -4.0 -1.3 -0.5
Note:
1. Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
5965-8698E
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ATF-10736 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
[1]
V
DS
Drain-Source Voltage V +5
V
GS
Gate-Source Voltage V -4
V
GD
Gate-Drain Voltage V -7
I
DS
Drain Current mA I
DSS
P
T
Total Power Dissipation
[2,3]
mW 430
T
CH
Channel Temperature °C 175
T
STG
Storage Temperature
[4]
°C -65 to +175
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25° C.
3. Derate at 2.9 mW/° C for
T
CASE
> 25°C.
4. Storage above +150° C may tarnish
the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it
may be safely stored up to 175°C.
5. The small spot size of this technique results in a higher, though
more accurate determination of θ
jc
than do alternate methods. See
MEASUREMENTS section for
more information.
Part Number Ordering Information
Part Number Devices Per Reel Reel Size
ATF-10736-TR1 1000 7"
ATF-10736-STR 10 STRIP
For more information, see “Tape and Reel Packaging for Semiconductor Devices.”
ATF-10736 Typical Performance, T
A
= 25° C
Thermal Resistance: θjc = 350°C/W; TCH = 150°C
Liquid Crystal Measurement: 1µm Spot Size
[5]
ATF-10736 Noise Parameters: V
DS
= 2 V, IDS = 25 mA
Freq. NF
O
Γ
opt
GHz dB
Mag Ang
RN/50
1.0 0.8 0.88 41 0.52
2.0 0.9 0.75 85 0.27
4.0 1.2 0.48 159 0.08
6.0 1.4 0.46 -122 0.08
8.0 1.7 0.53 -71 0.43
FREQUENCY (GHz)
NF
O
(dB)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 4 V, IDS = 70 mA.
FREQUENCY (GHz)
GAIN (dB)
2.0
1.5
1.0
0.5
0
18
15
12
9
6
G
A
(dB)
2.0 6.04.0 8.0 10.0 12.0
G
A
NF
O
|S21|
2
MSG
MSG
MAG
0.5 1.0 2.0 4.0
6.0 8.0 12.0
30
25
20
15
10
5
0
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2V, IDS = 25 mA, TA = 25°C.
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
DS
= 2 V, IDS = 25 mA.
FREQUENCY (GHz)
GAIN (dB)
|S21|
2
MSG
MAG
0.5 1.0 2.0 4.0
6.0 8.0 12.0
30
25
20
15
10
5
0
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Typical Scattering Parameters, Common Source, Z
O
= 50 Ω, TA=25°C, V
DS
=2 V, I
DS␣
=␣ 25 mA
Freq. S
11
S
21
S
12
S
22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.5 .96 -20 15.4 5.90 162 -32.4 .024 77 .50 -10
1.0 .92 -40 15.2 5.77 144 -26.7 .046 66 .48 -21
2.0 .77 -76 13.8 4.92 109 -21.3 .086 52 .39 -34
3.0 .59 -107 12.5 4.20 83 -20.0 .111 40 .33 -45
4.0 .49 -136 11.2 3.64 57 -17.3 .137 24 .26 -61
5.0 .43 -179 10.0 3.15 32 -15.5 .167 9 .14 -65
6.0 .49 138 8.6 2.74 8 -14.9 .179 -5 .05 22
7.0 .57 106 7.3 2.32 -13 -14.8 .183 -18 .19 60
8.0 .68 81 5.6 1.92 -32 -14.7 .185 -33 .33 57
9.0 .73 62 4.2 1.62 -50 -14.8 .183 -40 .42 46
10.0 .77 47 3.0 1.41 -66 -14.8 .182 -52 .46 38
11.0 .82 36 1.0 1.12 -81 -14.6 .186 -67 .50 27
12.0 .85 22 -0.2 0.98 -97 -14.5 .189 -75 .51 15
Typical Scattering Parameters, Common Emitter, Z
O
= 50 Ω, TA=25°C, V
DS
=4 V, I
DS␣
=␣ 70 mA
Freq. S
11
S
21
S
12
S
22
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.5 .90 -32 19.0 8.95 147 -34.9 .018 77 .40 -7
1.0 .79 -53 18.0 7.96 128 -28.6 .037 70 .38 -17
2.0 .57 -96 15.5 5.99 90 -22.5 .075 56 .34 -38
3.0 .43 -129 13.3 4.60 64 -19.5 .106 43 .31 -50
4.0 .36 -163 11.6 3.78 39 -17.3 .136 31 .28 -51
5.0 .35 156 10.1 3.21 16 -15.6 .166 14 .22 -45
6.0 .47 110 8.8 2.76 -11 -14.5 .189 -5 .15 -4
7.0 .65 78 7.0 2.23 -36 -14.2 .196 -23 .28 35
8.0 .77 58 5.1 1.80 -56 -14.1 .198 -38 .42 37
9.0 .83 44 3.5 1.50 -72 -14.2 .195 -48 .51 33
10.0 .86 30 2.4 1.32 -88 -14.5 .188 -64 .55 26
11.0 .87 16 1.1 1.13 -106 -14.8 .182 -77 .60 18
12.0 .91 1 0.1 0.99 -123 -15.3 .171 -91 .65 7
A model for this device is available in the DEVICE MODELS section.
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36 micro-X Package Dimensions
1
3
4
2
SOURCE
SOURCE
DRAIN
GATE
2.15
(0.085)
2.11 (0.083) DIA.
0.508
(0.020)
2.54
(0.100)
4.57 ± 0.25
0.180 ± 0.010
0.15 ± 0.05
(0.006 ± 0.002)
Notes:
1. Dimensions are in millimeters (inches)
2. Tolerances: in .xxx = ± 0.005
mm .xx = ± 0.13
0.56
(0.022)
1.45 ± 0.25
(0.057 ± 0.010)
107
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