The 53253 is two power MOSFET optocouplers in a single 8-pin dual-in-line package suitable for applications where
two independent switches and radiation tolerant performance are required. The popular hermetic eight-pin dual-in-line
ceramic package combined with 1000 VDC isolation between input and output and between two isolated relays,
makes this device ideal for solid-state relay applications. Performance is specified over the full military temperature
range. This device is available as COTS, or screened to MIL-PRF-38534, Table C-IX, Class H or custom screening.
Lead options support both through-hole and surface-mount assembly. Gold plated leads are standard, but other lead
finishes per MIL-PRF-38534 are also available.
Functionally, the device operates as two SPST, normally open (2 Form A) solid-state relays. Each relay is actuated by
an input current, which can be driven from a standard TTL device. The input current biases a light emitting diode that is
optically coupled to an integrated photovoltaic diode array. The photovoltaic diode array energizes control circuitry that
operates the output MOSFET.
Micropac Industries cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement.
Micropac reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Preliminary Data Sheet 53253
Radiation Tolerant Dual Power MOSFET Optocouplers
ELECTRICAL SPECIFICATIONS (Pre-Irradiation)
= -55°C to +125°C, unless otherwise specified.
T
A
ParameterSymbolMin.Typ.*Max.Unit
Output Withstand VoltageV
Output On-ResistanceR
Output Leakage CurrentI
Input Forward VoltageV
Input Reverse Breakdown
Voltage
Input-Output IsolationI
Channel-channel IsolationI
Turn-On Timet
Turn-Off timet
* All typical values are at TA = 25°C, I
O(OFF)
(ON)
O (OFF)
F
V
R
I-O
ISO
ON
OFF
F (ON)
90V
1.01.62.1VIF = 10 mA
5V
= 10 mA, V
s
0.61.2
10
1
1
Ω
A
µ
A
µ
A
µ
6ms
2ms
= 0.6 V unless otherwise specified.
F (OFF)
Test ConditionsNotes
= 0.6 V
V
F
I
= 10 µA
O
I
= 10 mA
F
= 0.8 A
I
O
(pulse duration ≤ 30 ms)
= 0.6 V
V
F
V
= 90 V
O
I
= 10 µA
F
RH ≤ 45%, t = 5 s
V
= 1000 VDC
I-O
T
= 25°C
A
RH ≤ 45%, t = 5 s
V
= 1000 VDC
ISO
= 25°C
T
A
I
= 10 mA
F
= 28 V
V
O
= 0.8 A
I
O
I
= 10 mA
F
= 28 V
V
O
= 0.8 A
I
O
2
3
3
Notes:
1. Maximum average current rating where the case temperature (T
2. During the pulsed R
measurement (IO duration < 30 ms), ambient (TA) and case temperature (TC) are equal.
ON
) is maintained below 120°C.
C
3. This is a momentary withstand test, not a continuous operating condition.
4. Typical junction to case thermal resistance (
) for the device is 15°C/W, where case temperature (TC) is
θ
JC
measured at the center of the package bottom.
CAUTION:
Care should be taken not to exceed the maximum output power dissipation, maximum case temperature, and
maximum junction temperature when repetitively switching loads.
Micropac Industries cannot assume any responsibility for any circuits shown or represent that they are free from patent infringement.
Micropac reserves the right to make changes at any time in order to improve design and to supply the best product possible.