Datasheet 50RIA80 Specification

Bulletin I2401 rev. A 07/00

50RIA SERIES

MEDIUM POWER THYRISTORS Stud Version

Features

High current rating

Excellent dynamic characteristics

dv/dt = 1000V/µs option

Superior surge capabilities

Standard package

Metric threads version available

Types up to 1600V V

DRM

/ V

RRM

Typical Applications

Phase control applications in converters

Lighting circuits

Battery charges

Regulated power supplies and temperature and

speed control circuit

Can be supplied to meet stringent military,

aerospace and other high-reliability requirements

50 A

Major Ratings and Characteristics

Parameters Units

I

T(AV)

@ T

I

T(RMS)

I

TSM

I2t@

V

DRM/VRRM

t

q

T

J

@ 50Hz 1430 1200 A

@ 60Hz 1490 1257 A

50Hz 10.18 7.21 KA2s

@ 60Hz 9.30 6.58 KA2s

typical 110 µs

10 to 120 140 to 160

C

100 to 1200 1400 to 1600 V

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50RIA

50 50 A

94 90 °C

80 80 A

- 40 to 125 °C

Case Style

TO-208AC (TO-65)

1

50RIA Series

Bulletin I2401 rev. A 07/00

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

DRM/VRRM

Type number Code peak and off-state voltage (1) repetitive peak voltage (2) @ T

10 100 150

20 200 300

40 400 500

60 600 700

50RIA 80 800 900 15

100 1000 1100

120 1200 1300

140 1400 1500

160 1600 1700

(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs
(2) For voltage pulses with t

≤ 5ms

p

On-state Conduction

Parameter Units Conditions

I

Max. average on-state current 50 50 A 180° sinusoidal conduction

T(AV)

@ Case temperature 94 90 °C

I

Max. RMS on-state current 80 80 A

T(RMS)

I

Max. peak, one-cycle 1430 1200 A t = 10ms No voltage

TSM

non-repetitive surge current 1490 1257 t = 8.3ms reapplied

2

I

t Maximum I2t for fusing 10.18 7.21 KA2s t = 10ms No voltage Initial TJ = TJ max.

2

I

√t Maximum I2√t for fusing 101.8 72.1 KA2√s t = 0.1 to 10ms, no voltage reapplied, T

V

Low level value of threshold 0.94 1.02 V (16.7% x π x I

T(TO)1

voltage
High level value of threshold 1.08 1.17 (π x I

V

T(TO)

2

voltage

r

Low level value of on-state 4.08 4.78 m Ω (16.7% x π x I

t1

slope resistance

r

High level value of on-state 3.34 3.97 (π x I

t2

slope resistance

Max. on-state voltage 1.60 1.78 V Ipk= 157 A, TJ = 25°C

V

TM

I

Maximum holding current 200 mA TJ = 25°C. Anode supply 22V, resistive load,

H

I

Latching current 400 Anode supply 6V, resistive load

L

, max. repetitive V

VVmA

, maximum non- I

RSM

DRM/IRRM

= TJ max.

J

50RIA

10 to 120 140 to 160

1200 1010 t = 10ms 100% V

1255 1057 t = 8.3ms reapplied Sinusoidal half wave,

9.30 6.58 t = 8.3ms reapplied

7.20 5.10 t = 10ms 100% V

6.56 4.65 t = 8.3ms reapplied

< I < 20 x π x I

T(AV)

< I < 20 x π x I

T(AV)

Initial I

= 2A

T

T(AV)

T(AV)

RRM

RRM

< I < π x I

T(AV)

< I < π x I

T(AV)

= TJ max.

J

), TJ = TJ max.

T(AV)

), TJ = TJ max.

), TJ = TJ max.

T(AV)

), TJ = TJ max.

max.

2

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50RIA Series

Bulletin I2401 rev. A 07/00

Switching

Parameter 50RIA Units Conditions

di/dt Max. rate of rise of turned-on TC = 125°C, VDM = rated V

current V

t

Typical delay time 0.9 TC = 25°C VDM = rated V

d

t

Typical turn-off time 110 TC = 125°C, I

q

≤ 600V 20 0 A/µs Gate pulse = 20V, 15Ω, t

DRM

V

≤ 1600V 100 I

DRM

= (2x rated di/dt) A

TM

Gate pulse = 10V, 15Ω source, t

µs

= 50A, reapplied dv/dt = 20V/µs

TM

dir/dt = -10A/µs, V

Blocking

Parameter 50RIA Units Conditions

dv/dt Max. critical rate of rise of 200 TJ = TJ max. linear to 100% rated V

off-state voltage 500 (*) TJ = TJ max. linear to 67% rated V

(*) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. 50RIA160S90.

V/µs

DRM

= 6µs, tr = 0.1µs max.

p

= 10A dc resistive circuit

DRM ITM

p

=50V

R

= 20µs

DRM

DRM

Triggering

Parameter 50RIA Units Conditions

PGMMaximum peak gate power 10 TJ = TJ max, t

P

Maximum average gate power 2.5

G(AV)

I

Max. peak positive gate current 2.5 A

GM

+V

Maximum peak positive

GM

gate voltage

20

-VGMMaximum peak negative

gate voltage

I

DC gate current required 250 TJ = - 40°C

GT

10

to trigger 100 mA T

50 T

V

DC gate voltage required 3.5 TJ = - 40°C

GT

to trigger 2.5 V T

I

DC gate current not to trigger 5.0 mA

GD

VGDDC gate voltage not to trigger 0.2 V TJ = TJ max

W

V

= 25°C

J

= 125°C

J

= 25°C

J

TJ = TJ max
V

= rated voltage

DRM

≤ 5ms

p

Max. required gate trigger
current/voltage are the
lowest value which will trigger
all units 6V anode-to-cathode
applied

Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated

anode-to-cathode applied

V

DRM

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3

50RIA Series

Bulletin I2401 rev. A 07/00

Thermal and Mechanical Specification

Parameter 50RIA Units Conditions

TJMax. operating temperature range - 40 to 1 25 ° C

Max. storage temperature range - 40 to 125 °C

T

stg

R

Max. thermal resistance, 0.35 K/W DC operation

thJC

junction to case

R

Max. thermal resistance, 0.25 K /W Mounting surface, smooth, flat and greased

thCS

case to heatsink

T Mounting torque Min. 2.8 (25) Nm Non-lubricated threads

Max. 3.4 (30) (lbf-in)

wt Approximate weight 28 (1.0) g (oz)

Case style TO-208AC (TO-65) See Outline Table

∆R

Conduction

thJC

(The following table shows the increment of thermal resistence R

Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions

180° 0.078 0.057 K/ W TJ = TJ max.

120° 0.094 0.098

90° 0.120 0.130

60° 0.176 0.183

30° 0.294 0.296

when devices operate at different conduction angles than DC)

thJC

Ordering Information Table

Device Code

1 - Current code

2 - Essential part number

3 - Voltage code: Code x 10 = V

4 - Critical dv/dt: None = 500V/µs (Standard value)

5 - None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A

M = Stud base TO-208AC (TO-65) M6 X 1

4

50 RIA 160 S90 M

2

1

(See Voltage Rating Table)

RRM

S90 = 1000V/µs (Special selection)

5

43

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Outline Table

50RIA Series

Bulletin I2401 rev. A 07/00

Case Style TO-208AC (TO-65)

All dimensions in millimeters (inches)

130

120

110

100

Maxi mum All owabl e Case Temper at ure ( °C)

90

0 102030405060

50RIA Seri es (100V to 1200V)
R (DC) = 0.35 K/W

thJC

Conduction Angle

30°

60°

90°

120°

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristic

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180°

130

120

110

100

90

Maximum Allowable Case Temperature (°C)

80

0 1020304050607080

Fig. 2 - Current Ratings Characteristic

50RIA Series (100V to 1200V)
R (DC) = 0.35 K/W

thJC

Conduction Period

90°

60°

30°

Average On-state Current (A)

120°

180°

DC

5

50RIA Series

5

Bulletin I2401 rev. A 07/00

80

70

60

50

40

30

20

10

Maximum Average On-state Power Loss (W)

180°
120°

90°
60°
30°

RMS Limi t

Conducti on Angle

50RIA Seri es
(100V to 1200V)
T = 125°C

0

0 1020304050

Average On-state Current (A)

J

Fig. 3 - On-state Power Loss Characteristics

1300

1200

1100

1000

900

800

700

Peak Half Sine Wave On-state Current (A)

600

Number Of Equal Amplit ude Half Cycl e Current Pul ses (N)

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

50RIA Seri es
(100V to 1200V)

110100

Initial T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

100

90

80

70

60

50

40

30

20

10

Maximum Average On-state Power Loss (W)

DC
180°
120°

90°
60°
30°

RMS Limit

Conductio n Period

50RIA Ser ies
(100V to 1200V)
T = 125°C

0

0 1020304050607080

Average On-state Current (A)

J

Fig. 4 - On-state Power Loss Characteristics

1500

Maximum Non Repetitive Surge Current

1400

1300

1200

1100

1000

900

800

700

600

Peak Half Sine Wave On-state Current (A)

500

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

50RIA Seri es
(10 0V to 1200V)

0.01 0.1 1

Pulse Train Duration (s)

Initial T = 125°C

No Vol tage Reapp li ed

Rated V Reapplied

RRM

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

J

130

50RIA Series (1400V to 1600V)
R (DC) = 0.35 K/W

thJC

120

110

30°

100

60°

90

Max imu m All owabl e Ca se Te mpera ture (° C)

80

0 5 10 15 20 25 30 35 40 45 50 5

Average On-state Current (A)

6

Conductio n Angle

90°

120°

180°

130

50RIA Series (1400V to 1600V)
R (DC) = 0.35 K/W

thJC

120

110

Conduction Period

100

90

Maximum Allowable Case Temperature (°C)

80

0 10203040 5060708090

60°

90°

120°

180°

Average On-state Current (A)

Fig. 8 - Current Ratings CharacteristicsFig. 7 - Current Ratings Characteristics

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DC30°

50RIA Series

Bulletin I2401 rev. A 07/00

90

180°

80

120°

70

60

50

40

30

20

10

Maximum Average On-state Power Loss (W)

90°
60°
30°

RMS Limit

Conduction Angl e

50RIA Series
(1400V to 1600V)
T = 125°C

0

0 5 10 15 20 2 5 30 35 40 45 50

Average On-state Current (A)

J

Fig. 9 - On-state Power Loss Characteristics

1100

1000

900

800

700

600

Peak Half Sine Wave On-state Current (A)

500

Number Of Equal Amplitude Half Cycle Curr ent Pulses (N)

At Any Rated Load Condition And With
Rated V Applied Following Surge.

RRM

50RIA Seri es
(1400V to 1600V)

110100

Initial T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

120

110

100

90

80

70

60

50

40

30

20

10

Maximum Average On-state Power Loss (W)

0

DC
180°
120°

90°
60°
30°

RMS Limit

Conducti on Period

50RIA Seri es
(1400V t o 1600V)
T = 125°C

J

0 1020304050607080

Average On-state Current (A)

Fig. 10 - On-state Power Loss Characteristics

1200

Maximum Non Repetitive Surge Current

1100

1000

900

800

700

600

500

Peak Half Sine Wave On-state Current (A)

400

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

50RIA Seri es
(1400V to 1600V)

0.01 0. 1 1

Pulse Train Duration (s)

Initial T = 125°C

No Voltage Reapplied

Rated V Reapplied

RRM

Fig. 11 - Maximum Non-Repetitive Surge Current Fig. 12 - Maximum Non-Repetitive Surge Current

J

1000

100

T = 25°C

J

T = 125°C

10

Instantaneous On-state Current (A)

1

0.5 1 1.5 2 2.5 3 3.5 4 4.5

Instantaneous On-state Voltage (V)

J

50RIA Series (100V to 1200V)

Fig. 13 - Forward Voltage Drop Characteristics

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1000

100

T = 25°C

J

T = 125°C

10

Instantaneous On-state Current (A)

1

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5

Instantaneous On-state Voltage (V)

J

50RIA Series (1400V to 1600V)

Fig. 14 - Forward Voltage Drop Characteristics

7

50RIA Series

Bulletin I2401 rev. A 07/00

1

Steady State Value

R = 0.35 K/W

thJ-hs

Transient Thermal Impedance Z (K/W)

Instantaneous Gate Voltage (V)

thJ-hs

0.1

0.01

0.001 0.01 0.1 1 10

100

Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 30 ohms; tr<=0.5 µs
b) Recommended load line for
<=30% rated di/dt : 20V, 65 ohms
tr<=1 µs

10

1

VGD

0.1

0.001 0.01 0.1 1 10 100 1000

IGD

50RIA Series

Square Wave Pul se Duratio n (s)

Fig. 15 - Thermal Impedance Z

(b)

Tj=125 °C

Instantane ous Gate Current (A)

(a)

Tj=-40 °C

Tj=25 °C

50RIA Ser ies Frequ ency Limited by PG(AV)

Fig. 16 - Gate Characteristics

Characteristics

thJC

(1) PGM = 10W, tp = 5ms
(2) PGM = 20W, tp = 2.5ms
(3) PGM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500µs

(1)

(2)

(3) (4)

8

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