Datasheet 3SK134B-VM, 3SK134B-T2, 3SK134B-T1, 3SK134B Datasheet (NEC)

©

1993

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

3SK134B

FEATURES

• High Power Gain : G ps = 23.0 dB TYP. (@ = 900 MHz)

• Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz)

• Suitable for use as RF amplifier in UHF TV tuner.

• Automatically Mounting : Embossed Type Taping

• Surface Mount Package : 4 Pins Mini Mold (EIAJ: SC-61)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage VDSX 18 V
Gate1 to Source Voltage V

G1S ±8 (±10)

*1

V

Gate2 to Source Voltage VG2S ±8 (±10)

*1

V
Gate1 to Drain Voltage VG1D 18 V
Gate2 to Drain Voltage V

G2D 18 V

Drain Current ID 25 mA
Total Power Dissipation PD 200 mW
Channel Temperature T

ch 125 °C

Storage Temperature Tstg –55 to +125 °C

*1 : R

L ≥ 10 kΩ

PRECAUTION:

Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage

fields.

RF AMP. FOR UHF TV TUNER

N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR

4 PINS MINI MOLD

PACKAGE DIMENSIONS

(Unit : mm)

PIN CONNECTIONS

1.

2.

3.

4.

Source
Drain
Gate2
Gate1

2.9±0.2

2.8

– 0.3

+0.2

1.5

– 0.1

+0.2

(1.8)

0.85 0.95

0.6

– 0.05

+0.1

0.4

– 0.05

+0.1

0.4

– 0.05

+0.1

0.4

– 0.05

+0.1

(1.9)

12

43

5

o

5

o

5

o

5

o

0.8

1.1

– 0.1

+0.2

0.16

– 0.05

+0.1

0 to 0.1

Document No. P10566EJ2V0DS00 (2nd edition)
(Previous No. TD-2398)
Date Published August 1995 P
Printed in Japan

3SK134B

2

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS

Drain to Source Breakdown Voltage

BVDSX 18 V VG1S = VG2S = –2 V, ID = 10 µA
Drain Current IDSX 0.4 8.0 mA VDS = 10 V, VG2S = 4 V, VG1S = 0.5 V
Gate1 to Source Cutoff Voltage VG1S(off) –2.0 V VDS = 10 V, VG2S = 4 V, ID = 10 µA
Gate2 to Source Cutoff Voltage VG2SS(off) –0.7 V VDS = 10 V, VG1S = 4 V, ID = 10 µA
Gate1 Reverse Current IG1SS ±20 nA VDS = VG2S = 0, VG1S = ±8 V
Gate2 Reverse Current IG2SS ±20 nA VDS = VG1S = 0, VG2S = ±8 V

Forward Transfer Admittance |yfs| 25.0 29.0 35.0 mS

VDS = 10 V, VG2S = 4 V, ID = 10 mA
f = 1 kHz

Input Capacitance Ciss 1.5 2.5 3.5 pF

VDS = 10 V, VG2S = 4 V, ID = 10 mA

Output Capacitance Coss 0.6 1.1 1.6 pF

f = 1 MHz

Reverse Transfer Capacitance Crss 0.02 0.03 pF
Power Gain Gps 20.0 23.0 dB

VDS = 10 V, VG2S = 4 V, ID = 10 mA

Noise Figure NF 2.4 3.5 dB

f = 900 MHz

IDSX Classification

Rank U55/UEE U56/UEF
Marking U55 U56
IDSX (mA) 0.4 to 5.0 3.0 to 8.0

3SK134B

3

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

T

A

– Ambient Temperature – °C

|y

fs

| – Forward Transfer Admittance – mS

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

I

D

– Drain Current – mA

INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE

V

G2S

– Gate2 to Source Voltage – V

C

iss

– Input Capacitance – pF

P

D

– Total Power Dissipation – mW

FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE

V

DS

– Drain to Source Voltage – V

I

D

– Drain Current – mA

0

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

5

10

15 20

20

25

15

10

5

1.0

2.0

–1.0

0

2.0

4.0 5.0

0

25

50

100 125

75

DRAIN CURRENT vs
GATE1 TO SOURCE VOLTAGE

V

G1S

– Gate1 to Source Voltage – V

I

D

– Drain Current – mA

0

1.0

2.0

20

10

V

G1S

– Gate1 to Source Voltage – V

0

30

40

20

10

1.0 3.0

0

4.0

5.0

2.0

1.0

3.0

|y

fs

| – Forward Transfer Admittance – mS

0

40

20

10

30

4

12

20816

100

200

ID = 10 mA
(at VDS = 10 V
V

G2S

= 4 V)

f = 1 MHz

V

G2S

= 4 V

1.1 V

1.0 V

0.9 V

0.8 V

V

G1S

= 1.2 V

V

DS

= 10 V

f = 1 kHz

1 V

2 V

3 V

4 V

V

G2S

= 5 V

4 V

3 V
2 V

1 V

V

DS

= 10 V

V

G2S

= 5 V

VDS = 10 V

f = 1 kHz

V

G2S

= 4 V

300

400

Free air

3SK134B

4

OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE

C

oss

– Output Capacitance – pF

V

G2S

– Gate2 to Source Voltage – V

–1.0

1.0 2.0 3.00

POWER GAIN AND NOISE FIGURE vs.
GATE2 TO SOURCE VOLTAGE

G

ps

– Power Gain – dB

NF – Noise Figure – dB

V

G2S

– Gate2 to Source Voltage – V

–2.0 8.00 2.0 4.0 6.0

20

10

0

–10

–20

5

0

102.0

1.5

1.0

0.5

0

ID = 10 mA
(at VDS = 10 V
V

G2S

= 4 V)

f = 1 MHz

ID = 10 mA
(at V

DS

= 10 V

V

G2S

= 4 V)

f = 900 MHz

G

ps

NF

4.0

900 MHz Gps AND NF TEST CIRCUIT

V

G2S

(3 V)

1 000 pF

47 kΩ

1 000 pF

to 10 pF

to 10 pF

INPUT
50 Ω

L

1

47 kΩ RFC

L

2

to 10 pF

OUTPUT
50 Ω

1 000 pF

1 000 pF

V

G1S

VDD (6 V)

L

1

, L2; 35 × 5 × 0.2 mm

to 10 pF

2

3SK134B

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document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11