Datasheet 2SK2512 Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2512 is N-Channel MOS Field Effect Transistor designed

for high current switching applications.

2SK2512

PACKAGE DIMENSIONS

(in millimeter)

FEATURES

• Low On-Resistance
RDS (on)1 = 15 mΩ (VGS = 10 V, ID = 23 A)

DS (on)2 = 23 mΩ (VGS = 4 V, ID = 23 A)

R

• Low Ciss Ciss = 2 100 pF TYP.

• Built-in G-S Protection Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage VDSS 60 V
Gate to Source Voltage V
Drain Current (DC) ID(DC) ±45 A
Drain Current (pulse)* ID(pulse) ±180 A
Total Power Dissipation (T
Total Power Dissipation (TA = 25 ˚C) PT2 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature T
* PW ≤ 10 µs, Duty Cycle ≤ 1 %

c = 25 ˚C) PT1 35 W

GSS ±20 V

stg –55 to +150 ˚C

10.0±0.3 4.5±0.2

15.0±0.3

0.7±0.1

2.54

123

MP-45F (ISOLATED TO-220)

3.2±0.2

3±0.14±0.2

1.5±0.2

2.54

Drain

2.7±0.2

12.0±0.213.5MIN.

2.5±0.11.3±0.2

0.65±0.1

1. Gate

2. Drain

3. Source

The diode connected between the gate and source of the transistor

serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.

Document No. D10291EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan

Gate
Gate

Protection
Diode

Source

Body
Diode

©

1995

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2512

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS (on)1 11 15 VGS = 10 V, ID = 23 A
Drain to Source On-Resistance RDS (on)2 16 23 VGS = 4 V, ID = 23 A
Gate to Source Cutoff Voltage VGS (off) 1.0 1.5 2.0 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs |1520 VDS = 10 V, ID = 23 A
Drain Leakage Current IDSS 10 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±10 VGS = ±20 V, VDS = 0
Input Capacitance Ciss 2 100 VDS = 10 V
Output Capacitance Coss 1 100 VGS = 0
Reverse Transfer Capacitance Crss 500 f = 1 MHz
Turn-On Delay Time td (on) 45 ID = 23 A
Rise Time tr 380 VGS (on) = 10 V
Turn-Off Delay Time td (off) 320 VDD = 30 V
Fall Time tf 320 RG = 10 Ω
Total Gate Charge QG 101 ID = 45 A
Gate to Source Charge QGS 7VDD = 48 V
Gate to Drain Charge QGD 40 VGS = 10 V
Body Diode Forward Voltage VF (S-D) 1.0 IF = 45 A, VGS = 0
Reverse Recovery Time trr 100 IF = 45 A, VGS = 0
Reverse Recovery Charge Qrr 180 di/dt = 100 A/µs

UNIT

mΩ
mΩ

V
S

µ

A

µ

A
pF
pF
pF

ns
ns
ns

ns
nC
nC
nC

V

ns
nC

Test Circuit 1 Switching Time

D.U.T.

R

G

R

G

= 10 Ω

V

GS

0

t = 1 s

PG.

t

µ

V

V

GS

Wave Form

I

D

Wave Form

GS

10 %

0

I

D

90 %

10 %

0

t

d (on)trtd (off)tf

t

on

90 %

GS (on)

V

90 %

I

D

10 %

t

off

L

R

V

DD

Test Circuit 2 Gate Charge

D.U.T.

G

= 2 mA

I

PG.

50 Ω

Duty Cycle ≤ 1 %

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

R

L

V

DD

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

g

2SK2512

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

C - Case Temperature - ˚C

T

FORWARD BIAS SAFE OPERATING AREA

1000

I

D(pulse)

100

I

D(DC)

R

Limited

DS(on)

200 ms

10

ID - Drain Current - A

DC

PW = 100 s

1 ms

10 ms

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

70

60

50

40

30

20

10

PT - Total Power Dissipation - W

0

40 60 80 100 120 140 160

20

C - Case Temperature - ˚C

T

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

Pulsed

200

VGS = 20 V

VGS = 10 V

µ

100

VGS = 4 V

ID - Drain Current - A

TC = 25 ˚C
Single Pulse

1

0.1

1 10 100

DS - Drain to Source Voltage - V

V

FORWARD TRANSFER CHARACTERISTICS

1 000

100

TA = 125 ˚C

75 ˚C

10

25 ˚C

–25 ˚C

ID - Drain Current - A

1

0

246

GS - Gate to Source Volta

V

Pulsed

VDS = 10 V

e - V

0

1

DS - Drain to Source Voltage - V

V

2

3

4

8

3

- Transient Thermal Resistance - ˚C/W

th(t)

r

1 000

0.01

0.001

100

10

1

0.1

µ µ

10

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

R

R

100

1 m 10 m 100 m 1 10 100 1 000

PW - Pulse Width - s

th(ch-a)

= 62.5 ˚C/W

th(ch-c)

= 3.57 ˚C/W

2SK2512

Single Pulse

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

1000

TA = –25 ˚C

100

25 ˚C
75 ˚C

125 ˚C

10

| - Forward Transfer Admittance - S

fs

1

| y

1

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

10

I

D

- Drain Current - A

80

60

V

DS

= 10 V

Pulsed

100 1000

Pulsed

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

Pulsed

60

ID = 23 A

40

20

- Drain to Source On-State Resistance - mΩ

0

DS(on)

R

GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE

10

V

GS

- Gate to Source Voltage - V

2

20 30

VDS = 10 V
I

D

= 1 mA

40

1

VGS = 4 V

20

- Gate to Source Cutoff Voltage - V

- Drain to Source On-State Resistance - mΩ

DS(on)

R

0

VGS = 10 V

1

ID - Drain Current - A

10 100

GS(off)

V

0

–50

T

0 50 100 150

ch

- Channel Temperature - ˚C

4

2SK2512

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

40

30

VGS = 4 V

20

10

VGS = 10 V

0

–50

RDS(on) - Drain to Source On-State Resistance - mΩ

0

ch - Channel Temperature - ˚C

T

50

100 150

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

100 000

10 000

1 000

D = 23 A

I

VGS = 0
f = 1 MHz

Ciss

Coss

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

100

10

1

0.1

ISD - Diode Forward Current - A

0

0.5

SD - Source to Drain Voltage - V

V

SWITCHING CHARACTERISTICS

1 000

td(off)

100

tf

10

VGS = 0 V

tr

td(on)

1.0

Pulsed

1.5

Ciss, Coss, Crss - Capacitance - pF

100

0.1

1 10 100

DS - Drain to Source Voltage - V

V

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

1 000

100

10

trr - Reverse Recovery time - ns

1

0.1

1.0 10 100

D - Drain Current - A

I

Crss

di/dt = 100 A/ s

GS = 0

V

µ

V

td(on), tr, td(off), tf - Switching Time - ns

1.0

0.1

1.0 10 100

D - Drain Current - A

I

V
RG =10 Ω

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

80

60

40

VDS

VDD = 12 V

30 V
48 V

VGS

20

VDS - Drain to Source Voltage - V

0

40 80 120

g - Gate Charge - nC

Q

DD = 30 V
GS = 10 V

D = 45 A

I

160

16
14
12
10
8
6
4
2

VGS - Gate to Source Voltage - V

0

5

REFERENCE

Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034
Application circuits using Power MOS FET. TEA-1035
Safe operating area of Power MOS FET. TEA-1037

2SK2512

6

[MEMO]

2SK2512

7

2SK2512

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document.
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property rights of third parties by or arising from use of a device described herein or any other liability arising
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copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11

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