Datasheet 2SK2511 Datasheet (NEC)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

The 2SK2511 is N-Channel MOS Field Effect Transistor designed

for high current switching applications.

2SK2511

PACKAGE DIMENSIONS

(in millimeter)

FEATURES

• Super Low On-Resistance

RDS (on)1 = 27 mΩ (VGS = 10 V, ID = 20 A)

DS (on)2 = 40 mΩ (VGS = 4 V, ID = 20 A)

R

• Low Ciss Ciss = 1 210 pF TYP.

• Built-in G-S Protection Diode

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage

Gate to Source Voltage V

Drain Current (DC) ID (DC) ±40 A
Drain Current (pulse)* ID (pulse) ±160 A

Total Power Dissipation (Tc = 25 ˚C) PT1 80 W

Total Power Dissipation (T

Channel Temperature Tch 150 ˚C

Storage Temperature Tstg –55 to +150 ˚C

µ

* PW ≤ 10

s, Duty Cycle ≤ 1 %

A = 25 ˚C) PT2 3.0 W

VDSS 60 V

GSS ±20 V

15.7 MAX.

1.06.0

123

19 MIN. 20.0±0.2

3.0±0.2

5.45 5.45

Gate

Gate Protection
Diode

4

1.0±0.2

MP-88

Drain

Source

3.2±0.2

4.5±0.2

1. Gate

2. Drain

3. Source

4. Fin (Drain)

Body
Diode

4.7 MAX.

1.5

7.0

2.8±0.10.6±0.12.2±0.2

The diode connected between the gate and source of the

transistor serves as a protector against ESD. When this device is

actually used, an additional protection circuit is externally re-

quired if a voltage exceeding the rated voltage may be applied to

this device.

Document No. D10295EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan

©

1995

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

y Cy

2SK2511

CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS

Drain to Source On-Resistance RDS (on)1 22 27 VGS = 10 V, ID = 20 A

Drain to Source On-Resistance RDS (on)2 32 40 VGS = 4 V, ID = 20 A

Gate to Source Cutoff Voltage VGS (off) 1.0 1.5 2.0 VDS = 10 V, ID = 1 mA

Forward Transfer Admittance | yfs | 10 VDS = 10 V, ID = 20 A

Drain Leakage Current IDSS 10 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±10 VGS = ±20 V, VDS = 0

Input Capacitance Ciss 1 210 VDS = 10 V

Output Capacitance Coss 610 VGS = 0

Reverse Transfer Capacitance Crss 270 f = 1 MHz

Turn-On Delay Time td (on) 32 ID = 20 A

Rise Time tr 300 VGS = 10 V

Turn-Off Delay Time td (off) 160 VDD = 30 V

Fall Time tf 220 R

Total Gate Charge QG 50 ID = 40 A

Gate to Source Charge QGS 4.5 VDD = 48 V

Gate to Drain Charge QGD 21 VGS = 10 V

Body Diode Forward Voltage VF (S-D) 1.0 IF = 40 A, VGS = 0

Reverse Recovery Time trr 70 IF = 40 A, VGS = 0

Reverse Recovery Charge Qrr 140 di/dt = 100 A/µs

UNIT

mΩ
mΩ

V

S

µ

A

µ

A

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

nC

= 10 Ω

G

Test Circuit 1 Switching Time

D.U.T.

RG

G = 10 Ω

R

VGS
0

t = 1 s
Dut

PG.

t

µ

cle ≤ 1 %

R

VDD

L

VGS

Wave Form

ID

Wave Form

VGS

10 %

0

ID

90 %

10 %

0

td (on) tr td (off) tf

ton toff

90 %

GS (on)

V

90 %

ID

10 %

Test Circuit 2 Gate Charge

D.U.T.

I

G = 2 mA

PG.

50

Ω

RL

VDD

The application circuits and their parameters are for references only and are not intended for use in actual design-in's.

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

2SK2511

DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA

100

80

60

40

20

dT - Percentage of Rated Power - %

0

20 40 60 80 100 120 140 160

C

- Case Temperature - °C

T

FORWARD BIAS SAFE OPERATING AREA

1000

I

D(pulse)

100

I

D(DC)

Limited

DS(on)

R

10

- Drain Current - A

D

I

TC = 25 °C
Single Pulse

1

0.1

1 10 100

DS

- Drain to Source Voltage - V

V

10ms

DC

PW = 100 s

µ

1ms

TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE

140

120

100

80

60

40

- Total Power Dissipation - W

T

20

P

0

20

40 60 80 100 120 140 160

C

- Case Temperature - °C

T

DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE

200

100

- Drain Current - A

D

I

0

1

DS

- Drain to Source Voltage - V

V

V

GS

= 20 V

2

V

GS

V

3

Pulsed

= 10 V

GS

= 4 V

4

FORWARD TRANSFER CHARACTERISTICS

TA = –25 °C

25 °C
75 °C

100

125 °C

10

- Drain Current - A

D

I

1.0

0

510 15

GS

- Gate to Source Voltage - V

V

Pulsed

VDS = 10 V

3

1 000

2SK2511

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

100

10

1

0.1

0.01

rth(t) - Transient Thermal Resistance - °C/W

0.001
100

µ

FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT

1 000

100

TA = –25 °C

25 °C
75 °C

125 °C

µ

1 m 10 m 100 m 1 10 100 1 000 10

VDS = 10 V
Pulsed

Rth(ch-a) = 41.7 °C/W

Rth(ch-c) = 1.56 °C/W

Single Pulse

PW - Pulse Width - s

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE

Pulsed

60

40

10

| yfs | - Forward Transfer Admittance - S

1

1

10

I

D - Drain Current - A

DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT

80

60

40

VGS = 4 V

20

0

RDS(on) - Drain to Source On-State Resistance - mΩ

VGS = 10 V

1.0

ID - Drain Current - A

10 100

100 1 000

Pulsed

20

0

RDS(on) - Drain to Source On-State Resistance - mΩ

10

V

GS - Gate to Source Voltage - V

GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE

2

1

0

VGS(off) - Gate to Source Cutoff Voltage - V

–50

0 50 100 150

ch - Channel Temperature - °C

T

ID = 20 A

20 30

VDS = 10 V
I

D = 1 mA

4

2SK2511

DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE

80

60

40

20

- Drain to Source On-State Resistance - mΩ

DS(on)

R

0

–50

0

ch

- Channel Temperature - °C

T

50

100 150

CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE

10 000

1 000

- Capacitance - pF

rss

, C

100

oss

, C

iss

C

10

0.1

1 10 100

V

DS

- Drain to Source Voltage - V

VGS = 4 V

VGS = 10 V

D

= 20 A

I

VGS = 0
f = 1 MHz

C

iss

C

oss

C

rss

SOURCE TO DRAIN DIODE
FORWARD VOLTAGE

100

10

1

- Diode Forward Current - A

SD

0.1

I

0

VGS = 0V

0.5

V

SD

- Source to Drain Voltage - V

SWITCHING CHARACTERISTICS

1 000

100

t

f

- Switching Time - ns

f

, t

10

d(off)

, t

r

, t

d(on)

t

1.0

0.1

1.0 10 100

I

D

- Drain Current - A

Pulsed

=30 V

=10 V

1.5

1.0

t

d(on)

t

r

t

d(off)

V

DD

V

GS

R

G

=10 Ω

REVERSE RECOVERY TIME vs.
DRAIN CURRENT

1000

100

10

- Reverse Recovery time - ns

rr

t

1.0

0.1

1.0 10 100

I

D

- Drain Current - A

di/dt =100 A/ s

GS

= 0

V

µ

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

80

60

40

V

DD

= 12 V

30 V

V

48 V

DS

V

GS

20

- Drain to Source Voltage - V

DS

V

0

20 40 60 80

Q

g

- Gate Charge - nC

ID = 40 A

16

14

12

10

8

6

4

- Gate to Source Voltage - V

2

GS

V

0

5

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system. TEI-1202

Quality grade on NEC semiconductor devices. IEI-1209

Semiconductor device mounting technology manual. IEI-1207

Semiconductor device package manual. IEI-1213

Guide to quality assurance for semiconductor devices. MEI-1202

Semiconductor selection guide. MF-1134

Power MOS FET features and application switching power supply. TEA-1034

Application circuits using Power MOS FET. TEA-1035

Safe operating area of Power MOS FET. TEA-1037

2SK2511

6

[MEMO]

2SK2511

7

2SK2511

[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11

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