Datasheet 2SK2503 Datasheet (ROHM) [ru]

2SK2503

Transistors

4V Drive Nch MOS FET

2SK2503

zStructure zExternal dimensions (Unit : mm)
Silicon N-channel MOS FET

zFeatures

1) Low On-resistance.

2) Fast switching speed.

3) Wide SOA (safe operating area).

4) 4V drive.

5) Drive circuits can be simple.

6) Parallel use is easy .

zApplications

Switching

zPackaging specifications

Package
Code

Type

Basic ordering unit (pieces)

2SK2503

zInner circuit

Taping

TL

2500

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Reverse drain
current

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation(Tc=25
Channel temperature
Storage temperature

Pw ≤ 10µs, Duty cycle ≤ 1%

∗

Symbol Limits Unit

60 V

±

20
20

150

−55 to +150

°C

V

DSS

V

GSS

D

∗

I

DP

I

DR

∗

I

DRP

P

)

D

Tch

Tstg

20
5I

5

CPT3

(1)Gate
(2)Drain
(3)Source

(1) Gate
(2) Drain
(3) Source

V
A
A20
A
A

W

°C
°C

0.75

0.9

Abbreviated symbol : K2503

(1)

6.5

5.1

0.9

0.65

2.3

(1)

(2)

2.3

(3)

(2)

2.3

0.5

1.5

5.5

(3)

1.5

2.5

0.8Min.

0.5

1.0

9.5

Rev.A 1/5

Transistors

zElectrical characteristics (Ta=25°C)

Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time

Pw ≤ 300µs, Duty cycle ≤ 1%

∗

Symbol

I

V

(BR)DSS

I

V

R

C
C
C
t

t

GSS

DSS

GS(th)

DS(on)

Y

fs

iss

oss

rss

d(on)

t

r

d(off)

t

f

Typ. Max. Unit Test Conditions

Min.

−

−

60

−

1.0

−

−

−

−

0.11

±100

−

10

2.5

0.135

− 0.17 0.20 I

∗

4.0

−

−

520

−

240

−

100

−

−

−

−

− 5.0 − ID=2.5A, VDD=30Vns

− 20 − VGS=10Vns

− 50 − RL=12Ωns

− 20 − RG=10Ωns

nA V

V

µA

V

Ω

S
pF
pF
pF

GS

= ±20V, VDS=0V

D

=1mA, VGS=0V

I
V

DS

=60V, VGS=0V

DS

=10V, ID=1mA

V

D

=2.5A, VGS=10V

I

D

=2.5A, VGS=4V

I

D

=2.5A, VDS=10V

DS

=10V

V
V

GS

=0V

f=1MHz

2SK2503

Rev.A 2/5

Transistors

zElectrical characteristics curve

50

s

(A)

D

10

5

1

DRAIN CURRENT : I

0.5

0.1

0.5 100502101520

DS(on)

Operation in this area

is limited by R

Tc

=

25°C

Single pulse

DRAIN-SOURCE VOLTAGE : V

Fig.1 Maximum Safe Operating Area

4.0

(V)

GS(th)

3.0

2.0

1.0

GATE THRESHOLD VOLTAGE : V

0

−25 0−50 75 100 125 150

25 25

CHANNEL TEMPERATURE : T

Fig.4 Gate Threshold Voltage

vs. Channel Temperature

0.3

(Ω)

DS(on)

0.2

0.1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0

Fig.7

Static Drain-Source On-State Resistance

50

GATE-SOURCE VOLTAGE : V

vs. Gate-Source Voltage

100µ

1ms

P

W

=10ms

DC Operation

I

2.5A

10

DS

V

=

DS

I

=

1mA

D

ch

(°C)

Ta=25°C
Pulsed

5A

D

=

15

GS

(V)

10V

(V)

10

9
8

(A)

D

7
6
5
4
3

DRAIN CURRENT : I

2
1
0

0

DRAIN-SOURCE VOLTAGE : V

Fig.2 Typical Output Characteristics

10

V

=

10V

GS

Pulsed

5

(Ω)

DS(on)

2
1

Ta=125°C

0.5

0.2

0.1

0.05

0.02

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.01

0.01 5 100.05 0.1 0.5

Fig.5

Static Drain-Source On-State

Fig.5

Resistance vs. Drain Current ( Ι )

0.6

(Ω)

0.5

DS(on)

0.4

0.3

0.2

0.1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

20

0

Fig.8

Static Drain-Source On-State Resistance

75°C
25°C

−25°C

0.02 1 2

DRAIN CURRENT : I

I

D

=

−25−50 25 500 75 100 125 150

CHANNEL TEMPERATURE : Tch (°C)

vs. Channel Temperature

2SK2503

10

V

=

Ta=25

°C

Pulsed

10V

8V
6V
5V

4V

VGS=3V

DS

54321

(V)

(Ω)

DS(on)

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.2

(A)

D

Fig.6

Fig.6

=

10V

V

GS

Pulsed

5A

2.5A

10V

DS

Pulsed

5

Ta=125°C

75°C

2

(A)

D

0.05

DRAIN CURRENT : I

0.02

0.01

25°C

−25°C

1

0.5

0.2

0.1

201 34567

GATE-SOURCE VOLTAGE : V

(V)

GS

Fig.3 Typical Transfer Characteristics

10

V

=

4V

GS

Pulsed

5

2

Ta=125°C

1

0.5

0.2

0.1

0.05

0.02

0.01

75°C
25°C

−25°C

0.1 0.2 0.50.01 0.02 0.05

DRAIN CURRENT : I

1.0 2.0 5.0

(A)

D

Static Drain-Source On-State

Resistance vs. Drain Current ( ΙΙ )

100

V

=

10V

DS

(S)

Pulsed

50

fS

20

10

0.5

0.2

0.1

FORWARD TRANSFER ADMITTANCE : Y

5

2

1

Ta= −25°C

25°C
75°C

125°C

0.1 0.2 0.50.01 0.02 0.05

DRAIN CURRENT : I

1 2.0 5.0

(A)

D

Fig.9 Forward Transfer Admittance
vs. Drain Current

8

10.0

10

Rev.A 3/5

Transistors

10

VGS=0V

(A)

Pulsed

5

DR

Ta=125°C

75°C

2

25°C

−25°C

1

0.5

0.2

0.1

REVERSE DRAIN CURRENT : I

0.05
0 0.5 1.0 1.5

SOURCE-DRAIN VOLTAGE : V

Fig.10 Reverse Drain Current
vs. Source-Drain Voltage ( Ι )

1000

500

200

(ns)

100

50

20
10

SWITCHING TIME : t

5

2

0.10.05 0.2 0.5 1 2 5 10

DRAIN CURRENT : I

td(off)

tf
tr

td(on)

D

(A)

Fig.13 Switching characteristics

(See Figures 16 and 17 for

the measurement circuit and
resultant waveforms)

10

(V)

SD

Ta=25°C

DD

=30V

V

GS

=10V

V

G

=10Ω

R
Pulsed

5

(A)

DR

2

VGS=10V 0V

1

0.5

0.2

0.1

0.05

REVERSE DRAIN CURRENT : I

0.02

0.01
0 1.0 1.5

0.5

SOURCE-DRAIN VOLTAGE : V

Fig.11 Reverse Drain Current
vs. Source-Drain Voltage ( ΙΙ )

1000

Ta=25°C
di/dt=50A/µs

500

GS

=0V

V
Pulsed

100

50

REVERSE RECOVERY TIME : trr (ns)

10

0.2 0.5

0.1

REVERSE DRAIN CURRENT : I

Fig.14 Reverse Recovery Time

vs. Reverse Drain Current

Ta=25°C

Pulsed

(V)

SD

12 51

0

DR

(A)

2SK2503

10000

5000

2000

(pF)

1000

500

200
100

CAPACITANCE : C

50

20
10

0.1 0.2 0.5 1 2 5 10 20 50 100

DRAIN-SOURCE VOLTAGE : V

Fig.12 Typical Capacitance
vs. Drain-Source Voltage

Ta=25

V

Pulsed

C

iss

C

oss

C

rss

f=1MHz

=

0V

GS

(V)

DS

°C

( t )

D=1

: r

1

0.5

0.2

0.1

0.1

0.05

0.02

0.01

NORMALIZED TRANSIENT

0.01

THERMAL RESISTANCE

Single pulse

0.001
10µ

100

µ 1m 10m

PULSE WIDTH : PW

Tc=25°C

θ

(t)=r (t) θ

th(ch-c)

θ

=

6.25

°C/W

th(ch-c)

PW

T

100

m 1 10

(s)

D=

th (ch-c)

T

PW

Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width

Rev.A 4/5

Transistors

zSwitching characteristics measurement circuit

2SK2503

Pulse Width

V

GS

R

G

D.U.T.

I

D

R

V

Fig.15 Switching Time Test Circuit

L

DD

V

DS

V

V

50%

GS

10%

DS

10%

90%

t

t

d(on)

r

t

on

Fig.16 Switching Time Waveforms

90%

t

d(off)

50%

10%

90%

t

f

t

off

Rev.A 5/5

Appendix

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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

Notes

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1