Datasheet 2SK2198 Datasheet (Shindengen)

SHINDENGEN

VX-2 Series Power MOSFET

2SK2198

(F30Z50VX2)

500V 30A

FEATURES

●Input capacitance (Ciss) is small.

Especially, input capacitance
at 0 biass is small.

●The static Rds(on) is small.

●The switching time is fast.

APPLICATION

●Switching power supply of AC 100V input

●High voltage power supply

●Inverter

N-Channel Enhancement type

OUTLINE DIMENSIONS

Case : E-pack

Case : MTO-3L

(Unit : mm)

RATINGS

●Absolute Maximum Ratings （Tc = 25℃）

Item Symbol Conditions Ratings Unit

Storage Temperature
Channel Temperature
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current（DC）
Continuous Drain Current（Peak)
Continuous Source Current（DC）
Total Power Dissipation
Single Pulse Avalanche Current
Mounting Torque

T

T

V

DSS

V

GSS

I

I

DP

I

P

I

AS

TOR

stg

ch

D

S

T

ch

T

= 25℃

（ Recommended torque : 0.5N･m ）

-55～150 ℃
150
500 V

±30

30
90 A
30

220 W

30 A

0.8 N・m

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

VX-2 Series Power MOSFET

●Electrical Characteristics Tc = 25℃

Item Symbol Conditions Min. Typ. Max. Unit

(BR)DSSID

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward Tranｓconductance
Static Drain-Source On-ｓtate Resistance
Gate Threshold Voltage
Source-Drain Diode Forwade Voltage
Theｒmal Resistance
Total Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Time
Turn-Off Time

V

I

DSS

I

GSS

fs

g

DS(ON)ID

R

THID

V

SDIS

V

θjc

Q

g

C

iss

rss

C

oss

C

on

t

off

t

2SK2198 ( F30Z50VX2 )

= 1mA, VGS = 0V

VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
ID = 15A, VDS = 10V

= 15A, VGS = 10V

= 3mA, VDS = 10V

= 15A, VGS = 0V

junction to case
VDD = 400V, VGS = 10V, ID = 30A

VDS = 10V, VGS = 0V, f = 1MH

ID = 15A, VGS = 10V, RL = 10Ω

Z

500 V

250 μA

±0.1

920 S

0.160.23 Ω

2.5 3.0 3.5 V

1.5

0.568 ℃/Ｗ

125 nC

3700

230 pF
770
200 375 ns
500 900

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

2SK2198 Transfer Characteristics

60

Tc = −55°C

50

40

[A]

D

30

20

Drain Current I

10

0

0 5 10 15 20

25°C

100°C

150°C

VDS = 25V
pulse test

TYP

Gate-Source Voltage VGS [V]

2SK2198

1

[Ω]

DS(ON)

0.1

Static Drain-Source On-state Resistance

ID = 15A

Static Drain-Source On-state Resistance R

0.01

-50 0 50 100 150

Case Temperature Tc [°C]

VGS = 10V
pulse test

TYP

[V]

TH

2SK2198

5

4

3

2

Gate Threshold Voltage

Gate Threshold Voltage V

1

0

-50 0 50 100 150

Case Temperature Tc [°C]

VDS = 10V
ID = 3mA
TYP

100

2SK2198

Safe Operating Area

100µs

10

[A]

D

R

DS(ON)

limit

Drain Current I

1

Tc = 25°C

Single Pulse

0.1
1 10 100 1000

200µs

1ms

10ms

DC

Drain-Source Voltage VDS [V]

1

10

0

10

-1

10

Transient Thermal Impedance

2SK2198

10

1

0.1

0.01

Time t [s]

-2

10

-3

10

-4

10

Transient Thermal Impedance θjc(t) [°C/W]

0.001

10000

0.005

Tc=25°C

TYP

Ciss

Coss

Crss

Drain-Source Voltage VDS [V]

1000

2SK2198

Capacitance

100

Capacitance Ciss Coss Crss [pF]

10

0 20 40 60 80 100

2SK2198 Power Derating

100

80

60

40

Power Derating [%]

20

0

0 50 100 150

Case Temperature Tc [°C]

2SK2198

Gate Charge Characteristics

500

400

[V]

DS

V

300

200

Drain-Source Voltage V

100

DS

VDD = 400V

200V

100V

V

20

15

[V]

GS

10

GS

5

Gate-Source Voltage V

ID = 30A

0

0 50 100 150 200

Gate Charge Qg [nC]

0