Datasheet 2SC5420 Datasheet (SANYO)

2SC5420

Ordering number : EN5762

Inverter Lighting Applications

NPN Triple Diffused Planar Silicon Transistor

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN

O1397TS (KOTO) TA-1037 No.5762-1/4

Package Dimensions

unit: mm

2069B-SMP-FD

[2SC5420]

SANYO : SMP-FD

1 : Base
2 : Collector
3 : Emitter

10.2

2.55

2.55

1.2

1.3

4.5

1

2

3

8.83.0

1.2

0.8

2.7

0.4

Specifications
Absolute Maximum Ratings

at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage V

CBO

1000 V

Collector-to-Emitter Voltage V

CEO

450 V

Emitter-to-Base Voltage V

EBO

9V

Collector Current I

C

5A

Collector Current (Pulse) I

CP

10 A

Collector Dissipation P

C

1.75 W

Tc=25°C 50 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg –55 to +150 °C

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Ratings

min typ max

Unit

Collector Cutoff Current I

CBO

VCB=450V, IE=0 10 µA
Collector Cutoff Current I

CES

VCE=1000V, RBE=0 1.0 mA
Collector Sustain Voltage V

CEO(SUS)IC

=100mA, IB=0 450 V

Emitter Cutoff Current I

EBO

VEB=9V, IC=0 1.0 mA
C-E Saturation Voltage V

CE(sat)

IC=2.5A, IB=0.5A 1.0 V
B-E Saturation Voltage V

BE(sat)

IC=2.5A, IB=0.5A 1.5 V
DC Current Gain h

FE(1)

VCE=5V, IC=0.3A 30 40 50

h

FE(2)

VCE=5V, IC=2.0A 10
Storage Time t

stg

IC=2.5A, IB1=0.5A, IB2=–1.0A 2.5 µs
Fall Time t

f

IC=2.5A, IB1=0.5A, IB2=–1.0A 0.15 µs

Features

• High breakdown voltage (V

CBO

=1000V).

• High reliability (Adoption of HVP process).

• Adoption of MBIT process.

Switching Time Test Circuit

2SC5420

No.5762-2/4

I

B1

I

B2

V

OUT

R

C

V

CC

I

B1

0.1V

OUT

I

B2

V

OUT

t

stgtf

0.9 V

OUT

0 2 4 6 8 10

0

0 0.2 0.4 0.6 1.00.8 1.41.2

1

2

3

4

6

5

DC Current Gain, h

FE

Collector Current,I

C

– A

Collector Current,I

C

– A

Collector Current, I

C

– A

h

FE

– I

C

I

B

=

0

Collector-to-Emitter Voltage, V

CE

– V

Collector Current,I

C

– A

I

C

– V

CE

Collector Current, I

C

– A

I

C

– V

BE

V

CE(sat

)

– I

C

Collector Current,I

C

– A

Base-to-Emitter Voltage, V

BE

– V

Collector-to-Emitter Saturation Voltage, V

CE(sat)

– V

Base-to-Emitter Saturation Voltage, V

CE(sat)

– V

Switching Time, SW Time – µs

SW Time – I

C

VCE=5V

VCE=5V

VCC=200V
I

C/IB1

=

5

I

B2/IB1

=2

R

load

I

C

/

IB=5

I

C

/

IB=5

Ta=120°C

25°C

–40°C

25°C

–40°C

25°C

120°C

Ta

=

–40°C

25°C

120°C

Ta

=

–40°C

Ta=120°C

t

f

t

stg

1.0A

0.8A

0.6A

0.4A

0.2A

2.0A

1.8A

1.6A

1.4A

1.2A

0

2

4

6

8

10

2

3

5

7

2

2

3

5

5

7

7

0.1

0.1 1.0 10

1.0

10

3 5 72 3 5 73 5 7

10

2 2

0.1 1.0

3 5 7 3 5 7 3 5 7

2

3

5

7

2

3

5

5

7

7

1.0

10

100

V

BE(sat

)

– I

C

2

3

5

2

0.1

0.1 1.0 10

1.0

2

3

5

7

3 5 72 3 5 73 5 7

2

3

5

7

2

2

3

5

5

7

7

0.1

0.1 1.0 10

1.0

10

3 5 72 3 5 77

2SC5420

No.5762-3/4

Collector-to-Emitter Voltage, V

CE

– V

Forward Bias ASO

Tc=25°C
1Pulse

Collector Current,I

C

– A

I

C

I

CP

100µs

300µs

1ms

10ms

DC operation

Base Current, I

B2

– A

Switching Time, SW Time – µs

SW Time – I

B2

VCC=200V
I

C

=

2.5A

I

B1

=0.5A

R

load

t

f

t

stg

2

3

5

7

2

2 2

3

5

5

0.1

0.1 1.0

1.0

10

7

7

7 3 5 7 3 5

2

3

5

7

2

3

5

7

2

3

2

3

5

7

0.1

10 100

1.0

10

2 3 5 7 2 3 5 7 2 3 5 7

PT<50µs

Collector Current,I

C

– A

Collector-to-Emitter, V

CE

– V

Reverse Bias ASO

Collector Dissipation, P

C

– W

Collector Dissipation, P

C

– W

Ambient Temperature, Ta – °C

Case Temperature, Tc – °C

P

C

– Ta

P

C

– Tc

2

3

5

7

0.1
100 1000

1.0

10

2

3

5

7

2

3

5 7 2 3 5 7 2 3

0

0 20 40 60 10080 160140120

0.4

0.8

1.2

1.6

1.75

2.0

0

0 20 40 60 10080 160140120

10

20

30

50

40

60

L=200µH
IB2=–1A
Tc=25°C
1 pulse

No heat sink

2SC5420

No.5762-4/4

No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property lose.

Anyone purchasing any products described or contained herein for an above-mentioned use shall:

Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or

litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant­eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.

This catalog provides information as of October, 1997. Specifications and information herein are subject

to change without notice.