Datasheet 2SC5416 Datasheet (SANYO)

2SC5416

Ordering number : EN5696

Inverter Lighting Applications

NPN Triple Diffused Planar Silicon Transistor

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

51598TS (KOTO) TA-1059 No.5696-1/4

Package Dimensions

unit: mm

2079B-TO220FI (LS)

[2SC5416]

SANYO : TO220FI (LS)

1 : Base
2 : Collector
3 : Emitter

3.5

7.2

16.0

16.1

3.6

10.0

0.9

1.2

14.0

0.75

4.5

2.8

0.6

0.7

2.4

2.552.55

123

3.2

Specifications
Absolute Maximum Ratings

at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage V

CBO

1000 V

Collector-to-Emitter Voltage V

CEO

450 V

Emitter-to-Base Voltage V

EBO

9V

Collector Current I

C

4A

Collector Current (Pulse) I

CP

8A

Collector Dissipation P

C

2W

Tc=25°C 25 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg –55 to +150 °C

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Ratings

min typ max

Unit

Collector Cutoff Current I

CBO

VCB=450V, IE=0 10 µA
Collector Cutoff Current I

CES

VCE=1000V, RBE=0 1.0 mA
Collector Sustain Voltage V

CEO(sus)IC

=100mA, IB=0 450 V

Emitter Cutoff Current I

EBO

VEB=9V, IC=0 1.0 mA
C-E Saturation Voltage V

CE(sat)

IC=2A, IB=0.4A 1.0 V
B-E Saturation Voltage V

BE(sat)

IC=2A, IB=0.4A 1.5 V
DC Current Gain h

FE(1)

VCE=5V, IC=0.1A 30 40 50

h

FE(2)

VCE=5V, IC=1.5A 10
Storage Time t

stg

IC=2A, IB1=0.4A, IB2=–0.8A 2.5 µs
Fall Time t

f

IC=2A, IB1=0.4A, IB2=–0.8A 0.15 µs

Features

• High breakdown voltage.

• High reliability (Adoption of HVP process).

• Adoption of MBIT process.

Switching Time Test Circuit

2SC5416

No.5696-2/4

I

B1

I

B2

V

OUT

R

C

V

CC

I

B1

0.1 V

OUT

I

B2

V

OUT

t

stg

t

f

0.9 V

OUT

DC Current Gain, h

FE

Collector Current,I

C

– A

Collector Current, I

C

– A

h

FE

– I

C

Collector-to-Emitter Voltage, V

CE

– V

I

C

– V

CE

Collector Current, I

C

– A

I

C

– V

BE

V

CE(sat

)

– I

C

Collector Current,I

C

– A

Collector Current,I

C

– A

Base-to-Emitter Voltage, V

BE

– V

Collector-to-Emitter Saturation Voltage, V

CE(sat)

– V

V

BE(sat

)

– I

C

Collector Current,I

C

– A

Base-to-Emitter Saturation Voltage, V

BE(sat)

– V

Switching Time, SW Time

– µs

SW Time – I

C

0

0 1 2 3 4 5 6 7 8 9 10

1

2

3

5

4

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

1

2

3

5

4

1.0

0.01 0.1 1.0

10

7

2

3

5

100

7

2

3

5

7

2 3 5 7 2 3 5 2 3 57 7

0.01 0.1 1.0

7 2 3 5 7 2 3 5 2 3 57 7

0.01 0.1 1.0

7 2 3 5 7 2 3 5 2 3 57 7

1.0

10

2

3

5

2

3

5

7

7

0.1

2

3

0.01

5

7

0.1

1.0

2

3

5

2

3

5

7

10

7

0.1 1.0

7 2 3 5 7 2 3 5 7

1.0

10

2

3

5

5

2

3

5

7

7

0.1
7

I

B

=

0

VCE=5V

VCC=200V
I

C/IB1

=

5

I

B2/IB1

=2

R

load

Ta=120°C

25°C

–

40°C

25°C

–40°C

–40°C

25°C

Ta=120°C

Ta=120°C

t

f

t

stg

2.0A

0.2A

0.4A

0.6A

0.8A

1.0A

1.2A

0.05A

0.1A

1.4A

VCE=5V

I

C

/

IB=5

I

C

/

IB=5

120°C

Ta

=

–40°C

25°C

1.8A

1.6A

2SC5416

No.5696-3/4

Collector-to-Emitter Voltage, V

CE

– V

Switching Time, SW Time – µs

Forward Bias ASO

Collector Current,I

C

– A

0.1 1.0

7 2 3 5 7 2 3 5

1.0

2

3

5

5

7

10

2

3

5

7

0.1
7

10 100

0.01
5

7

0.1

2

3

5

2

3

5

2

2

3

5

7

1.0
7

10

7

5 7 2 3 5 7

1000

2 32 3 5 7

Base Current, I

B2

– A

SW Time – I

B2

PT<50µs

VCC=200V
I

C

=

2A

I

B1

=0.4A

R

load

t

f

t

stg

I

C

I

CP

100µs

300µs

1ms

10ms

DC operation

Tc=25°C
1Pulse

Collector Dissipation, P

C

– W

Collector Dissipation, P

C

– W

80 100 120 140 1606040200

80 100 120 140 1606040200

0

10

20

25

30

0

1

2

3

Ambient Temperature, Ta – °C

Case Temperature, Tc – °C

P

C

– Ta

P

C

– Tc

0.1

2

3

5

1.0
7

2

3

5

10

7

100

5 7

1000

2 3 5 2 37

Collector-to-Emitter, V

CE

– V

Reverse Bias ASO

Collector Current,I

C

– A

No heat sink

L=200µH
IB2=–1A
Tc=25°C
1 pulse

2SC5416

No.5696-4/4

No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.

Anyone purchasing any products described or contained herein for an above-mentioned use shall:

Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or

litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant­eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.

This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.