PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5409
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE HIGH-GAIN AMPLIFICATION
FEATURE
PACKAGE DIMENSIONS (in mm)
• High fT
16 GHz TYP.
• High gain
2
21e|
= 14 dB TYP.
|S
@f = 2 GHz, VCE = 2 V, IC = 20 mA
• NF = 1.1 dB, @f = 2 GHz V
CE = 2 V, IC = 3 mA
• 6-pin Small Mini Mold Package
ORDERING INFORMATION
PART NUMBER QUANTITY PACKING STYLE
2SC5409-T1 3 kpcs/reel 8-mm wide emboss taping, 6-pin
(collector) feed hole direction
Remark To order evaluation samples, consult your NEC sales person-
nel (supported in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS
PIN CONNECTIONS
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 5V
Collector to Emitter Voltage VCEO 3V
Emitter to Base Voltage VEBO 2V
Collector Current IC 30 mA
Total Power Dissipation PT 90 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg –65 to +150 °C
E: Emitter
C: Collector
B: Base
1.3
2.0±0.2
0.650.65
0.7
0.9±0.1
2.1±0.1
1.25±0.1
T97
EE
B
0 to 0.1
CEE
+0.1
0.2
+0.1
0.15
–0
–0
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
Document No. P12096EJ1V0DS00 (1st edition)
Date Published April 1997 N
Printed in Japan
©
1997
2SC5409
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 0.1
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 0.1
DC Current Gain hFE VCE = 2 V, IC = 20 mA
Gain Bandwidth Product fT VCE = 2 V, IC = 20 mA, f = 2.0 GHz 13 16 GHz
Feed-back Capacitance Cre VCB = 2 V, IE = 0, f = 1 MHz
Insertion Power Gain |S21e|
2
VCE = 2 V, IC = 20 mA, f = 2.0 GHz 12 14 dB
Noise Figure NF VCE = 2 V, IC = 3 mA, f = 2.0 GHz 1.1 1.8 dB
Rank FB
Marking T97
hFE 70 to 140
Notes 1. Pulse measurement PW ≤ 350 µs, duty cycle ≤ 2 %, pulsed
2. Measured with three-pin bridge, with emitter pin connected to the bridge guard.
Note 1
Note 2
70 140
0.2 0.3 pF
µ
A
µ
A
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
200
Free Air
100
90 mW
- Total Power Dissipation - mW
T
P
0
50
A
- Ambient Temperature - °C
T
100 150
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
25
20
15
10
- Collector Current - mA
C
I
5
0
1.0 2.0 3.0
µ
200 A
180 A
µ
160 A
µ
µ
140 A
µ
120 A
µ
100 A
µ
80 A
µ
60 A
µ
40 A
I
B =
20 A
µ
VCE - Collector to Emitter Voltage - V
2
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
50
V
CE =
2 V
40
30
20
- Collector Current - mA
C
I
10
0
BE
- Base to Emitter Voltage - V
V
DC CURRENT GAIN vs.
500
COLLECTOR CURRENT
200
100
50
- DC Current Gain
FE
h
20
10
1
2 5 10 20 50 100
I
C
- Collector Current - mA
0.5 1.0
V
CE =
2 V
V
CE =
1 V
20
q
T
vs. IC characteristics
f
VCE = 2 V
f = 2 GHz
18
16
14
12
|S
21e
|2 vs. IC characteristics
2SC5409
VCE = 2 V
f = 2 GHz
10
10
8
6
- Insertion Power Gain - dB
2
|
4
- Gain Bandwidth Product - GHz
T
f
21e
|S
2
0.5
0
C
- Collector Current - mA
I
re
vs. V
CB
C
f = 1 MHz
0
1 10 100 1 10 100
I
C
- Collector Current - mA
C
characteristics
NF vs. I
4
VCE = 2 V
f = 2 GHz
0.4
3
0.3
2
0.2
NF - Noise Figure - dB
1
- Feed-back Capacitance - pF
0.1
re
C
0
110
C
- Collector Current - mA V
I
40
30
20
- Insertion Power Gain - dB
2
|
10
21e
|S
0
0.1 0.5 1.0 2.0 2.6
100 1 10 100
|S
21e
|2 vs. f characteristics
0
CB
- Collector to Base Voltage - V
VCE = 2 V
I
C
= 20 mA
C
= 3 mA
I
f - Fre
uency - GHz
3
S PARAMETER
VCE = 2 V IC = 3 mA
FREQUENCY S 11 S21 S12 S22
MHz MAG ANG MAG ANG MAG ANG MAG ANG
100.000 0.907 –11.3 7.343 170.3 0.013 81.4 0.977 –7.0
200.000 0.887 –22.7 7.221 161.1 0.026 73.9 0.960 –13.9
300.000 0.861 –33.6 6.963 152.8 0.034 66.4 0.929 –20.6
400.000 0.826 –45.1 6.563 143.9 0.045 62.4 0.894 –27.1
500.000 0.788 –54.5 6.506 134.8 0.053 55.1 0.860 –33.3
600.000 0.740 –65.4 6.264 128.6 0.062 50.1 0.815 –38.4
700.000 0.700 –75.2 5.775 120.4 0.067 44.8 0.772 –43.2
800.000 0.659 –84.6 5.644 113.8 0.073 41.1 0.734 –48.1
900.000 0.621 –94.5 5.314 108.4 0.076 35.9 0.691 –51.9
1 000.000 0.585 –103.3 4.924 101.7 0.078 33.6 0.658 –56.1
1 100.000 0.555 –112.1 4.705 95.6 0.080 29.9 0.621 –59.8
1 200.000 0.532 –121.0 4.442 90.9 0.083 27.3 0.592 –63.0
1 300.000 0.508 –129.0 4.230 85.7 0.083 24.7 0.565 –66.2
1 400.000 0.492 –137.3 3.978 81.1 0.083 23.6 0.545 –69.7
1 500.000 0.483 –145.3 3.795 76.4 0.083 21.8 0.522 –72.7
1 600.000 0.473 –153.1 3.615 72.9 0.083 19.9 0.504 –75.9
1 700.000 0.472 –160.0 3.372 69.1 0.083 19.7 0.490 –79.1
1 800.000 0.469 –167.1 3.237 63.7 0.084 17.4 0.476 –82.5
1 900.000 0.469 –173.9 3.106 60.8 0.082 16.3 0.461 –85.7
2 000.000 0.472 179.9 2.932 56.9 0.083 17.0 0.456 –89.2
2 100.000 0.479 173.9 2.825 52.9 0.084 16.1 0.446 –92.3
2 200.000 0.482 168.5 2.706 49.4 0.083 15.3 0.438 –96.1
2 300.000 0.495 163.1 2.607 46.0 0.082 14.5 0.435 –99.5
2 400.000 0.504 157.8 2.479 42.3 0.083 15.0 0.432 –103.7
2 500.000 0.512 153.7 2.403 37.4 0.080 14.7 0.429 –106.9
2 600.000 0.523 148.9 2.361 34.8 0.082 15.4 0.428 –110.8
2SC5409
VCE = 2 V IC = 20 mA
FREQUENCY S 11 S21 S12 S22
MHz MAG ANG MAG ANG MAG ANG MAG ANG
100.000 0.591 –30.8 33.233 157.5 0.010 76.4 0.877 –17.3
200.000 0.530 –58.2 28.692 139.8 0.018 65.2 0.773 –31.4
300.000 0.475 –80.8 24.362 126.3 0.024 59.7 0.666 –41.4
400.000 0.428 –100.1 20.644 115.9 0.028 54.2 0.573 –49.6
500.000 0.400 –115.3 17.561 107.9 0.032 51.9 0.504 –55.1
600.000 0.380 –128.9 15.258 101.2 0.035 51.0 0.446 –59.4
700.000 0.368 –140.5 13.430 95.6 0.038 50.1 0.403 –62.8
800.000 0.361 –150.7 11.977 90.7 0.040 49.1 0.369 –66.2
900.000 0.359 –159.9 10.742 86.1 0.043 49.4 0.339 –68.9
1 000.000 0.359 –167.9 9.780 82.1 0.046 49.5 0.319 –72.1
1 100.000 0.362 –174.9 8.924 78.4 0.049 48.7 0.297 –75.2
1 200.000 0.368 178.6 8.211 74.9 0.051 48.9 0.281 –77.9
1 300.000 0.373 172.9 7.608 71.4 0.054 48.8 0.268 –81.0
1 400.000 0.381 167.3 7.103 68.3 0.058 48.6 0.260 –84.7
1 500.000 0.392 162.4 6.621 65.1 0.060 48.1 0.248 –87.9
1 600.000 0.401 157.7 6.229 61.9 0.064 47.6 0.242 –91.9
1 700.000 0.410 153.9 5.884 59.2 0.067 47.2 0.239 –95.6
1 800.000 0.422 150.0 5.555 56.0 0.070 46.4 0.234 –99.9
1 900.000 0.431 146.1 5.256 53.0 0.073 45.9 0.230 –104.0
2 000.000 0.442 142.8 4.992 50.1 0.075 45.0 0.234 –108.7
2 100.000 0.455 139.7 4.755 47.3 0.078 44.3 0.232 –112.7
2 200.000 0.466 136.5 4.540 44.6 0.082 43.6 0.233 –118.4
2 300.000 0.480 134.0 4.335 41.7 0.084 42.8 0.238 –122.5
2 400.000 0.492 131.1 4.139 38.9 0.087 41.7 0.243 –128.0
2 500.000 0.502 128.6 3.972 36.1 0.090 40.6 0.244 –132.0
2 600.000 0.516 126.0 3.796 33.2 0.093 39.7 0.252 –136.4
4
[MEMO]
2SC5409
5
[MEMO]
2SC5409
6
[MEMO]
2SC5409
7
2SC5409
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
2
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