Page 1
2SC5390
Silicon NPN Epitaxial
High Frequency Amplifier
Features
• Excellent high frequency characteristics
fT = 1.4GHz (typ.)
• Low output capacitance
Cob = 2.4 pF (typ.)
• Isolated package
TO–126FM
ADE-208-492 (Z)
1st. Edition
December. 1996
Outline
TO–126FM
1
2
3
1. Emitter
2. Collector
3. Base
Page 2
2SC5390
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation P
Collector power dissipation PC*
CBO
CEO
EBO
C
c(peak)
C
1
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Collector to base breakdown
voltage
Collector to emitter
breakdown voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
Base to emitter voltage V
Collector to emitter saturation
voltage
Gain bandwidth product f
Collector Output capacitance C
V
(BR)CBO
V
(BR)CEO
CBO
EBO
FE
BE
V
CE(sat)
T
ob
110 — — V IC = 10É A, IE = 0
110 — — V IC = 1mA, RBE = ∞
——10µAV
——10µAV
30 — 100 VCE = 10 V, IC = 10mA
——1 V V
——1 V I
1.0 1.4 — GHz VCE = 10 V, IC = 50mA
— 2.4 3.5 pF VCB = 30V, I
110 V
110 V
3V
200 mA
400 mA
1.4 W
7W
= 100V, IE = 0
CB
= 3V, IC = 0
E B
= 10 V, IC = 10mA
CE
= 200mA, IB = 20mA
C
= 0
E
f = 1MHz
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Main Characteristics
Collector Power Dissipation
8
6
4
2
Collector Power Dissipation Pc (W)
0
Ambient Temperature Ta (°C)
vs. Temperature
Tc
Ta
50 100 150 200
Case Temperature Tc (°C)
2SC5390
1000
ic(peak)
300
I max
100
C
30
10
3
Collector Current I (mA)
1
1 3 10 30 100 300 1000
Collector to Emitter Voltage VCE (V)
Areaof Safe Operaion
C
(Tc = 25°C)
1 shot pulse
Ta = 25 °C
PW = 1 ms
10 ms
DC Operation
Typical Output Characteristics
C
200
100
10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
500
FE
200
100
1 mA
Collector Current I (mA)
Ta = 25 °C
Pulse Test
I = 0
B
DC Current Transfer Ratio h
0510
Collector to Emitter Voltage V
CE
(V)
DC Current Transfer Ratio vs.
Collector Current
25 °C
50
Ta = –25 °C
20
10
V = 10 V
CE
Pulse Test
5
1
51020 502
Collector Current IC (mA)
75 °C
100 200
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2SC5390
Collector to Emitter Saturation Voltage
vs. Collector Current
1
I / I = 10
C B
0.5
Pulse Test
CE(sat)
V (V)
0.2
Ta = –25 °C
25 °C
0.1
0.05
75 °C
0.02
Collector to Emitter Saturation Voltage
0.01
1
550
10 20 100 2002
Collector Current IC (mA)
Gain Bandwidth vs. Collector Current
5
Base to Emitter Saturation Voltage
vs. Collector Current
5
2
BE(sat)
V (V)
1
0.5
Ta = –25 °C
75 °C
25 °C
0.2
Base to Emitter Saturation Voltage
0.1
1
Collector Current I
10 20 100 20025 50
(mA)
C
Collctor Output Capacitance vs.
Collector to Base Voltage
10
I / I = 10
C B
Pulse Test
2
T
1
0.5
Gain Bandwidth f (MHz)
0.2
0.1
1
10 20 100 20025 50
Collector Current I
V = 10 V
CE
Pulse Test
(mA)
C
5
2
1
0.5
0.2
I = 0 ,
E
f = 1MHz
0.1
Collector Output Capacintace Cob (pF)
1
2 5 10 20 50 100
Collector to Base Voltage V
CB
(V)
Page 5
Package Dimentions
8.0 ± 0.4
1.0
6.0
φ
3.2
3.2 ± 0.4
+0.15
–0.1
2SC5390
Unit: mm
11.0 ± 0.515.6 ± 0.5
0.65
2.29 ± 0.5
1.9 Max 3.5
0.7
2.29 ± 0.5
1.7
Hitachi Code
EIAJ
JEDEC
TO–126FM
—
—
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Cautions
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received the latest product standards or specifications before final design, purchase or use.
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quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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