Page 1
Transistor
5.9±0.2
2.54±0.15
0.7±0.1
4.9±0.2
8.6±0.2
0.7
+0.3
–0.2
13.5±0.53.2
0.45
+0.2
–0.1
1.271.27
0.45
+0.2
–0.1
132
2SA683, 2SA684
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC1383 and 2SC1384
Features
■
●
Complementary pair with 2SC1383 and 2SC1384.
●
Allowing supply with the radial taping.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SA683
2SA684
2SA683
2SA684
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
Rank classification
FE1
Rank Q R S
h
FE1
85 ~ 170 120 ~ 240 170 ~ 340
2SA683
2SA684
2SA683
2SA684
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
*
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Ratings
–30
–60
–25
–50
–5
–1.5
–1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –500mA
VCE = –5V, IC = –1A
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–30
–60
–25
–50
–5
85
50
typ
– 0.2
– 0.85
200
20
Unit: mm
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
max
– 0.1
Unit
µA
340
– 0.4
–1.2
MHz
30
pF
V
V
V
V
V
1
Page 2
Transistor 2SA683, 2SA684
PC—Ta IC—V
1.2
)
W
(
1.0
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
CE(sat)—IC
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
– 0.03
Ta=75˚C
25˚C
–25˚C
– 0.1 –1 –10
– 0.3 –3
Collector current IC (A
)
IC/IB=10
)
CE
–1.5
–1.25
)
A
(
–1
C
– 0.75
– 0.5
Collector current I
– 0.25
0
0 –10–8–2 –6–4
Ta=25˚C
IB=–10mA
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
Collector to emitter voltage VCE (V
V
BE(sat)—IC
–100
)
)
V
V
(
(
–30
BE(sat)
BE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
Base to emitter saturation voltage V
– 0.01
– 0.01
Ta=–25˚C
75˚C
– 0.1 –1 –10
– 0.03
Collector current IC (A
Collector current IC (A
– 0.3 –3
IC/IB=10
25˚C
)
)
–1.2
VCE=–10V
Ta=25˚C
–1.0
)
mA
(
– 0.8
C
– 0.6
– 0.4
Collector current I
– 0.2
0
0 –12–10–8–2 –6–4
)
Base current IB (mA
hFE—I
–600
FE
–500
–400
Ta=75˚C
–300
–200
–100
Forward current transfer ratio h
25˚C
–25˚C
0
– 0.01
– 0.1 –1 –10
– 0.03
Collector current IC (A
IC—I
B
– 0.3 –3
)
C
VCE=–10V
)
fT—I
200
VCB=–10V
Ta=25˚C
180
)
160
MHz
(
140
T
120
100
80
60
40
Transition frequency f
20
0
1 3 10 30 100
Emitter current IE (mA
2
E
50
)
45
pF
(
40
ob
35
30
25
20
15
10
5
Collector output capacitance C
0
–1 –3 –10 –30 –100
)
Collector to base voltage VCB (V
Cob—V
CB
IE=0
f=1MHz
Ta=25˚C
–120
)
V
(
–100
CER
–80
–60
–40
–20
Collector to emitter voltage V
)
Base to emitter resistance RBE (kΩ
V
CER—RBE
IC=–10mA
Ta=25˚C
2SA684
2SA683
0
0.1 1 10 1000.3 3 30
)
Page 3
Transistor 2SA683, 2SA684
I
— Ta Area of safe operation (ASO)
VCE=–10V
CEO
)
A
(
C
– 0.3
– 0.1
– 0.03
– 0.01
Collector current I
– 0.003
– 0.001
)
–10
–3
I
CP
–1
I
C
– 0.1 –1 –10 –100– 0.3 –3 –30
Single pulse
Ta=25˚C
t=10ms
t=1s
2SA683
Collector to emitter voltage VCE (V
2SA684
)
4
10
3
10
)
)
Ta
(
2
10
Ta=25˚C
(
CEO
I
CEO
I
10
1
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
3
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