Page 1
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA634
DESCRIPTION
·With TO-202 package
·Complement to type 2SC1096
·High current capability
APPLICATIONS
·Audio frequency power amplifier
·Low speed switching
PINNING(see Fig.2)
PIN DESCRIPTION
1
Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B Base current -0.6 A
B
P
T
Collector-base voltage Open emitter -40 V
Collector-emitter voltage Open base -30 V
Emitter-base voltage Open collector -5 V
Collector current -3.0 A
Collector current-peak -6.0 A
Ta=25℃ 1.2
Total power dissipation
T
=25℃ 10
C
W
T
j
T
stg
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA634
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEsat
V
BEsat
V
(BR)CEO
h
FE-1
h
FE-2
I
CBO
I
EBO
C
OB
f
T
h
Collector-emitter saturation voltage IC=-3.0A ;IB=-0.3 A -2.0 V
Base-emitter saturation voltage IC=-3.0A ;IB=-0.3 A -2.0 V
Collector-emitter breakdown voltage IC=10mA; IB=0 -30 V
DC current gain IC=-20mA ; VCE=-5V 20
DC current gain IC=-1A ; VCE=-5V 40 250
Collector cut-off current VCB=-30V; IE=0 -1.0
Emitter cut-off current VEB=-3V; IC=0 -1.0
μA
μA
Output capacitance IE=0; VCB=-10V;f=1MHz 75 pF
Transition frequency IC=-0.1A ; VCE=-5V 55 MHz
Classifications
FE-2
N M L K
40-60 50-100 80-160 120-250
2
Page 3
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA634
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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