1) High speed switching.
(tf : Ty p. : 30nsatIC = −2A)
2) Low saturation voltage, typically
(Typ. : −200mV
atIC =
−
1.0A, IB = −0.1A)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5880
zApplications
Small signal low frequency amplifier
High speed switching
zDimensions (Unit : mm)
ATV
(1) Emitter
(2) Collector
(3) Base
Abbreviated symbol :
Taping specifications
A2093
2SA2093
zStructure
PNP Silicon epitaxial plana r transistor
zPackaging specifications
Taping
TV2
2500
Type
2SA2093
Package
Code
Basic ordering unit (pieces)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗Pw=10ms
DC
Pulsed
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
LimitsUnit
−60
−60
−6
−2.0
−4.0
1.0
150
−55 to 150
W
°C
°C
V
V
V
A
∗
A
Rev.A 1/3
Page 2
Transistors
zElectrical characteristics (T a=25°C)
ParameterSymbolMin.Typ.Max.UnitCondition
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Turn-on time
Storage time
Fall time
∗Single non repetitive pulse
FE RANK
zh
QR
120−270180−390
zElectrical characteristic curves
−10
(A)
C
−1
Ta=125°C
Ta=25°C
Ta= −40°C
−0.1
COLLECTOR CURRENT : I
−0.01
0−0.5−1−1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded Emitter
Propagation Characteristics
−10
VCE= −2V
Ta=25°C
BV
BV
BV
V
Tstg
CEO
CBO
EBO
I
CBO
I
EBO
CE (sat)
h
FE
f
T
Cob
Ton
Tf
−60
−60
−6
−
−
−
120
−
−
−
−
−
1000
FE
100
10
DC CURRENT GAIN : h
1
−0.001−0.01−0.1
−10
−
−
−
−
−
−200
−
310
25
25
120
30
COLLECTOR CURRENT : IC (A)
−
−
−
−1.0
−1.0
−500
390
−
−
−
−
−
VCE= −5V
V
V
CE
CE
= −3V
= −2V
V
V
V
µA
µA
mV
−
MHz
pF
ns
ns
ns
Ta=25°C
Fig.2 DC Current Gain vs.
Collector Current (Ι)
IC / IB=10 / 1
C
= −1mA
I
I
C
= −100µA
E
= −100µA
I
V
CB
= −40V
EB
= −4V
V
I
C
= −1.0A
I
B
= −100mA
V
CE
= −2V
C
= −100mA
I
V
CE
= −10V
I
E
=100mA
f=10MHz
CB
= −10V
V
I
E
=0mA
f=1MHz
I
C
= −2.0A
IB1= −200mA
IB2=200mA
V
CC
−25V
−10−1
∗
∗
1000
FE
100
Ta=125°C
Ta=25°C
Ta= −40°C
10
DC CURRENT GAIN : h
1
−0.001−0.01−0.1
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs.
Collector Current (ΙΙ)
−10
2SA2093
VCE= −2V
−10−1
IC / IB=10 / 1
−1
(V)
CE (sat)
−0.1
COLLECTOR SATURATION
VOLTAGE : V
−0.01
IC / IB=20/1
C
/ IB=10/1
I
−0.001−0.01−0.1−10−1
COLLECTOR CURRENT : IC (A)
Fig.4
Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
−1
(V)
CE (sat)
COLLECTOR SATURATION
VOLTAGE : V
−0.01
Ta=125°C
Ta=25°C
Ta= −40°C
−0.1
−0.001−0.01−0.1−10−1
COLLECTOR CURRENT : IC (A)
Fig.5
Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)
−1
(V)
BE (sat)
−0.1
BASE EMITTER SATURATION
VOLTAGE : V
−0.01
−0.001−0.01−0.1−10−1
COLLECTOR CURRENT : IC (A)
Ta=125°C
Ta=25°C
Ta= −40°C
Fig.6 Base-Emitter Saturation
Voltage vs. Collecter Current
Rev.A 2/3
Page 3
Transistors
1000
100
Ta=25°C
CE
= −10V
V
1000
100
Ta=25°C
f=1MHz
1000
2SA2093
Ta=25°C
CC
V
C
/ IB=10 / 1
tstg
I
= −25V
10
TRANSITION FREQUENCY : fT (MHz)
1
0.0010.010.1110
EMITTER CURRENT : IE (A)
Fig.7 Transition Frequency
10
COLLECTOR OUTPUT
CAPACITANCE : Cob (pF)
1
−0.1−1−10−100
COLLECTOR TO BASE VOLTAGE : V
Fig.8
Collector Output Capacitance
−10
(A)
C
−1
−0.1
−0.01
Single
COLLECTOR CURRENT : I
non repetitive
Pulsed
−0.001
−0.1−1−100−10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
100ms
DC
Fig.10 Safe Operating Area
100ms
1ms
1µs
zSwitching characteristics measurement circuits
P
V
IN
W
PW 50µs
DUTY CYCLE ≤ 1%
100
SWITCHING TIME : SW(ns)
10
−0.01−0.1−1−10
(V)
CB
tf
ton
COLLECTOR CURRENT : IC (A)
Fig.9 Switching Time
RL=12.5Ω
I
I
B1
I
B2
C
VCC −25V
I
B2
I
B1
BASE CURRENT
WAVEFORM
COLLECTOR CURRENT
WAVEFORM
90%
TonTstgTf
10%
C
I
Rev.A 3/3
Page 4
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
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and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
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