Datasheet 2SC5610, 2SA2022 Datasheet (SANYO)

Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications
Ordering number:ENN6367
2SA2022/2SC5610
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· Relay drivers, lamp drivers, motor drivers, strobes.
Features
· Adoption of MBIT processes.
· Large current capacitance.
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· High allowable power dissipation.
Specifications
( ) : 2SA2022 Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
OBC OEC OBE
C
PC
B
C
OBC OBE
EF
T
Tc=25˚C
V
BC
V
BE
V
EC
V
EC BC
Package Dimensions
unit:mm
2041A
[2SA2022/2SC5610]
10.0
3.2
18.1
5.6
1
2.55
2.55
I,V04)–(=
0=1.0)–(Aµ
E
I,V4)–(=
0=1.0)–(Aµ
C
I,V2)–(=
A1)–(=051003
C
I,V01)–(=
C
Am005)–(=
zHM1=f,V01)–(=
3.5
1.6
1.2
0.75
23
2.55
2.55
4.5
2.8
7.2
16.0
2.4
0.7
14.0
1 : Base 2 : Collector
2.4
3 : Emitter SANYO : TO220ML
nimpytxam
Continued on next page.
sgnitaR
)092(zHM
033zHM
82)05(Fp
06)05–(V
05)–(V
6)–(V
7)–(A
01)–(A
2.1)–(A 2W 81W
˚C ˚C
tinU
21000TS (KOTO) TA-2470 No.6367–1/5
Page 2
2SA2022/2SC5610
Continued on preceding page.
retemaraPlobmySsnoitidnoC
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
Switching Time Test Circuit
I
PW=20µs D.C.≤1%
INPUT
50
B1
(For PNP, the polarity is reversed.)
I
B2
R
B
V
R
+
100µF
+
470µF
OUTPUT
R
L
EC EB
no gts
f
)tas(ICI,A5.2)–(=
)tas(ICI,A5.2)–(=
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
B B
I,Aµ01)–(=
E
R,Am1)–(=
I,Aµ01)–(=
C
Am521)–(= Am521)–(=58.0)–(2.1)–(V
0=
= 05)–(V
EB
0=6)–(V
tiucriCtseTdeificepseeS tiucriCtseTdeificepseeS tiucriCtseTdeificepseeS
sgnitaR
nimpytxam
)051–()003–(Vm
031062Vm
)05–(V
06V
03sn
)052( 003 51sn
tinU
sn sn
VBE=--5V
10IB1= --10IB2= IC=2A
--7
2SA2022
--6
--160mA
–A
--5
--180mA
C
--4
--3
--200mA
--2
Collector Current, I
--1
0
0 --0.4 --0.8 --1.2 --1.6 --2.0
--7
2SA2022 VCE=--2V
--6
–A
--5
--120mA
--140mA
Collector-to-Emitter Voltage, VCE–V
VCC=20V
I
-- V
C
--100mA
I
C
-- V
CE
BE
C
--4
--80mA
--60mA
40mA
--
--20mA
--10mA
--5mA
IB=0
IT01345
I
-- V
7
2SC5610
C
120mA
6
180mA
–A
5
C
Collector Current, I
200mA
4
3
2
1
0
0 0.4 0.8 1.2 1.6 2.0
140mA
160mA
CE
100mA
Collector-to-Emitter Voltage, VCE–V
I
-- V
–A
7
2SC5610 VCE=2V
6
5
C
BE
C
4
80mA
60mA
40mA
20mA
10mA
5mA
IB=0
IT01353
--3
--2
Collector Current, I
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.2--1.0
Ta=75°C
Base-to-Emitter Voltage, VBE–V
3
Ta=75°C
°C
°C
25
--25
IT01354
°C
°C
25
--25
IT01346
2
Collector Current, I
1
0
0 0.2 0.4 0.6 0.8 1.21.0
Base-to-Emitter Voltage, VBE–V
No.6367–2/5
Page 3
1000
FE
100
DC Current Gain, h
2SA2022/2SC5610
h
h
-- I
FE
7 5
3 2
7 5
3 2
Ta=75°C
25°C
--25°C
C
2SA2022 VCE=--2V
1000
FE
7 5
3 2
Ta=75°C
--25°C
100
7 5
DC Current Gain, h
3 2
FE
-- I
25°C
C
2SC5610 VCE=2V
--1000
(sat) – mV
10
--0.01
7 5
3 2
325
2SA2022 IC / IB=20
73257 3257
Collector Current, IC–A
VCE(sat) -- I
--1.0
C
CE
--100 7 5
3 2
Collector-to-Emitter
Saturation Voltage, V
--10
--10
--1.0
(sat) – V
CE
--0.1
Collector-to-Emitter
Saturation Voltage, V
--0.01
--10
(sat) – V
23 57 23 57 23 57
--0.01 --0.1
7 5
3 2
7 5
3 2
7 5
3 2
23 57 23 57 23 57
--0.01 --0.1
7 5
3 2
Collector Current, IC–A
VCE(sat) -- I
Collector Current, IC–A
VBE(sat) -- I
Ta=75
--25
Ta=75
°C
C
°
--1.0 --10
C
°C
°C
--25
--1.0 --10
C
BE
--1.0 7
5
3 2
Base-to-Emitter
Saturation Voltage, V
--0.1
23 57 23 57 23 57
--0.01 --0.1 --1.0 --10
Ta=--25°C
75°C
Collector Current, IC–A
25°C
IT01347
25°C
IT01348
2SA2022 IC / IB=50
25°C
IT01349
2SA2022 IC / IB=20
IT01350
1000
(sat) – mV
10
0.01
7 5
3 2
--10--0.1
325
73257 3257
Collector Current, IC–A
VCE(sat) -- I
1.0
C
100.1
IT01355
2SC5610 IC / IB=20
CE
100
7 5
3 2
Collector-to-Emitter
Saturation Voltage, V
10
23 57 23 57 23 57
0.01 0.1
10
7 5
3 2
1.0
(sat) – V
7 5
CE
3 2
0.1 7 5
3
Collector-to-Emitter
Saturation Voltage, V
2
0.01
(sat) – V
23 57 23 57 23 57
0.01 0.1
10
7 5
3 2
Collector Current, IC–A
VCE(sat) -- I
Collector Current, IC–A
VBE(sat) -- I
°C
Ta=75
C
°
--25
1.0 10
C
Ta=75°C
C
°
--25
1.0 10
C
25°C
IT01356
2SC5610 IC / IB=50
25°C
IT01357
2SC5610 IC / IB=20
BE
1.0 7
5
3 2
Base-to-Emitter
Saturation Voltage, V
0.1
0.01 0.1 1.0 10
Ta=--25°C
75°C
23 57 23 57 23 57
Collector Current, IC–A
25°C
IT01358
No.6367–3/5
Page 4
2SA2022/2SC5610
5 3
2
Cob -- V
CB
2SA2022 f=1MHz
5 3 2
Cob -- V
CB
2SC5610 f=1MHz
100
7 5
3 2
10
7
Output Capacitance, Cob – pF
5 3
2
23 57 23 5 23 57
--1.0 --10
1000
7 5
Collector-to-Base Voltage, VCB-- V
--1 .0
f
T
-- I
C
– MHz
3
T
2
100
7 5
Gain-Bandwidth Product, f
3 2
2
10
7 5
3
–A
2
C
1.0 7 5
3 2
0.1
Collector Current, I
2SA2022 / 2SC5610
7
Tc=25°C
5
Single pulse
3
For PNP, the minus sign (–) is omitted
2
22 20 18 16
–W
C
14 12 10
8 6 4
Collector Dissipation, P
2 0
25757 3 2 573253
--0.01
--0.1 --1.0 0.01
Collector Current, IC–A
A S O
100ms
I
CP
I
C
DC operation
2537 2 5372537
1.0 10 100
Collector-to-Emitter Voltage, VCE–V
P
-- Tc
C
2006040 80 100 140120 160
Case Temperature, Tc – ˚C
2SA2022 VCE=--2V
µs
10
100
1ms
10ms
µs
500µs
2SA2022 / 2SC5610
IT01351
IT01352
IT01361
IT01870
100
Output Capacitance, Cob – pF
1000
– MHz
T
100
Gain-Bandwidth Product, f
2.2
2.0
1.8
–W
1.6
C
1.4
1.2
1.0
0.8
0.6
0.4
Collector Dissipation, P
0.2
7 5
3 2
10
7 5
3 2
1.0
7 5
3
2
7 5
3 2
23 57
Collector-to-Base Voltage, VCB-- V
f
-- I
T
C
25757 3 2 573253
0.1 1.0
Collector Current, IC–A
P
-- Ta
C
2SA2022 / 2SC5610
No heat sink
0
2006040 80 100 140120 160
Ambient Temperature, Ta – ˚C
10
2SC5610 VCE=2V
No.6367–4/5
2
IT01359
IT01360
IT01362
Page 5
2SA2022/2SC5610
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of February, 2000. Specifications and information herein are subject to change without notice.
PS No.6367–5/5
Loading...