Datasheet 2SC5567, 2SA2014 Datasheet (SANYO)

Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications
Ordering number:ENN6321
2SA2014/2SC5567
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· Relay drivers, lamp drivers, motor drivers, strobes.
Package Dimensions
unit:mm
2163
Features
· Adoption of MBIT processes.
· Large current capacitance.
[2SA2014/2SC5567]
4.5
1.6
1.5
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· Ultrasmall-sized package permitting applied sets to be made small and slim.
· High allowable power dissipation.
Specifications
( ) : 2SA2014
0.5
0.4
1.5
3.0
0.75
2.5
4.25max
1.0
123
0.4
1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view)
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC OEC OBE
C
PC
B
Mounted on a ceramic board (250mm
C
Tc=25˚C
2
×0.8mm)
51)–(V
51)–(V
5)–(V
9)–(A
21)–(A
2.1)–(A
3.1W
5.3W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
V
OBC OBE
EF
T
BC
V
BE
V
EC
V
EC BC
I,V21)–(=
0=1.0)–(Aµ
E
I,V4)–(=
0=1.0)–(Aµ
C
I,V2)–(=
C
I,V2)–(=
C
Am005)–(=002065 Am005)–(=
zHM1=f,V01)–(=
nimpytxam
Marking : 2SA2014 : AU 2SC5567 : FD Continued on next page.
sgnitaR
)022(zHM
082zHM
05)09(Fp
tinU
21000TS (KOTO) TA-2598 No.6321–1/5
Page 2
2SA2014/2SC5567
Continued on preceding page.
retemaraPlobmySsnoitidnoC
I
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
EC
EB
no gts
f
)tas(
I
)tas(ICI,A3)–(=
I
OBC)RB(
I
OEC)RB(
I
OBE)RB(
Switching Time Test Circuit
(For PNP, the polarity is reversed.)
I
PW=20µs D.C.≤1%
INPUT
50
B1
I
B2
R
B
V
R
100µF 470µF
VBE=--5V
20IB1= --20IB2= IC=3A
+
+
VCC=5V
OUTPUT
R
L
I,A3)–(=
C
C
C C E
B
B
Am06)–(=
I,A5.4)–(=
B
I,Aµ01)–(=
R,Am1)–(=
I,Aµ01)–(=
Am09)–(=
Am06)–(=58.0)–(2.1)–(V
0=51)–(V
E
= 51)–(V
EB
0=5)–(V
C
tiucriCtseTdeificepseeS tiucriCtseTdeificepseeS tiucriCtseTdeificepseeS
sgnitaR
nimpytxam
)011–()071–(Vm
021081Vm
)061–()042–(Vm
081082Vm
03sn
)021(
081
52)41(sn
tinU
sn sn
--9
--8
--7
C
2SA2014
CE
--90mA
I
-- V
–A
--6
C
--5
--4
--3
Collector Current, I
--2
--1
0
0 --0.1 --0.2 --0.3 --0.4 --0.5
Collector-to-Emitter Voltage, VCE–V
--9
--8
--7
–A
--6
C
--5
--4
--100mA
I
C
-- V
BE
25°C
--80mA
--70mA
--60mA
--50mA
--40mA
--30mA
--20mA
--10mA
IB=0
IT00170
2SA2014
VCE=--2V
9
2SC5567
8
7
C
90mA
CE
80mA
I
-- V
–A
6
C
5
4
3
Collector Current, I
2
1
0
0 0.1 0.2 0.3 0.4 0.5
Collector-to-Emitter Voltage, VCE–V
9
8
7
–A
6
C
5
4
100mA
I
C
-- V
BE
25°C
70mA
60mA
50mA
40mA
30mA
20mA
10mA
IB=0
IT00171
2SC5567 VCE=2V
--3
Collector Current, I
--2
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.4--1.0 --1.2
Base-to-Emitter Voltage, VBE–V
Ta=75°C
--25
3
Collector Current, I
°C
IT00172
2
1
0
0 0.2 0.4 0.6 0.8 1.41.0 1.2
Base-to-Emitter Voltage, VBE–V
°C
Ta=75
°C
--25
IT00173
No.6321–2/5
Page 3
1000
FE
2SA2014/2SC5567
h
-- I
FE
7 5
3
25°C
2
--25°C
Ta=75°C
C
2SA2014 VCE=--2V
1000
FE
7 5
3 2
--25°C
h
FE
Ta=75°C
25°C
-- I
C
2SC5567 VCE=2V
100
7 5
DC Current Gain, h
3 2
10
--0.01
--1000 7 5
3 2
(sat) – mV
CE
--100 7
5
3 2
--10
Collector-to-Emitter
Saturation Voltage, V
7 5
23 57 23 57 23 57
--0.01 --0.1
--1000 7 5
3 2
(sat) – mV
CE
--100 7 5
3 2
325
73257 3257
Collector Current, IC–A
VCE(sat) -- I
--1.0
C
°C
Ta=75
--25°C
Collector Current, IC–A
VCE(sat) -- I
--1.0 --10
C
°C
Ta=75
°C
--25
IT00174
2SA2014 IC / IB=20
25°C
IT00176
2SA2014 IC / IB=50
25°C
100
7 5
DC Current Gain, h
3 2
10
--10--0.1
0.01
1000
7 5
3 2
325
73257 3257
Collector Current, IC–A
VCE(sat) -- I
1.0
C
100.1
IT00175
2SC5567 IC / IB=20
(sat) – mV
CE
100
7 5
3 2
10
Collector-to-Emitter
Saturation Voltage, V
7 5
23 57 23 57 23 57
0.01 0.1
1000
7 5
3 2
Collector Current, IC–A
VCE(sat) -- I
°C
Ta=75
--25°C
1.0 10
C
25°C
IT00178
2SC5567 IC / IB=50
(sat) – mV
100
CE
7 5
3 2
Ta=75
°C
25°C
--25°C
--10
Collector-to-Emitter
Saturation Voltage, V
7 5
23 57 23 57 23 57
--0.01 --0.1
--10000 7
5
3 2
(sat) – mV
Collector Current, IC–A
VBE(sat) -- I
--1.0 --10
C
BE
--1000 7
5
3 2
Base-to-Emitter
Saturation Voltage, V
--100
--0.01 --0.1 --1.0 --10
Ta=--25°C
75°C
23 57 23 57 23 57
25°C
Collector Current, IC–A
IT00177
2SA2014 IC / IB=50
IT00180
10
Collector-to-Emitter
Saturation Voltage, V
7 5
23 57 23 57 23 57
0.01 0.1
10000
7 5
3 2
(sat) – mV
Collector Current, IC–A
VBE(sat) -- I
1.0 10
C
BE
1000
7 5
3 2
Base-to-Emitter
Saturation Voltage, V
100
23 57 23 57 23 57
0.01 0.1 1.0 10
°C
Ta=--25
°C
75
25°C
Collector Current, IC–A
IT00179
2SC5567 IC / IB=50
IT00181
No.6321–3/5
Page 4
1000
7 5
3 2
100
7 5
3 2
10
7 5
Output Capacitance, Cob – pF
3 2
1.0
1000
– MHz
T
100
10
Gain-Bandwidth Product, f
1.0
10
–A
C
1.0
0.1
Collector Current, I
0.01
--1 .0
7 5
3 2
7 5
3 2
7 5
3 2
--0.01
3 2
7 5
3 2
7 5
3 2
7 5
3 2
Collector-to-Base Voltage, VCB-- V
2573
I
CP
I
C
2SA2014 / 2SC5567 Tc=25°C Single pulse For PNP, the minus sign (–) is omitted
Collector-to-Emitter Voltage, VCE–V
4.0
3.5
Cob -- V
23 57
f
--0 .1
Collector Current, IC–A
DC operation
1.00.1 10
P
-- I
T
2573
A S O
100ms
-- Tc
C
CB
--1 0
C
--1 .0
1ms
10ms
2SA2014 / 2SC5567
2SA2014/2SC5567
2SA2014 f=1MHz
23
IT00182
2SA2014 VCE=--2V
2573
500µs
100µs
IT00184
2
IT00186
--1 0
325372537
1000
100
10
Output Capacitance, Cob – pF
1.0
1000
– MHz
T
100
Gain-Bandwidth Product, f
1.0
1.5
1.3
–W
1.0
C
0.5
Collector Dissipation, P
Cob -- V
7 5
3 2
7 5
3 2
7 5
3 2
1.0
23 57
Collector-to-Base Voltage, VCB-- V
f
7 5
3 2
7 5
3 2
10
7 5
3 2
2573
0.01
0.1
Collector Current, IC–A
P
T
2573
C
-- I
-- Ta
CB
10
C
1.0
2SA2014 / 2SC5567
Mounted on a ceramic board (250mm
0
2006040 80 100 140120 160
Ambient Temperature, Ta – ˚C
2SC5567 f=1MHz
2SC5567 VCE=2V
2573
2
×0.8mm)
23
IT00183
10
IT00185
IT00187
3.0
–W
C
2.5
2.0
1.5
1.0
Collector Dissipation, P
0.5
0
2006040 80 100 140120 160
Case Temperature, Tc – ˚C
IT01871
No.6321–4/5
Page 5
2SA2014/2SC5567
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of February, 2000. Specifications and information herein are subject to change without notice.
PS No.6321–5/5
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