Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications
Ordering number:ENN6307A
2SA2013/2SC5566
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· Relay drivers, lamp drivers, motor drivers, strobes.
Features
· Adoption of FBET and MBIT processes.
· High current capacitance.
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· Ultrasmall package facilitates miniaturization in end
products.
· High allowable power dissipation.
Specifications
( ) : 2SA2013
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
Marking : 2SA2013 : AT 2SC5566 : FC
OBC
OEC
OBE
C
PC
B
Mounted on a ceramic board (250mm
C
Tc=25˚C
V
OBC
V
OBE
V
EF
V
T
Package Dimensions
unit:mm
2038A
[2SA2013/2SC5566]
4.5
1.6
0.4
I,V04)–(=
BC
BE
EC
EC
BC
0=1)–(Aµ
E
I,V4)–(=
0=1)–(Aµ
C
I,V2)–(=
C
I,V01)–(=
C
Am005)–(=002065
Am005)–(=
zHM1=f,V01)–(=
3
1.5
0.75
2
×0.8mm)
0.5
2
1
3.0
1.5
2.5
4.25max
1.0
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
sgnitaR
nimpytxam
)063(zHM
004zHM
51)42(Fp
Continued on next page.
08)05–(V
05)–(V
6)–(V
4)–(A
7)–(A
006)–(Am
3.1W
5.3W
˚C
˚C
tinU
52501TS KT TA-3260 No.6307–1/5
Page 2
2SA2013/2SC5566
Continued on preceding page.
retemaraPlobmySsnoitidnoC
I
no
gts
f
C
)tas(
I
C
)tas(ICI,A2)–(=
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
EC
EB
Switching Time Test Circuit
I
VR10
B1
I
B2
R
B
+
100µF 470µF
OUTPUT
25Ω
+
PW=20µs
D.C.≤1%
INPUT
50Ω
I,A1)–(=
B
I,A2)–(=
B
B
Am05)–(=
Am001)–(=
Am001)–(=98.0)–(2.1)–(V
I,Aµ01)–(=
0=
E
R,Am1)–(=
=∞ 05)–(V
EB
I,Aµ01)–(=
0=6)–(V
C
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
sgnitaR
nimpytxam
)501–()081–(Vm
58031Vm
)002–()043–(Vm
051522Vm
)05–(V
08V
53)03(sn
)032(
003
02)51(sn
tinU
sn
sn
--4
2SA2013
VBE=--5V
10IB1= --10IB2= IC=1A
(For PNP, the polarity is reversed.)
I
C
--90mA
-- V
--100mA
VCC=25V
CE
--80mA
--3
–A
C
Collector Current, I
--4.0
--3.5
--3.0
–A
C
--2.5
--70mA
--60mA
--2
--1
0
0 --0.4 --0.8 --1.2 --1.6 --2.0
Collector-to-Emitter Voltage, VCE–V
I
-- V
C
BE
--30mA
25°C
--50mA
--40mA
--20mA
--10mA
IB=0
IT00152
2SA2013
VCE=--2V
–A
C
Collector Current, I
4.0
3.5
3.0
–A
C
2.5
4
90mA
80mA
3
2
1
2SC5566
0
0
I
-- V
70mA
C
60mA
CE
100mA
0.4 0.8 1.2 1.6 2.0
Collector-to-Emitter Voltage, VCE–V
I
-- V
C
BE
50mA
40mA
30mA
20mA
10mA
IB=0
IT00153
2SC5566
VCE=2V
25°C
--2.0
--1.5
--1.0
Collector Current, I
--0.5
0
0 --0.2 --0.4 --0.6 --0.8 --1.4--1.0 --1.2
Ta=75°C
°C
--25
Base-to-Emitter Voltage, VBE–V
IT00154
2.0
1.5
1.0
Collector Current, I
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE–V
°C
Ta=75
--25°C
IT00155
No.6307–2/5
Page 3
1000
FE
100
DC Current Gain, h
7
5
3
2
7
5
3
2
Ta=75°C
25°C
--25°C
h
FE
-- I
2SA2013/2SC5566
h
C
2SA2013
VCE=--2V
1000
FE
7
5
3
2
Ta=75°C
25°C
100
7
5
DC Current Gain, h
3
2
FE
--25°C
-- I
C
2SC5566
VCE=2V
10
--0.01
--1000
7
5
3
2
--100
(sat) – mV
7
5
CE
3
2
--1 0
7
5
3
Collector-to-Emitter
Saturation Voltage, V
2
--1 .0
--0.01 --0.1
--10000
7
5
3
2
--1000
(sat) – mV
7
CE
5
3
2
--100
7
5
3
Collector-to-Emitter
Saturation Voltage, V
2
--1 0
--0.01 --0.1
--1 0
7
5
3
2
(sat) – V
325
73257 3257
Collector Current, IC–A
VCE(sat) -- I
--1 .0
C
2SA2013
IC / IB=20
°C
Ta=75
°C
25
--
23 57 23 57 23 57
Collector Current, IC–A
25°C
VCE(sat) -- I
--1.0 --10
C
Ta=75°C
--25°C
23 57 23 57 23 57
Collector Current, IC–A
VBE(sat) -- I
25°C
--1.0 --10
C
BE
--1 .0
7
5
3
2
Base-to-Emitter
Saturation Voltage, V
--0 .1
--0.01 --0.1 --1.0 --10
Ta=--25°C
75°C
23 57 23 57 23 57
25°C
Collector Current, IC–A
IT00156
IT00158
2SA2013
IC / IB=50
IT00159
2SA2013
IC / IB=50
IT00162
10
--1 0--0 .1
0.01
1000
7
5
3
2
100
(sat) – mV
7
5
CE
3
2
10
7
5
3
Collector-to-Emitter
Saturation Voltage, V
2
1.0
0.01 0.1
10000
7
5
3
2
1000
(sat) – mV
7
CE
5
3
2
100
7
5
3
Collector-to-Emitter
Saturation Voltage, V
2
10
0.01 0.1
10
7
5
3
(sat) – V
2
BE
1.0
7
5
3
Base-to-Emitter
Saturation Voltage, V
2
0.1
0.01 0.1 1.0 10
325
73257 3257
Collector Current, IC–A
VCE(sat) -- I
1.0
IT00157
C
2SC5566
IC / IB=20
°C
Ta=75
°C
--25
23 57 23 57 23 57
Collector Current, IC–A
25°C
VCE(sat) -- I
1.0 10
IT00160
C
2SC5566
IC / IB=50
°C
Ta=75
°C
--25
23 57 23 57 23 57
Collector Current, IC–A
VBE(sat) -- I
25°C
1.0 10
IT00161
C
2SC5566
IC / IB=50
°C
Ta=--25
75°C
23 57 23 57 23 57
Collector Current, IC–A
25°C
IT00163
100.1
No.6307–3/5
Page 4
2SA2013/2SC5566
5
3
2
Cob -- V
CB
2SA2013
f=1MHz
5
3
2
Cob -- V
CB
2SC5566
f=1MHz
100
7
5
3
2
10
7
Output Capacitance, Cob – pF
5
3
2
1000
7
5
– MHz
3
T
2
100
7
5
3
2
Gain-Bandwidth Product, f
10
57
2
10
7
5
3
–A
2
C
1.0
7
5
3
2
0.1
7
Collector Current, I
2SA2013 / 2SC5566
5
Tc=25°C
3
2
Single pulse
For PNP, the minus sign is omitted
0.01
0.1
4.0
3.5
23 757523752375
--0.1
Collector-to-Base Voltage, VCB-- V
257 7 73
--0.01
ICP=7A
Collector Current, IC–A
100ms
IC=4A
Collector-to-Emitter Voltage, VCE–V
1.0
--1.0 --10 --100
f
-- I
T
C
IT00164
2SA2013
VCE=--10V
253253
--0.1
--1.0 --10
IT00166
A S O
1ms
P
10ms
DC op
C
e
ration
-- Tc
2SA2013 / 2SC5566
100µs
500µs
253725372537
10 100
IT00168
100
10
Output Capacitance, Cob – pF
1000
– MHz
T
100
Gain-Bandwidth Product, f
10
2.0
1.5
–W
C
1.3
1.0
0.5
Collector Dissipation, P
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
5
23 37737755
0.1
Collector-to-Base Voltage, VCB-- V
257 7 73
0.01
Collector Current, IC–A
2
1.0
f
-- I
T
C
253253
0.1
P
-- Ta
C
10
1.0 10
2SA2013 / 2SC5566
Mounted on a ceramic board (250mm
0
2006040 80 100 140120 160
Ambient Temperature, Ta – ˚C
25
2SC5566
VCE=10V
2
×0.8mm)
5
IT00165
IT00167
IT00169
100
3.0
–W
C
2.5
2.0
1.5
1.0
Collector Dissipation, P
0.5
0
2006040 80 100 140120 160
Case Temperature, Tc – ˚C
IT01533
No.6307–4/5
Page 5
2SA2013/2SC5566
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2001. Specifications and information herein are subject to
change without notice.
PS No.6307–5/5
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