Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications
Ordering number:ENN6306
2SA2012/2SC5565
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· Relay drivers, lamp drivers, motor drivers, strobes.
Features
· Adoption of MBIT processes.
· Large current capacitance.
· Low collector-to-emitter saturation voltage.
· Ultrasmall-sized package permitting applied sets to
be made small and slim.
· High allowable power dissipation.
Specifications
( ) : 2SA2012
Absolute Maximum Ratings at Ta = 25˚C
20IB1= --20IB2= IC=500mA
(For PNP, the polarity is reversed.)
I
C
--100mA
-- V
VCC=12V
CE
–A
C
--3
--2
Collector Current, I
--1
0
0--0.2--0.4--0.6--0.8--1.0
Collector-to-Emitter Voltage, VCE–V
I
-- V
C
°C
Ta=75
BE
25°C
°C
--25
--5.0
--4.5
--4.0
–A
--3.5
C
--3.0
--2.5
--2.0
--1.5
Collector Current, I
--1.0
--0.5
0
0--0.2--0.4--0.6--0.8--1.4--1.0--1.2
Base-to-Emitter Voltage, VBE–V
--80mA
--70mA
--60mA
--50mA
--40mA
--30mA
--20mA
--10mA
IB=0
IT00134
2SA2012
VCE=--2V
IT00136
5
2SC5565
4
90mA
C
100mA
CE
I
-- V
–A
C
3
2
Collector Current, I
1
0
0
5.0
4.5
4.0
–A
3.5
C
3.0
2.5
2.0
1.5
Collector Current, I
1.0
0.5
0
00.20.40.60.81.01.21.4
0.20.40.60.81.0
Collector-to-Emitter Voltage, VCE–V
I
-- V
C
BE
25°C
°C
°C
Ta=75
--25
Base-to-Emitter Voltage, VBE–V
80mA
70mA
60mA
50mA
40mA
30mA
20mA
10mA
IB=0
IT00135
2SC5565
VCE=2V
IT00137
No.6306–2/5
1000
FE
100
DC Current Gain, h
2SA2012/2SC5565
h
-- I
FE
7
5
3
2
Ta=75°C
25°C
C
2SA2012
VCE=--2V
1000
FE
7
5
3
2
25°C
--25°C
100
7
5
3
2
7
5
DC Current Gain, h
3
2
h
FE
Ta=75°C
--25°C
-- I
C
2SC5565
VCE=2V
--1000
10
--0.01
7
5
3
2
325
732573257
Collector Current, IC–A
VCE(sat) -- I
--1 .0
C
(sat) – mV
CE
--100
7
5
3
2
--1 0
Collector-to-Emitter
Saturation Voltage, V
7
5
23 5723 5723 57
--0.01--0.1
Ta=75
°C
°C
--25
--1.0--10
Collector Current, IC–A
--1000
(sat) – mV
2SA2012
7
IC / IB=50
5
3
2
VCE(sat) -- I
C
CE
--100
7
5
3
2
Collector-to-Emitter
Saturation Voltage, V
--1 0
23 5723 5723 57
--0.01--0.1
Ta=75
--25°C
°C
25°C
--1.0--10
Collector Current, IC–A
--1 0
7
5
3
2
(sat) – V
VBE(sat) -- I
C
BE
--1 .0
7
5
3
2
Base-to-Emitter
Saturation Voltage, V
--0 .1
--0.01--0.1--1.0--10
Ta=--25°C
75°C
23 5723 5723 57
25°C
Collector Current, IC–A
IT00138
2SA2012
IC / IB=20
25°C
IT00140
IT00141
2SA2012
IC / IB=50
IT00144
--1 0--0 .1
10
0.01
1000
7
5
3
2
325
732573257
Collector Current, IC–A
VCE(sat) -- I
1.0
C
100.1
IT00139
2SC5565
IC / IB=20
(sat) – mV
CE
100
7
5
3
2
10
Collector-to-Emitter
Saturation Voltage, V
7
5
23 5723 5723 57
0.010.1
1000
7
5
3
2
(sat) – mV
Collector Current, IC–A
°C
Ta=75
°C
--25
VCE(sat) -- I
25°C
1.010
IT00142
C
2SC5565
IC / IB=50
CE
100
7
5
3
2
Collector-to-Emitter
Saturation Voltage, V
10
23 5723 5723 57
0.010.1
10
7
5
3
2
(sat) – V
--25°C
Collector Current, IC–A
°C
Ta=75
25°C
VBE(sat) -- I
1.010
IT00143
C
2SC5565
IC / IB=50
BE
1.0
Base-to-Emitter
Saturation Voltage, V
0.1
0.010.11.010
Ta=--25°C
7
5
3
2
75°C
23 5723 5723 57
25°C
Collector Current, IC–A
IT00145
No.6306–3/5
2SA2012/2SC5565
5
3
2
Cob -- V
CB
2SA2012
f=1MHz
5
3
2
Cob -- V
CB
2SC5565
f=1MHz
100
7
5
3
2
10
7
Output Capacitance, Cob – pF
5
3
2
1000
7
5
– MHz
3
T
2
100
7
5
3
2
Gain-Bandwidth Product, f
10
57
2
I
10
7
5
I
3
–A
2
C
1.0
7
5
3
2
0.1
7
Collector Current, I
5
2SA2012 / 2SC5565
Tc=25°C
3
2
Single pulse
For PNP, the polarity is reversed.
0.01
0.1
4.0
3.5
23 575723 5523
--0.1
Collector-to-Base Voltage, VCB-- V
257773
--0.01
CP
Collector Current, IC–A
100ms
C
Collector-to-Emitter Voltage, VCE–V
7
--1.0--10
f
-- I
T
C
253253
--0.1
A S O
1ms
10ms
DC operation
25372537
1.0
P
-- Tc
C
2SA2012 / 2SC5565
IT00146
2SA2012
VCE=--10V
--1.0--10
IT00148
100
µs
500
µs
253
10
IT00150
100
7
5
3
2
10
7
Output Capacitance, Cob – pF
5
3
2
7253725753 253
0.11.010
Collector-to-Base Voltage, VCB-- V
f
-- I
T
1000
7
5
– MHz
3
T
2
100
7
5
3
2
Gain-Bandwidth Product, f
10
2.0
1.5
–W
C
1.3
1.0
0.5
57
257773
0.01
0.1
Collector Current, IC–A
P
Mounted on a ceramic board (250mm
C
253253
-- Ta
C
2SA2012 / 2SC5565
Collector Dissipation, P
0
200604080100140120160
Ambient Temperature, Ta – ˚C
IT00147
2SC5565
VCE=10V
1.010
2
×0.8mm)
IT00149
IT00151
3.0
–W
C
2.5
2.0
1.5
1.0
Collector Dissipation, P
0.5
0
200604080100140120160
Case Temperature, Tc – ˚C
IT01532
No.6306–4/5
2SA2012/2SC5565
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2000. Specifications and information herein are subject
to change without notice.
PS No.6306–5/5
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