Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications
Ordering number:ENN6305
2SA2011/2SC5564
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· Relay drivers, lamp drivers, motor drivers, strobes.
Features
· Adoption of MBIT processes.
· Large current capacitance.
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· Ultrasmall-sized package permitting applied sets to
be made small and slim.
· High allowable power dissipation.
Specifications
( ) : 2SA2011
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
Marking : 2SA2011 : AR 2SC5564 : FA
OBC
OEC
OBE
C
PC
B
C
OBC
OBE
EF
T
Package Dimensions
unit:mm
2038A
0.4
Mounted on a ceramic board (250mm
Tc=25˚C
V
BC
V
BE
V
EC
V
EC
BC
I,V21)–(=
0=1.0)–(Aµ
E
I,V4)–(=
0=1.0)–(Aµ
C
I,V2)–(=
C
I,V2)–(=
C
Am005)–(=002065
Am005)–(=
zHM1=f,V01)–(=
[2SA2011/2SC5564]
4.5
1.6
0.5
2
3
1.5
0.75
2
×0.8mm)
1
3.0
1.5
2.5
4.25max
1.0
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
sgnitaR
nimpytxam
)053(zHM
083zHM
32)14(Fp
Continued on next page.
51)–(V
51)21–(V
5)–(V
6)–(A
9)–(A
006)–(Am
3.1W
5.3W
˚C
˚C
tinU
21400TS (KOTO) TA-2519 No.6305–1/5
Page 2
2SA2011/2SC5564
Continued on preceding page.
retemaraPlobmySsnoitidnoC
I
no
gts
f
C
)tas(
I
C
)tas(ICI,A5.1)–(=
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
EC
EB
Switching Time Test Circuit
I,A5.1)–(=
B
I,A3)–(=
B
B
I,Aµ01)–(=
R,Am1)–(=
I,Aµ01)–(=
Am03)–(=
Am06)–(=
Am03)–(=58.0)–(2.1)–(V
0=51)–(V
E
=∞
EB
0=5)–(V
C
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
tiucriCtseTdeificepseeS
sgnitaR
nimpytxam
021)–(081)–(Vm
)091–()092–(Vm
002003Vm
)21–(V
51V
03)53(sn
)011(
091
51sn
tinU
sn
sn
V
R
100µF 470µF
VBE=--5V
I
I
B1
I
B2
R
C
B
+
-- V
CE
+
VCC=5V
--70mA
OUTPUT
R
L
--6
--5
–A
--4
C
--3
PW=20µs
D.C.≤1%
INPUT
50Ω
20IB1= --20IB2= IC=1.5A
(For PNP, the polarity is reversed.)
2SA2011
--90mA
--80mA
--100mA
--2
Collector Current, I
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.0
Collector-to-Emitter Voltage, VCE–V
I
-- V
--6
C
BE
2SA2011
VCE=--2V
--5
--60mA
--
50mA
--
40mA
--30mA
--20mA
--10mA
IB=0
IT00115
6
5
–A
4
C
3
2
2SC5564
80mA
C
90mA
100mA
70m
A
CE
60mA
I
-- V
Collector Current, I
1
0
0 0.2 0.4 0.6 0.8 1.0
Collector-to-Emitter Voltage, VCE–V
I
-- V
6
C
BE
2SC5564
VCE=2V
5
50mA
40mA
30mA
20mA
10mA
IB=0
IT00116
–A
--4
C
--3
--2
Collector Current, I
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.4--1.0 --1.2
Base-to-Emitter Voltage, VBE–V
°C
Ta=75
°C
--25
25°C
IT00117
–A
4
C
3
2
Collector Current, I
1
Ta=75°C
0
0 0.2 0.4 0.6 0.8 1.41.0 1.2
Base-to-Emitter Voltage, VBE–V
°C
--25
25°C
IT00118
No.6305–2/5
Page 3
1000
FE
DC Current Gain, h
100
2SA2011/2SC5564
h
h
-- I
FE
7
5
3
2
Ta=75°C
25°C
C
2SA2011
VCE=--2V
1000
FE
7
5
3
2
Ta=75°C
25°C
--25°C
--25°C
100
7
5
3
2
7
5
DC Current Gain, h
3
2
FE
-- I
C
2SC5564
VCE=2V
10
--0.01
--1000
7
5
3
2
(sat) – mV
CE
--100
7
5
3
2
--10
Collector-to-Emitter
Saturation Voltage, V
7
5
23 57 23 57 23 57
--0.01 --0.1
--1000
7
5
3
2
(sat) – mV
CE
--100
7
5
3
2
Collector-to-Emitter
Saturation Voltage, V
--10
--10
23 57 23 57 23 57
--0.01 --0.1
7
5
325
73257 3257
Collector Current, IC–A
VCE(sat) -- I
--1.0
C
°C
Ta=75
°C
--25
Collector Current, IC–A
VCE(sat) -- I
--1.0 --10
C
°C
Ta=75
25°C
°C
--25
Collector Current, IC–A
VBE(sat) -- I
--1.0 --10
C
IT00119
2SA2011
IC / IB=20
25°C
IT00121
2SA2011
IC / IB=50
IT00122
2SA2011
IC / IB=50
10
--10--0.1
0.01
1000
7
5
3
2
325
73257 3257
Collector Current, IC–A
VCE(sat) -- I
1.0
C
100.1
IT00120
2SC5564
IC / IB=20
(sat) – mV
CE
100
7
5
3
2
10
Collector-to-Emitter
Saturation Voltage, V
7
5
23 57 23 57 23 57
0.01 0.1
1000
7
5
3
2
(sat) – mV
Collector Current, IC–A
VCE(sat) -- I
°C
Ta=75
°C
--25
1.0 10
C
25°C
IT00123
2SC5564
IC / IB=50
CE
100
7
5
3
2
Collector-to-Emitter
Saturation Voltage, V
10
23 57 23 57 23 57
0.01 0.1
10
7
5
Collector Current, IC–A
VBE(sat) -- I
°C
Ta=75
--25°C
1.0 10
C
2SC5564
IC / IB=50
25°C
IT00124
3
2
(sat) – V
BE
--1.0
7
5
3
2
Base-to-Emitter
Saturation Voltage, V
--0.1
23 57 23 57 23 57
--0.01 --0.1 --1.0 --10
Ta=--25°C
75°C
Collector Current, IC–A
25°C
IT00125
3
2
(sat) – V
BE
1.0
7
5
3
2
Base-to-Emitter
Saturation Voltage, V
0.1
23 57 23 57 23 57
0.01 0.1 1.0 10
Ta=--25°C
75°C
25°C
Collector Current, IC–A
IT00126
No.6305–3/5
Page 4
100
2SA2011/2SC5564
Cob -- V
7
5
3
2
CB
2SA2011
f=1MHz
100
7
5
3
2
Cob -- V
CB
2SC5564
f=1MHz
10
Output Capacitance, Cob – pF
1.0
1000
– MHz
T
100
10
Gain-Bandwidth Product, f
1.0
--10
–A
C
--1.0
--0.1
Collector Current, I
--0.01
2.0
7
5
3
2
--1.0
7
5
3
2
7
5
3
2
7
5
3
2
2573
--0.01
2
I
CP
7
5
I
C
3
2
7
5
3
2
7
5
2SA2011
3
Tc=25°C
2
Single pulse
23 57
Collector-to-Base Voltage, VCB-- V
f
-- I
T
C
--10
2SA2011
VCE=--2V
2573
--0.1
Collector Current, IC–A
--1.0
2573
A S O
100ms
Collector-to-Emitter Voltage, VCE–V
--1.0--0.1 --10
P
1ms
10ms
DC operation
25372537
-- Ta
C
100
500
µs
2SA2011 / 2SC5564
µs
IT00127
IT00129
2
IT00131
--10
10
7
5
3
Output Capacitance, Cob – pF
2
2
3
1.0
1000
– MHz
T
100
10
Gain-Bandwidth Product, f
1.0
10
–A
C
1.0
0.1
Collector Current, I
0.01
4.0
3.5
1.0
7
5
3
2
7
5
3
2
7
5
3
2
0.01
2
7
5
3
2
7
5
3
2
7
5
3
2
Collector-to-Base Voltage, VCB-- V
2573
I
CP
I
C
2SC5564
Tc=25°C
Single pulse
2537
0.1
Collector-to-Emitter Voltage, VCE–V
23 57
f
-- I
T
C
2573
0.1
Collector Current, IC–A
1.0
A S O
1ms
10ms
100ms
DC operation
2537 2
1.0
P
-- Tc
C
2SA2011 / 2SC5564
10
2573
2SC5564
VCE=2V
500
µs
10
2
IT00128
10
IT00130
100
µs
IT00132
1.5
–W
C
1.3
1.0
0.5
Collector Dissipation, P
0
Mounted on a ceramic board (250mm
2
×0.8mm)
2006040 80 100 140120 160
Ambient Temperature, Ta – ˚C
IT00133
3.0
–W
C
2.5
2.0
1.5
1.0
Collector Dissipation, P
0.5
0
2006040 80 100 140120 160
Case Temperature, Tc – ˚C
IT01536
No.6305–4/5
Page 5
2SA2011/2SC5564
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2000. Specifications and information herein are subject
to change without notice.
PS No.6305–5/5
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