PNP SILICON TRANSISTOR
MP-88
1.Base
2.Collector
3.Emitter
4.Fin (Collector)
1 2 3
15.7 MAX. 3.2±0.2
4.5±0.2
5.0 1.03.4MAX.
20.5MAX.19 MIN.
2.2±0.2
5.45 5.45
1.0±0.2
4
4.7 MAX.
1.5
2.8±0.10.6±0.1
φ
POWER AMPLIFIER
INDUSTRIAL USE
DESCRIPTION
The 2SA1988 is PNP Silicon Power Transistor that
designed for audio frequency power amplifier.
FEATURES
• High Voltage VCEO = −200 V
• DC Current Gain h
• TO-3P Package
FE = 70 to 200
DATA SHEET
Silicon Power Transistor
2SA1988
PACKAGE DIMENSIONS
ORDERING INFORMATION
Type Number Package
2SA1988 MP-88
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage VCBO −200 V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current (DC) I
Collector Current (pulse) I
Total Power Dissipantion P
JunctionTemperature T
Storage Tempreature T
*1 PW ≤ 300
µ
s, Duty Cycle ≤ 10 % *2 TC = 25 °C
CEO −200 V
EBO −5.0 V
C (DC) −7.0 A
C (pulse) *1 -10 A
2 *2 100 W
J 150 °C
stg −55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO −50
Emitter Cutoff Current IEBO −50
DC Current Gain hFE1 70 200 − VCE = −5.0 V, IC = −1.0 A ∗
DC Current Gain hFE2 20 − VCE = −5.0 V, IC = −3.5 A ∗
Collector Saturation Voltage VCE (sat) −0.6 −2.0 V IC = −5.0 V, IE = −0.5 V ∗
Base Saturation Voltage VBE (sat) −1.3 −2.0 V IC = −5.0 V, IE = −0.5 V ∗
Gain Band width Product fT 40 MHz VCE = −5.0 V, IC = 1.0 mA
Output Capacitance Cob 270 pF VCB = −10 V, IC = 0, f = 1.0 MHz
∗ Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2 %
µ
AVCB = −200 V, IE = 0
µ
AVEB = −3.0 V, IC = 0
Document No. D11176EJ1V0DS00 (1st edition)
Date Published May 1996 P
Printed in Japan
The information in this document is subject to change without notice.
©
1996
CHARACTERISTICS (TA = 25 °C)
2SA1988
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
S/b Limited
60
Dissipation Limited
40
20
dT - Percentage of Rated Power - %
0
50 100 150
T
C - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
-100
-10
-1
IC(Pulse)
IC(DC)
Dissipation Limited
PW=1ms
S/b Limited
IC - Collector Current - A
TC = 25 °C
Single Pulse
-0.1
-1
V
-10 -100 -1000
CE - Collector to Emitter Voltage - V
10ms
100ms
200ms
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
60
40
20
PT - Total Power Dissipation - W
0
20
40 60 80 100 120 140 160
T
C - Case Temperature - °C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
-12
-10
-8
-6
-4
IC - Collector Current - A
-2
0
V
-10
CE - Collector to Emitter Voltage - V
IB=120mA
100mA
80mA
60mA
40mA
20mA
-20
Pulsed
-30
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
1
Rth (J-C)
0.1
rth(t) - Transient Thermal Resistance - °C/W
0.01
1 m 10 m 100 m 1 10 100 1 000 100
µ
Single Pulse
TC=25°C
PW - Pulse Width - s
2
2SA1988
COLLECTOR SATURATION VOLTAGE
BASE SATURATION VOLTAGE
VS
COLLECTOR CURRENT
10
TA=-25°C
25°C
75°C
1.0
150°C
TA= 150°C
0.1
- Base Saturation Voltage - V
- Collector Saturation voltage - V
BE
V
CE
0.01
V
0.01
75°C
25°C
-
25°C
0.1 1.0 10
I
C -
Collector Current - A
OUTOPUT CAPASITANCE
COLLECTOR TO BASE VOLTAGE
V
BE (sat)
IC=10I
Pulsed
V
CE (sat)
VS
E
=0
I
f=1MHz
AND
DC CURRENT GAIN
VS
COLLECTOR CURRENT
B
1 000
TA = 150
75
25
-25
°C
°C
°C
°C
VCE =-5V
Pulsed
100
- DC Current Gain
FE
h
10
-0.01
-0.1
-1.0 -10
IC - Collector Current - A
1 000
100
- Output Cpacitance - pF
ob
C
10
-0.1
-1.0 -10 -100 -1000
V
CB -
Collector to Base Voltage -V
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual C10535E
Semoconductor device package manual C10943X
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X10679E
3
2SA1988
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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