Datasheet 2SA1973 Datasheet (SANYO)

Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications
Ordering number:ENN5613
2SA1973/2SC5310
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
0.4
Features
· Adoption of FBET, MBIT processes.
· Large current capacitance.
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· Ultrasmall package facilitates miniaturization in end products.
Specifications
( ) : 2SA1973 Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
egatloVrettimE-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)esluP(tnerruCrotcelloCI
tnerruCesaBI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC OEC OBE
C
PC
B
Mounted on a glass-epoxy board (20×30×1.6mm)
C
Package Dimensions
unit:mm
2018B
[2SA1973/2SC5310]
3
1
0.95
0.95
1.9
2.9
0.5
1.5
2
0.5
0.8
0.16
2.5
0 to 0.1
1 : Base
1.1
2 : Emitter 3 : Collector SANYO : CP
03)–(V
52)–(V
6)–(V
1)–(A
3)–(A
002)–(Am 052Wm
˚C ˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
niaGtnerruCCDh
V
OBC OBE
EF
BC
V
BE
V
EC
I,V02)–(=
0=1.0)–(Aµ
E
I,V3)–(=
0=1.0)–(Aµ
C
I,V2)–(=
C
Am001)–(=*531*004
nimpytxam
* : The 2SA1973/2SC5310 are classified by 100mA hFE as follows : Continued on next page.
knaR5 6
h
EF
072ot531004ot002
Marking : 2SA1973 : NS
2SC5310 : NN
60100TS (KOTO) TA-1556 No.5613–1/4
sgnitaR
tinU
Page 2
2SA1973/2SC5310
Continued on preceding page.
retemaraPlobmySsnoitidnoC
tcudorPhtdiwdnaB-niaGf
ecnaticapaCtuptuOboCV
egatloVnoitarutaSrettimE-ot-rotcelloCV
egatloVnoitarutaSrettimE-ot-esaBV
egatloVnwodkaerBesaB-ot-rotcelloCV
egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVnwodkaerBesaB-ot-rettimEV
emiTNO-nruTt
emiTegarotSt
emiTllaFt
Switching Time Test Circuit
I
V
R
B1
I
B2
1k
+
100µF 470µF
R
+
OUTPUT
L
PW=20µs D.C.≤1%
INPUT
50
T
EC EB
no gts
f
V
EC BC
)tas(I
C
)tas(I
C
I
OBC)RB(
C
I
OEC)RB(
C
I
OBE)RB(
E
I,V01)–(=
C
I,Am005)–(= I,Am005)–(=
I,Aµ01)–(=
E
R,Am1)–(=
I,Aµ01)–(=
C
Am05)–(=051zHM
zHM1=f,V01)–(=91)23(Fp
B B
EB
Am52)–(= Am52)–(=58.0)–(2.1)–(V
0=03)–(V
= 52)–(V
0=6)–(V
tiucriCtseTdeificepseeS tiucriCtseTdeificepseeS tiucriCtseTdeificepseeS
sgnitaR
nimpytxam
)051–()003–(Vm
001002Vm
06)06(sn )053(
005
52)52(sn
tinU
sn sn
VBE=--5V
20IB1= --20IB2= IC=500mA
(For PNP, the polarity is reversed.)
I
--1.0
--0.8
C
–A
C
--0.6
--0.4
Collector Current, I
--0.2
0
0 --0.8 --2.0--1.6--0.4 --1.2
Collector-to-Emitter Voltage, VCE–V
I
--1000
--800
C
-- V
-- V
CE
BE
VCC=12V
--6mA
--4mA
--2mA
=0
I
B
2SA1973 Pulse
ITR08234
2SA1973 VCE=--2V Pulse
I
1.0
0.8
C
–A
C
0.6
0.4
Collector Current, I
0.2
0
0 0.8 1.6 2.00.4 1.2
Collector-to-Emitter Voltage, VCE–V
I
1000
800
C
-- V
-- V
CE
BE
6mA
4mA
2mA
I
B
2SC5310 Pulse
=0
ITR08235
2SC5310 VCE=2V Pulse
–mA
C
--600
--400
Collector Current, I
--200
0
0 --0.2 --0.4 --0.6 --0.8 --1.2--1.0
°C
Ta=75
°C
25
Base-to-Emitter Voltage, VBE–V
--25°C
ITR08236
–mA
C
600
°C
25°C
400
Collector Current, I
200
0
0 0.2 0.4 0.6 0.8 1.21.0
Ta=75
Base-to-Emitter Voltage, VBE–V
°C
--25
ITR08237
No.5613–2/4
Page 3
1000
FE
7
5
3
2
Ta=75°C
25°C
--25
°C
h
FE
-- I
2SA1973/2SC5310
h
C
2SA1973
5
VCE=--2V Pulse
3
FE
2
Ta=75
°C
25°C
--25°C
FE
-- I
C
2SC5310 VCE=2V Pulse
DC Current Gain, h
100
7
5
73
--0.01
1000
7 5
– MHz
3
T
2
100
7 5
3 2
Gain-Bandwidth Product, f
100
10
--10
7
253
73225
--0.1
Collector Current, IC–A
f
-- I
T
C
7
Collector Current, IC–mA
--100
Cob -- V
2537
CB
7325
--1.0
ITR08238
2SA1973 VCE=--10V Pulse
ITR08240
2SA1973 f=1MHz
--1000
100
DC Current Gain, h
7
5
73
0.01
1000
7 5
– MHz
3
T
2
100
7 5
3
2
Gain-Bandwidth Product, f
10
100
7
253
10
73225
Collector Current, IC–A
Collector Current, IC–mA
Cob -- V
0.1
f
-- I
T
C
7325
1.0
ITR08239
2SC5310 VCE=10V Pulse
7
100
2537
1000
ITR08241
CB
2SC5310 f=1MHz
5
3
2
Output Capacitance, Cob – pF
10
--1.0
--1000
2SA1973
7
IC / IB=20
5
Pulse
3 2
(sat) – mV
CE
--100 7 5
3 2
Collector-to-Emitter
Saturation Voltage, V
--10 7
--0.01
Collector-to-Base Voltage, VCB-- V
37732
--10
VCE(sat) -- I
255
C
°C
Ta=75
--25°C
25°C
23 577
Collector Current, IC–A
--0.1
23 2357
5
3
2
Output Capacitance, Cob – pF
10
1.0
ITR08242
5
3 2
(sat) – mV
100
CE
7 5
3 2
Collector-to-Emitter
Saturation Voltage, V
10
--1.0
ITR08244 ITR08245
7
Collector-to-Base Voltage, VCB-- V
2SC5310 IC / IB=20 Pulse
23 577
0.01
37732
VCE(sat) -- I
Ta=75°C
°C
25
0.1
Collector Current, IC–A
°C
--25
23 2357
10
C
255
1.0
No.5613–3/4
ITR08243
Page 4
2SA1973/2SC5310
3
2
VBE(sat) -- I
(sat) – V
BE
--1 .0
°C
--25
7
°C
5
Ta=75
Base-to-Emitter
Saturation Voltage, V
3
7 5
3 2
1.0
–A
7
C
5 3
2
0.1 7 5
3
Collector Current, I
2
0.01 7
5
2537253253
23 577
--0.01
I
CP
I
C
Collector Current, IC–A
DC operation
Ta=25°C Single pulse
Mounted on a glass-epoxy board (20×30×1.6mm)
For PNP, the minus sign (–) is omitted.
7
1.0
Collector-to-Emitter Voltage, VCE–V
--0.1
A S O
25°C
23 2357
C
2SA1973
3
VBE(sat) -- I
IC / IB=20 Pulse
2
C
2SC5310 IC / IB=20 Pulse
(sat) – V
BE
1.0
7
5
Base-to-Emitter
Saturation Voltage, V
–mW
C
280
250 240
200
160
120
3
--1 .0
ITR08246
2SA1973 / 2SC5310 2SA1973 / 2SC5310
PT=100
1ms
10ms
µs
0.01
23 577
°C
--25
°C
0.1
P
C
25°C
23 2357
-- Ta
1.0
Ta=75
Collector Current, IC–A
2SA1785 / 2SC4645
Mounted on a glass-epoxy board (20
ITR08247
×30×1.6mm)
80
Collector Dissipation, P
40
0
10
ITR08248
2006040 80 100 140120 160
Ambient Temperature, Ta – ˚C
ITR08249
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of June, 2000. Specifications and information herein are subject to change without notice.
PS No.5613–4/4
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