ATMEL U2896B User Manual

查询U2896B 供应商

Modulation PLL for GSM, DCS and PCS Systems

Description

The U2896B is a monolithic integrated circuit manufactured using Atmel Wireless & Microcontrollers’ advanced silicon bipolar UHF5S technology. The device integrates a mixer, an I/Q modulator, a phase-frequency detector (PFD) with two synchronous programmable dividers, and a charge pump. The U2896B is designed for cellular phones such as GSM900, DCS1800, and PCS1900, applying a transmitter architecture at which the VCO operates at the TX output frequency. No duplexer

is needed since the out-of-band noise is very low. The U2896B exhibits low power consumption. Broadband operation provides high flexibility for multi-band frequency mappings. The IC is available in a shrinked small-outline 36-pin package (SSO36).

Electrostatic sensitive device. Observe precautions for handling.

U2896B

Features

 Supply voltage range 2.7 V to 5.5 V  Current consumption 40 mA  Power-down functions  High-speed PFD and charge pump (CP)  Small CP saturation voltages (0.5/0.6 V)  Programmable LO divider and CP polarity  Low-current standby mode

Block Diagram

I NI Q NQ PU NMIXOMIXO

56

M 1:2 1:4

90°

Modulator

MDLO

NMDLO

MDO

NMDO

VS1 GND1

3 4

7 8

LO

Benefits

 Novel TX architecture saves filter costs  Extended battery operating time without duplexer  Less board space (few external components)  VCO control without voltage doubler  Small SSO36 package  One device for all GSM bands

PUMIXMIXLO

32 3323353621

V

Ref

34 25

Mixer

24

31 29

28 30

NMIXLO VS3

RF NRF

GND3

ND

NND

RD

NRD

Rev. A3, 05-Oct-00

22 21

15 16

N

1:2

MUX

R

1:2

Mode control

17

MC GND2

Figure 1. Block diagram

PFD

27

VS2

26

Charge

pump

1413

CPCL CPCH

VSP

10

CPO

11

GNDP

12

PCH

20

1 (13)

U2896B

Ordering Information

Extended Type Number Package Remarks

U2896B-MFCG3 SSO36 Taped and reeled

Pin Description

NI

MDLO

NMDLO

GND1

VSI

MDO

NMDO

SUB

VSP

CPO

GNDP

CPCL

CPCH

RD

NRD

MC

CGNDP

I

1

2

3

4

5

1)

6

7

8

9

10

11

12

13

14

15

16

17

18 19

Figure 2. Pinning

14892

36

35

34

33

32

31

30

29

28

27

26

25

24

23

22

21

20

Q

NQ

PUMIX

MIXO

NMIXO

1)

VS3

GND3

RF

NRF

1)

VS2

GND2

MIXLO

NMIXLO

PU

ND

NND

PCH

CSU

Pin Symbol Function

1 2 3 4 5 6 7 8

9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36

1)

I

In-phase baseband input

NI

MDLO

NMDLO

GND1 VS1

MDO

NMDO

SUB VSP CPO

GNDP

CPCL

CPCH

RD

NRD

MC

CGNDP

CSU PCH

NND

ND

PU

NMIXLO

MIXLO

GND2 VS2

NRF

RF GND3 VS3

NMIXO

MIXO

PUMIX

NQ

Between the Pins VS1, VS2 and VS3 the allowed maximum voltage is ≤ 200 mV

Complementary to I I/Q-modulator LO input Complementary to MDLO Ground

1)

Supply I/Q modulator I/Q modulator Complementary to MDO Substrate, connected to GND Supply charge pump Charge-pump output Ground Charge-pump current control GSM1800 Charge-pump current control GSM900 R-divider input Complementary to RD Mode control GND for charge-pump blocking (optional) Charge-pump blocking (optional) Precharge for loop filter (optional) Complementary to ND N-divider input Power-up. whole chip, except mixer Complementary to MIXLO Mixer LO input Ground

1)

Supply (MISC) Complementary to RF Mixer RF input Ground

1)

Supply mixer Complementary to MIXO Mixer output Power-up mixer Complementary to Q

Q

Quad-phase baseband input

2 (13)

Rev. A3, 05-Oct-00

Absolute Maximum Ratings

pp y

VS1

pp y

VS2

pp y

VS3

pp y

VSP

Parameters Symbol Value Unit

Supply voltage VS1, VS2, VS3 Supply voltage charge pump VSP Voltage at any input Current at any input / output pin except CPC CPC output currents Ambient temperature Storage temperature

Operating Range

Parameters Symbol Value Unit

Supply voltage Supply voltage Ambient temperature

V

VS#

V

VSP

V

Vi#

| II# | | IO# |

| I

|

CPC

T

amb

T

stg

V

VS#

V

VSP

T

amb

–0.5  V

–40 to +125

 V

VSP

5.5  V

Vi#

2 5

–20 to +85

2.7 to 5.5

–20 to +85

U2896B

V V

VS#

+0.5

V mA mA

°C °C

V

°C

Thermal Resistance

Parameters Symbol Value Unit

Junction ambient SSO36

R

thJA

130

Electrical Characteristics

VS = 2.7 to 5.5 V, T

Parameters Test Conditions / Pin Symbol Min. Typ. Max. Unit

DC supply

Supply voltages VS# Supply voltage VSP Supply current I

Supply current I

N & R divider inputs ND, NND & RD, NRD

N:1 divider frequency R:1 divider frequency Input impedance Input sensitivity (diff.) Input capacitance

= –20°C to +85°C, final test at 25°C

amb

V

VS1

= V

VS1

Active (VPU = VS)

VS2

= V

VS3

Standby (VPU = 0)

VS2

Active (VPU = VS) Standby (VPU = 0)

VS3

VSP

Active (V Standby (V

1)

Active (VPU = VS, CPO open)

PUMIX

= VS)

= 0)

Standby (VPU = 0)

50-Ω source 50-Ω source Active & standby 50-Ω source Active & standby

V

VS#

V

VSP

I

VS1A

I

VS1Y

I

VS2A

I

VS2Y

I

VS3A

I

VS3Y

I

VSPA

I

VSPY

f

ND

f

RD

ZRD, Z

VRD, V

CRD, C

ND

2.7

V

– 0.3

VS#

13

14

11

2.2

100 100

see figure 11

2)

10

5.5

5.5 21 20 22 20 17 30

2.8 20

600 600

200

0.5

K/W

mA

µA

mA

µA

mA

µA

mA

µA

MHz MHz

mV

V V

rms

pF

Rev. A3, 05-Oct-00

3 (13)

U2896B

Á

Electrical Characteristics (continued)

VS = 2.7 to 5.5 V, T

Parameters Test Conditions / Pin Symbol Min. Typ. Max. Unit

Phase-frequency detector (PFD)

PFD operation

ББББББ

Frequency comparison

4)

only

ББББББ

I/Q modulator baseband inputs I, NI & Q, NQ

DC voltage MD_IQ AC voltage

5)

AC voltage

I/Q modulator LO input MDLO

MDLO Input impedance

ББББББ

Input level

I/Q modulator outputs MDO, NMDO

DC current Internal pull-up resistor Voltage compliance MDO output level

ББББББ

(differential)

ББББББ

Carrier suppression

ББББББ

Sideband suppression

6)

ББББББ

IF spurious Noise

6)

Frequency range

Mixer (900 MHz)

RF input level Output resistance LO spurious at

RF/NRF port

ББББББ

MIXLO input level MIXO

= –20°C to +85°C, final test at 25°C

amb

fND = 600 MHz, N = 2

БББББ

fRD = 600 MHz, R = 2 fND = 600 MHz, N = 2

fRD = 450 MHz, R = 2

БББББ

Referred to GND Frequency range Referred to GND

Differential (preferres)

Frequency range

5a)

@ 900 MHz

БББББ

active & standby 50-Ω source

V

, V

MDO

V

, V

MDO

615 Ω to VS

БББББ

1.5 pF external load Mode 2

БББББ

NMDO

6)

= VS

= VC

Mode 1 and 3

6)

Measured differential

БББББ

Pins 7 and 8

Measured differential

БББББ

Pins 7 and 8

fLO ± 3  f

mod

@ 400 kHz off carrier

900 MHz

@P9 @ P9RF = –15 dBm

БББББ

MIXLO

= –10dBm

0.05 to 2 GHz

Frequency range

f

БББББ

VC

БББББ

PFD

f

FD

V

I, VNI, VQ, VNQ

f

IO

AC

I,

Q, ACNQ

AC

DI,

f

MDLO

Z

MDLO

P

MDLO

, I

NMDO

, R

NMDO

, VC

P

MDO

P

MDO

CS

MDO

SS

MDO

SP

MDO

N

MDO

f

MDO

P9

RF

, R

NMIXO

SP9

RF

MIXLO

f

MIXO

NI,

I

R

MIXO

AC

MDO MDO MDO

P9

DQ

NMDOVS

50

Á

ÁÁÁÁÁÁ

300

400

ÁÁÁÁÁÁÁÁ

1.35

VS1/2

VS1/2+0.1

0

200

400

100

ÁÁÁÁ

–20

540||1.5

–10

900

ÁÁÁÁÁÁ

0.8

615

– 0.7

Á

113

Á

ÁÁ

ÁÁÁ

170

ÁÁÁ

57

–32

Á

–35

Á

–35

ÁÁ

–40

ÁÁ

–50

ÁÁÁÁÁÁ

–45

–115

100

–23

450

–17

650

–40

ÁÁÁÁÁÁÁÁ

–22

50

–12 450

1

–5

5.5

85

MHz

ÁÁ

MHz

ÁÁ

V

MHz

mV

MHz

Ω||pF

dBm

mA

Ω

V

ÁÁ

mV

ÁÁ

mV

dBc

dBc/Hz

MHz

dBm

Ω

dBm

ÁÁ

dBm MHz

pp

pp pp

4 (13)

Rev. A3, 05-Oct-00

U2896B

Á

Electrical Characteristics (continued)

VS = 2.7 to 5.5 V, T

Parameters Test Conditions / Pin Symbol Min. Typ. Max. Unit

Output level 7)

ББББББ

differential

ББББББ

Carrier suppression

Mixer (1900 MHz)

Output resistance RF input level LO spurious at

ББББББ

RF/NRF ports MIXLO input level

MIXO

Output level 8) differen-

ББББББ

tial

ББББББ

Carrier suppression

Charge-pump output CPO (V

Pump-current pulse Pump-current pulse Sensivity to V

ББББББ

V

voltage range

CPO

ББББББ

VSP

Mode control

Mode 3 Mode 2 Mode 1 Power-up input PU (power-up for all functions, except mixer) Settling time

ББББББ

High level Low level High-level current Low-level current

Power-up input PUMIX (power-up for mixer only)

Settling time

ББББББ

High level Low level High-level current Low-level current

ББББББ

= –20°C to +85°C, final test at 25°C

amb

@P9

ББББББ

@P9

= –15dBm

MIXLO

IF = 200 MHz IF = 400 MHz

= –15dBm

MIXLO

0.5 to 2 GHz @ P19

ББББББ

@ P19RF = –15 dBm

MIXLO

= –10 dBm

0.05 to 2 GHz

@ P19

ББББББ

@ P19

VSP

R

CPCH

R

CPCL

I

CPO

|

I

CPO

| I

|

CPO

ББББББ

degradation < 10% (V

ББББББ

VSP

= –17 dBm

MIXLO

IF = 200 MHz IF = 400 MHz

= –17 dBm

MIXLO

= 5 V; V

9)

= 2.4 kΩ

10)

= 4.7 kΩ

||

CPO

V

V

VSP

= 2.7 V to 5 V)

= 2.5 V)

VSP

|

VMC < 0.5 V VMC = VS – 1 V VMC = VS

Output power within 10% of steady state values

ББББББ

Active Standby Active, V Standby, V

PUH

PUL

= 2.2 V

= 0.4 V

Output power within 10% of steady state values

ББББББ

Active Standby Active, V

PUMIXH

= 2.2 V

Standby,

ББББББ

V

PUMIXL

= 0.4 V

ÁÁÁÁ

P9

MIXO

P9

ÁÁÁÁ

MIXO

CS9

MIXO

R

, R

MIXO

ÁÁÁÁ

P19

SP19

P19

P19 P19

CS19

| I

CPO_H

| I

CPO_L

S

V

I I I

S

V V

I I

t

V

PUMIXH

V

PUMIXL

I

PUMIXH

I

PUMIXL

NMIXO

RF

MIXLO

MIXO MIXO

MIXO

|

ICPO

CPO

MC MC MC

PU

PUH

PUL PUH PUL

setl

ÁÁ

226 113

ÁÁ

–20

650

–23

–17 –40

ÁÁÁÁÁÁÁÁ

–22

ÁÁ

226

ÁÁ

113

–12

ÁÁ

–20

3.0

1.4

ÁÁÁÁÁÁÁÁ

0.5

ÁÁ

4.0

2.0

ÁÁ

–30

V

VSP

ÁÁ

–200 10 10

5

ÁÁÁÁÁ

ÁÁ

2.0 0

–1

5

ÁÁÁÁÁ

ÁÁ

2.0 0

0.1

–1

ÁÁ

ÁÁÁÁÁ

5.0

2.6

0.1

20 20

10

0.4 70 20

10

0.4 70 20

–0.6

ÁÁ

mV

pp

mV

ÁÁ

pp

dBc

Ω

dBm dBm

ÁÁ

dBm

ÁÁ

mV

pp

ÁÁ

mV

pp

dBc

mA mA

–

ÁÁ

V

ÁÁ

µA µA µA

µs

ÁÁ

V V

µA µA

µs

ÁÁ

V V

µA µA

ÁÁ

Rev. A3, 05-Oct-00

5 (13)

U2896B

1)

Mean value, measured with FND = 151 MHz, FRD = 150 MHz, current vs. time, figure 3

2)

For optimized noise performance this voltage level may be higher

4)

PFD can be used as a frequency comparator up to 300 MHz for loop acquisition

5)

Single-ended operation (complementary baseband input is AC-grounded) leads to reduced linearity (degrading suppression of odd harmonics)

5a)

For all 3 active modes and standby, measured at Pin 3 at 900 MHz with Pin 4 AC gounded

6)

I/Q baseband input: differential sin and cos signals with 200 mV amplitude (400 mVpp) and 100 kHz frequency from a low-ohmic source (< 1 kΩ). MDLO drive power is – 10 dBm, available power from a 50-Ω generator. No DC offset between I and NI (or Q and NQ) is allowed and no amplitude differences between I/NI and Q/NQ. For nonideal IQ-input signals an application note is available on request.

7)

At 1 dB input compression point (–17 dBm) and output loaded with C = 1.5 pF to GND

8)

– 1 dB compression point C = 1.5 pF to GND

9)

R

: external resistor to GND for charge-pump current control (MODE 3 only Pin 14 active)

10)

CPCH

R

: external resistor to GND for charge-pump current control (MODE 1 and 2 only Pin 13 active)

CPCL

Supply Current of the Charge Pump I

Due to the pulsed operation of the charge pump, the current into the charge-pump supply Pin VSP is not constant. Depending on I (see figure 6) and the phase difference at the phase-detector inputs, the current I over time varies. Basically, the total current is the sum of the quiescent current, the charge-/discharge current, and – after each phase comparison cycle – a current spike (see

VSP

vs. Time

VSP

I

VSP

2.5 I

1.5 I

Up

Down

CPCO CPCO

figure 3).

Table 1. Internal current |I

R

CPC

| vs. R

(typical values)

CPC

|I

CPCO

19.2 kΩ 0.5 mA

9.6 kΩ 1 mA

4.8 kΩ 2 mA

I

CPCO

I

|

CPO

–I

CPCO

Figure 3. Supply current of the charge pump

t

14913

2.4 kΩ 4 mA

Mode Selection

The device can be programmed to different modes via an external resistor RMODE (including short, open) from Pin MC to VS2. The mode is distinguished from specific N-, R-divider ratios, and the polarity of the charge-pump selection.

Table 2. Mode selection

Mode Selection

1 VMC = VS2 + 0 V/ – 0.2 V 1:2 1:2 1:2 Source Sink GSM1900 x 2 VMC = (VS2 – 1 V) +/ – 0.2 V 1:2 1:2 1:4 Source Sink GSM1800 x 3 VMC < 0.5 V 1:2 1:2 1:2 Sink Source GSM900 x

1)

Divider CPO Current Polarity Application CPCH

N R M fn < fR

2)

fn > f

R

Active

CPCL

Active

1)

See figure 13

2)

Frequencies referred to PDF input

6 (13)

Rev. A3, 05-Oct-00

Equivalent Circuits at the IC’s Pins

U2896B

I,Q

NI, NQ

V

Bias_MDLO

2230 Ω2230 Ω

MDLO

V

Ref_input

V

Ref_MDLO

V

Baseband inputs LO input Output

Figure 4. I/Q modulator

RF

1 kΩ

V

Bias_RF

890 Ω 890 Ω

1 kΩ

V

Bias_LO

1.6 kΩ 1.6 kΩ

650 

NMIXO

NRF

MIXLO

2 x 615 

VS1

MDO NMDO

Ref_output

GND

14893

VS3

650 

MIXO

CPCL CPCH

V

Ref_RF

V

Ref_LO

GND

RF input

LO output

Output

14894

Figure 5. Mixer

4

VSP

4

up

Ref

V

Ref

n

= Transistor with an emitter-area factor of “n”

n

Ref

n

down

I

CPO

I

GNDP

14896

Figure 6. Charge pump

Rev. A3, 05-Oct-00

7 (13)

U2896B

ND/RD

NND/NRD

VS2

2 kΩ 2 kΩ

V

Figure 7. Dividers

Ref_div

Logic

VS2

GND

14897

M-divider

MUX

PU, PUMIX

20 kΩ

Figure 9. Power-up

C (U) is a non-linear junction capacitance

Figure 10. ESD-protection diodes

R

c

RD / ND

C

R

d

c

C

d

R

c

NRD / NND

GND

14899

≅

C (U)

0.5 pF @ 2 V

14900

MC

GND

18 kΩ

Figure 8. Mode control

C

c

Cc = 0.6 pF Rc = 4.5 k / [1 + (f (MHz) / 600)3] Cd = 1.3 pF Rd = 7.0 k / [1 + (f (MHz) / 600)3]

Model valid up to 1.5 GHz

Figure 11. Smal signal equivalent circuit for the R- and

N-dividers (Pins 15/16 and 21/22)

8 (13)

Rev. A3, 05-Oct-00

Application Hints

Interfacing

U2896B

Precharge (Optional)

For some baseband ICs it may be necessary to reduce the I/Q voltage swing so that it can be handled by the U2896B. In those cases, the following circuitry can be used.

R1

II

R1

Baseband IC

Figure 12. Interfacing the U2896B to I/Q baseband circuits

NI

Q

R1

NQ

R1

R2

C

NI

U2896B

Q

C

NQ

14901

Due to a possible current offset in the differential baseband inputs of the U2896B the best values for the carrier suppression of the I/Q modulator can be achieved with voltage driven I/NI-, and Q/NQ-inputs. A value of R

= R2/2 parallel to RS should be realized that is

source

below 1.5 kΩ. RS is the sum of R1 (above drawing) and the output resistance of the baseband IC. This results in R

= (R2 × RS) / (2 RS + R2).

source

Charge-Pump Blocking (Optional)

A capacitor of 100 pF – 1 nF may be connected between CSU (charge-pump supply) and CGNDP (internal GND of charge pump).

By applying a “high” signal to PCH (Pin 20) the loop filter at CPO is precharged to approximately V

Supply

/2.

Mode Control

VS2

18k

Mode 1

Mode 2

Mode 3

Figure 13. Application examples for programming

2.8 V

different modes

10k

MC

GND

VS2

10k

MC

18k

GND

VS2

MC

18k

GND

16605

Rev. A3, 05-Oct-00

9 (13)

U2896B

Test Circuit

V4

1.35V

200MHz

–10dBm

3V, 5V

200.1MHz –15dBm

3V

1.5V

V7

R1

R2

R5

R6

R3

R4

R7

V5

450 mV

C1

C2

C5

C6

pp

C4

C3

10

11

12

13

14

15

16

V2

450 mV

1

2

3

4

5

6

7

8

9

36

35

34

33

32

31

30

29

28

C7

C8

C10

C11

R11

pp

V3

R12

C9

1.35V

3V

900MHz

–15dBm

U2896B

27

C12

3V

26

25

C13

C14

R13

1100MHz

–15dBm

24

23

C15

3V

22

200MHz

–15dBm

21

C16

R14

10 (13)

MC

Mode 1: 2.7 V Mode 2: 1.7 V Mode 3: 0 V

MC

17

n.c.

18 19

Figure 14. Test circuit

20

n.c.

Rev. A3, 05-Oct-00

Application Circuit for DCS1800 (1710 – 1785 MHz)

U2896B

Baseband

2nd LO

–10dBm

3V

Tuning voltage

3V, 5V

C8

R1

R2

R4

C7

C9

C10

R3

C6

L2L1

R5

R6

C4

C2

C3

C5

C1

C11

10

11

12

13

14

15

16

1

2

3

4

5

6

7

8

9

36

35

34

33

32

31

30

29

28

C12

C14

C15

R9

R8

R10

C13

VCO

880 to 915MHz

1710 to 1785MHz

–20dBm

Baseband

3V

U2896B

27

C16

3V

26

25

24

23

22

21

C17

C18

C19

C20

L3

1st LO

–15dBm

3V

C29

VS2

10k

18k

17

18

Figure 15. Application circuit

Measurements

Modulation-Loop Settling Time

As valid for all PLL loops, the settling time depends on several factors. Figure 16 is an extraction from measurements performed in an arrangement like the application circuit. It shows that a loop settling time of a few µs can be achieved.

Rev. A3, 05-Oct-00

20

PCH

19

C21 (optional, 100 pF – 1nF)

Modulation Spectrum & Phase Error

CPC: 1 kΩ to GND

CPC ‘open’

Vertical: VCO tuning voltage 1 V/Div Horizontal: Time 1µs/Div

Figure 16.

14904

11 (13)

U2896B

Package Information

Package SSO36

Dimensions in mm

0.2

0.5

36 19

118

9.6

9.1

8.45

1.3

0.15

0.05

technical drawings according to DIN specifications

5.6

5.2

4.5

4.3

0.12

6.6

6.3

13047

12 (13)

Rev. A3, 05-Oct-00

U2896B

Ozone Depleting Substances Policy Statement

It is the policy of Atmel Germany GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.

Atmel Germany GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Atmel Germany GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

9.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use Atmel Wireless & Microcontrollers products for any unintended

or unauthorized application, the buyer shall indemnify Atmel Wireless & Microcontrollers against all claims,

costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death

associated with such unintended or unauthorized use.

Data sheets can also be retrieved from the Internet: http://www.atmel–wm.com

Rev. A3, 05-Oct-00

Atmel Germany GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2594, Fax number: 49 (0)7131 67 2423

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ATMEL U2896B User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual