ATMEL U2896B User Manual

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Modulation PLL for GSM, DCS and PCS Systems

Description

The U2896B is a monolithic integrated circuit manufactured using Atmel Wireless & Microcontrollers’ advanced silicon bipolar UHF5S technology. The device integrates a mixer, an I/Q modulator, a phase-frequency detector (PFD) with two synchronous programmable dividers, and a charge pump. The U2896B is designed for cellular phones such as GSM900, DCS1800, and PCS1900, applying a transmitter architecture at which the VCO operates at the TX output frequency. No duplexer

is needed since the out-of-band noise is very low. The U2896B exhibits low power consumption. Broadband operation provides high flexibility for multi-band frequency mappings. The IC is available in a shrinked small-outline 36-pin package (SSO36).

Electrostatic sensitive device. Observe precautions for handling.

U2896B

Features

 Supply voltage range 2.7 V to 5.5 V  Current consumption 40 mA  Power-down functions  High-speed PFD and charge pump (CP)  Small CP saturation voltages (0.5/0.6 V)  Programmable LO divider and CP polarity  Low-current standby mode

Block Diagram

I NI Q NQ PU NMIXOMIXO

56

M 1:2 1:4

90°

Modulator

MDLO

NMDLO

MDO

NMDO

VS1 GND1

3 4

7 8

LO

Benefits

 Novel TX architecture saves filter costs  Extended battery operating time without duplexer  Less board space (few external components)  VCO control without voltage doubler  Small SSO36 package  One device for all GSM bands

PUMIXMIXLO

32 3323353621

V

Ref

34 25

Mixer

24

31 29

28 30

NMIXLO VS3

RF NRF

GND3

ND

NND

RD

NRD

Rev. A3, 05-Oct-00

22 21

15 16

N

1:2

MUX

R

1:2

Mode control

17

MC GND2

Figure 1. Block diagram

PFD

27

VS2

26

Charge

pump

1413

CPCL CPCH

VSP

10

CPO

11

GNDP

12

PCH

20

1 (13)

U2896B

Ordering Information

Extended Type Number Package Remarks

U2896B-MFCG3 SSO36 Taped and reeled

Pin Description

NI

MDLO

NMDLO

GND1

VSI

MDO

NMDO

SUB

VSP

CPO

GNDP

CPCL

CPCH

RD

NRD

MC

CGNDP

I

1

2

3

4

5

1)

6

7

8

9

10

11

12

13

14

15

16

17

18 19

Figure 2. Pinning

14892

36

35

34

33

32

31

30

29

28

27

26

25

24

23

22

21

20

Q

NQ

PUMIX

MIXO

NMIXO

1)

VS3

GND3

RF

NRF

1)

VS2

GND2

MIXLO

NMIXLO

PU

ND

NND

PCH

CSU

Pin Symbol Function

1 2 3 4 5 6 7 8

9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36

1)

I

In-phase baseband input

NI

MDLO

NMDLO

GND1 VS1

MDO

NMDO

SUB VSP CPO

GNDP

CPCL

CPCH

RD

NRD

MC

CGNDP

CSU PCH

NND

ND

PU

NMIXLO

MIXLO

GND2 VS2

NRF

RF GND3 VS3

NMIXO

MIXO

PUMIX

NQ

Between the Pins VS1, VS2 and VS3 the allowed maximum voltage is ≤ 200 mV

Complementary to I I/Q-modulator LO input Complementary to MDLO Ground

1)

Supply I/Q modulator I/Q modulator Complementary to MDO Substrate, connected to GND Supply charge pump Charge-pump output Ground Charge-pump current control GSM1800 Charge-pump current control GSM900 R-divider input Complementary to RD Mode control GND for charge-pump blocking (optional) Charge-pump blocking (optional) Precharge for loop filter (optional) Complementary to ND N-divider input Power-up. whole chip, except mixer Complementary to MIXLO Mixer LO input Ground

1)

Supply (MISC) Complementary to RF Mixer RF input Ground

1)

Supply mixer Complementary to MIXO Mixer output Power-up mixer Complementary to Q

Q

Quad-phase baseband input

2 (13)

Rev. A3, 05-Oct-00

Absolute Maximum Ratings

pp y

VS1

pp y

VS2

pp y

VS3

pp y

VSP

Parameters Symbol Value Unit

Supply voltage VS1, VS2, VS3 Supply voltage charge pump VSP Voltage at any input Current at any input / output pin except CPC CPC output currents Ambient temperature Storage temperature

Operating Range

Parameters Symbol Value Unit

Supply voltage Supply voltage Ambient temperature

V

VS#

V

VSP

V

Vi#

| II# | | IO# |

| I

|

CPC

T

amb

T

stg

V

VS#

V

VSP

T

amb

–0.5  V

–40 to +125

 V

VSP

5.5  V

Vi#

2 5

–20 to +85

2.7 to 5.5

–20 to +85

U2896B

V V

VS#

+0.5

V mA mA

°C °C

V

°C

Thermal Resistance

Parameters Symbol Value Unit

Junction ambient SSO36

R

thJA

130

Electrical Characteristics

VS = 2.7 to 5.5 V, T

Parameters Test Conditions / Pin Symbol Min. Typ. Max. Unit

DC supply

Supply voltages VS# Supply voltage VSP Supply current I

Supply current I

N & R divider inputs ND, NND & RD, NRD

N:1 divider frequency R:1 divider frequency Input impedance Input sensitivity (diff.) Input capacitance

= –20°C to +85°C, final test at 25°C

amb

V

VS1

= V

VS1

Active (VPU = VS)

VS2

= V

VS3

Standby (VPU = 0)

VS2

Active (VPU = VS) Standby (VPU = 0)

VS3

VSP

Active (V Standby (V

1)

Active (VPU = VS, CPO open)

PUMIX

= VS)

= 0)

Standby (VPU = 0)

50-Ω source 50-Ω source Active & standby 50-Ω source Active & standby

V

VS#

V

VSP

I

VS1A

I

VS1Y

I

VS2A

I

VS2Y

I

VS3A

I

VS3Y

I

VSPA

I

VSPY

f

ND

f

RD

ZRD, Z

VRD, V

CRD, C

ND

2.7

V

– 0.3

VS#

13

14

11

2.2

100 100

see figure 11

2)

10

5.5

5.5 21 20 22 20 17 30

2.8 20

600 600

200

0.5

K/W

mA

µA

mA

µA

mA

µA

mA

µA

MHz MHz

mV

V V

rms

pF

Rev. A3, 05-Oct-00

3 (13)

U2896B

Á

Electrical Characteristics (continued)

VS = 2.7 to 5.5 V, T

Parameters Test Conditions / Pin Symbol Min. Typ. Max. Unit

Phase-frequency detector (PFD)

PFD operation

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Frequency comparison

4)

only

ББББББ

I/Q modulator baseband inputs I, NI & Q, NQ

DC voltage MD_IQ AC voltage

5)

AC voltage

I/Q modulator LO input MDLO

MDLO Input impedance

ББББББ

Input level

I/Q modulator outputs MDO, NMDO

DC current Internal pull-up resistor Voltage compliance MDO output level

ББББББ

(differential)

ББББББ

Carrier suppression

ББББББ

Sideband suppression

6)

ББББББ

IF spurious Noise

6)

Frequency range

Mixer (900 MHz)

RF input level Output resistance LO spurious at

RF/NRF port

ББББББ

MIXLO input level MIXO

= –20°C to +85°C, final test at 25°C

amb

fND = 600 MHz, N = 2

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fRD = 600 MHz, R = 2 fND = 600 MHz, N = 2

fRD = 450 MHz, R = 2

БББББ

Referred to GND Frequency range Referred to GND

Differential (preferres)

Frequency range

5a)

@ 900 MHz

БББББ

active & standby 50-Ω source

V

, V

MDO

V

, V

MDO

615 Ω to VS

БББББ

1.5 pF external load Mode 2

БББББ

NMDO

6)

= VS

= VC

Mode 1 and 3

6)

Measured differential

БББББ

Pins 7 and 8

Measured differential

БББББ

Pins 7 and 8

fLO ± 3  f

mod

@ 400 kHz off carrier

900 MHz

@P9 @ P9RF = –15 dBm

БББББ

MIXLO

= –10dBm

0.05 to 2 GHz

Frequency range

f

БББББ

VC

БББББ

PFD

f

FD

V

I, VNI, VQ, VNQ

f

IO

AC

I,

Q, ACNQ

AC

DI,

f

MDLO

Z

MDLO

P

MDLO

, I

NMDO

, R

NMDO

, VC

P

MDO

P

MDO

CS

MDO

SS

MDO

SP

MDO

N

MDO

f

MDO

P9

RF

, R

NMIXO

SP9

RF

MIXLO

f

MIXO

NI,

I

R

MIXO

AC

MDO MDO MDO

P9

DQ

NMDOVS

50

Á

ÁÁÁÁÁÁ

300

400

ÁÁÁÁÁÁÁÁ

1.35

VS1/2

VS1/2+0.1

0

200

400

100

ÁÁÁÁ

–20

540||1.5

–10

900

ÁÁÁÁÁÁ

0.8

615

– 0.7

Á

113

Á

ÁÁ

ÁÁÁ

170

ÁÁÁ

57

–32

Á

–35

Á

–35

ÁÁ

–40

ÁÁ

–50

ÁÁÁÁÁÁ

–45

–115

100

–23

450

–17

650

–40

ÁÁÁÁÁÁÁÁ

–22

50

–12 450

1

–5

5.5

85

MHz

ÁÁ

MHz

ÁÁ

V

MHz

mV

MHz

Ω||pF

dBm

mA

Ω

V

ÁÁ

mV

ÁÁ

mV

dBc

dBc/Hz

MHz

dBm

Ω

dBm

ÁÁ

dBm MHz

pp

pp pp

4 (13)

Rev. A3, 05-Oct-00