The U2203B-A is a wideband video amplifier IC system
especially designed for use in high-resolution RGB monitors. The IC includes three well matched video
amplifiers, three gated differential amplifiers for black-
Features
D
3 channels, high bandwidth (90 MHz @ –3 dB)
D
Matched attenuators for contrast control
D
Black-level clamping for brightness control
Vs1
1
level clamping and brightness control and the function for
simultaneously contrast control. Separate adjustment of
the maximum gain of each channel is also possible.
D
Independent gain control of each amplifier
D
ESD protection according to MIL-STD. 883
U2203B
28 Vs1
CONTRAST CAP
CONTRAST CAP23
R VIDEO IN
R CLAMP CAP
G VIDEO IN
GROUND
G CLAMP CAP
B VIDEO IN
B CLAMP CAP
Vin REF
CONTRAST1112
4
5
6
7
8
9
10
2.4V
REF
CONTRAST
CONTROL
SUPPLY
REG.
RED
GREEN
BLUE
1k
40
90
1k
40
90
1k
40
90
27 R DRIVE
26 R CLAMP (–)
25 R VIDEO OUT
24 R CLAMP (+)
23 Vs2
22 G DRIVE
21 G CLAMP (–)
20 G VIDEO OUT
19 G CLAMP (+)
18 B DRIVE
17 B CLAMP (–)
13
Vs1
CLAMP GATE
1.4V
REF
14
TELEFUNKEN Semiconductors
Rev . A2, 27-Jan-97
U2203B
Figure 1. Block diagram
95 10749
16 B VIDEO OUT
15 B CLAMP (+)
1 (7)
Page 2
U2203B
Pin Description
V
S1
C
contr
C
contr
V
in, R
C
clamp, R
V
in, G
GND
C
clamp, G
V
in, B
C
clamp, B
V
Bias
V
contr
V
S1
V
Gate
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Figure 2. Pinning
96 12388
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
R
V
V
V
V
R
V
V
V
R
V
V
V
S1
R
R–
out, R
R+
S2
G
G–
out, G
G+
B
B–
out, B
B+
PinSymbolFunction
1V
2C
3C
4V
5C
clamp, R
6V
contr
contr
in, R
in, G
S1
Supply voltage
Contrast cap.
Contrast cap.
Video input (R)
Clamp cap. (R)
ParametersSymbolValueUnit
Supply voltagePins 1, 13, 28 and 23V
Input voltage at all other pinsV
Video output currentPins 16, 20 and 25I
Junction temperatureT
Storage temperature rangeT
Operating Range
ParametersSymbolValueUnit
Ambient temperature rangeT
Supply voltage rangePins 1, 13, 23 and 28VS2, V
2 (7)
amb
V
stg
S
in
13.5V
0 toV
S
V
28mA
j
125°C
–40 to 125°C
0 to 80°C
S1
11.0 to 13.0V
TELEFUNKEN Semiconductors
Rev . A2, 27-Jan-97
Page 3
U2203B
p
Thermal Resistance
ParametersSymbolValueUnit
Junction ambient(DIP28)R
thJA
Electrical Characteristics
Test conditions unless otherwise specified, reference point Pin 7, T
= VS2 = 12 V, V12 = 6 V (contrast); V14 = 0 V (inv. gating); V15 = V19 = V24 = 2 V (brightness)
Pins 1, 13 and 28
Input bias voltagePin 11V
Input bias current Pins 4, 6 and 9I
Switching voltage gating
Pin 14VG “L”0.81.3V
“on”
Switching voltage gating
Pin 14VG “H”1.52.0V
“off”
Switching current gating
”on”
Switching current gating
”off”
Charge current clamping
capacitor
Discharge current clamping
capacitor
Video outputs, V
O
Low levelV
High levelV
Output offset between two
V14 = 0.8 V
Pin 14
V14 = 2.0 V
Pin 14
V
= 0 V
5,8,10
Pins 5, 8 and 10
V
= 5 V
5,8,10
Pins 5, 8 and 10
Pins 16, 20 and 25
= 0 VV
5,8,10
= V
5,8,10
S
V15, V19, V24 = 2 V
amplifiers
V15, V19, V24 = 4 V
Video gainV15 = V19 = V24 = 4 V (brightness); fIN = 1 MHz
Maximum video gainV12 = 12 VG
Middle video gainV12 = 5 VGV
Dynamic gain rangeGVD50dB
Video gain match
(any 2 outputs)
V12 = 12 V
= 5 V
V
12
= 2.2 V 1)
V
12
GVM
GVM
GVM
Video bandwidth
unpeaked (C = 0 pF)
optimal peaking
V12 = 12 V (f
= 12 V (f
V
12
–3dB
–3dB
)
)
(C = 27 pF)
Video cross talkfIN = 10 kHz
= 10 MHz
f
IN
CT
CT
= 25°C,
amb
I
S1
inREF
inREF
2.32.5V
1510
IG “L”–1–0.01
IG “H”58
ICL+0.81.01.2mA
ICL––1.2–1.0–0.8mA
O“L”
V
O“H”
D
V
O
8.08.6V
(2 V)
D
V
O
(4 V)
Vmax
mid
max
mid
–30
16.017.7dB
BWV
BWV
P
10kHz
10MHz
–50
46K/W
6070mA
0.81.0V
±50mV
±50mV
8.5dB
±0.1
±0.1
±0.3
65
90
MHz
MHz
–47
m
m
m
dB
dB
dB
dB
dB
A
A
A
1)Measured 30 dB below maximum gain
TELEFUNKEN Semiconductors
3 (7)
Rev . A2, 27-Jan-97
Page 4
U2203B
VS(+12V)
R Video in
75
W
G Video in
75
W
B Video in
75
W
100 mF
5 mF
5 mF
5 mF
5 mF
10 k
100 nF
W
10 k
W
10 k
100 nF
100 nF
100 nF
W
100 nF
1
2
3
4
5
6
7
9
10
U2203B
28
27
26
25
24
23
22
218
20
19
51
51
W
100
W
C
R Clamp (–)
To cascade
driver (R)
390
W
100 nF
W
C
390
W
91
100
W
W
G Clamp (–)
To cascade
driver (G)
Black level
gate I/P
93 7632
4 (7)
10 k
W
100 nF
11
12
13
100 nF
14
10 k
W
Contrast
control
0 ... 12 V
Figure 3. Typical application circuit
18
17
16
15
Black level
(brightness)
control
C
G Clamp (–)
To cascade
driver (B)
390
W
10 k
W
10 k
W
10 nF
TELEFUNKEN Semiconductors
Rev . A2, 27-Jan-97
Page 5
AC Characteristics
20
18
16
14
12
10
Gain ( dB )
8
6
4
2
0
1101001000
95 10748
Figure 4. Gain vs. frequency (various peaking), V12 = 12 V (contrast), V15 = V19 = V24 = 4 V (brightness)
U2203B
C = 0 pF
C = 10 pF
C = 27 pF
C = 47 pF
Frequency ( MHz )
10
0
–10
–20
–30
Relative gain ( dB )
–40
–50
–60
1101001000
Frequency ( MHz )95 10747
Figure 5. Relative gain vs. frequency (no peaking), V12 = variable (contrast), V15 = V19 = V24 = 4 V (brightness),
0 dBrel = 17.7 dB, C = 0 pF
TELEFUNKEN Semiconductors
Rev . A2, 27-Jan-97
5 (7)
Page 6
U2203B
10
0
–10
–20
–30
Releative gain ( dB )
–40
–50
–60
1101001000
Frequency ( MHz )95 10746
Figure 6. Rel. gain vs. frequency (optimized peaking), V12 = variable (contrast), V15 = V19 = V24 = 4 V (brightness),
0 dBrel = 17.7 dB, C = 27 pF
Package Information
Package DIP28
Dimensions in mm
2815
37.40
36.90
1.54
33.02
0.58
0.48
2.54
4.0
3.8
3.3
0.8
0.5
0.35
0.25
technical drawings
according to DIN
specifications
15.29
15.19
13.9
13.7
16.1
15.3
13023
114
6 (7)
TELEFUNKEN Semiconductors
Rev . A2, 27-Jan-97
Page 7
U2203B
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol ( 1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or