Analog Devices SSM2017 Datasheet

Self-Contained

REFERENCE

1
2
3
4

8

7
6

5

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(Not to Scale)

–IN

+IN

V–

V+

OUT

RG

2

RG

1

SSM2017

a

FEATURES
Excellent Noise Performance: 950 pV/√

Noise Figure

Ultralow THD: < 0.01% @ G = 100 Over the Full Audio

Band
Wide Bandwidth: 1 MHz @ G = 100
High Slew Rate: 17 V/ms typ
Unity Gain Stable
True Differential Inputs
Subaudio 1/f Noise Corner
8-Pin Mini-DIP with Only One External Component

Required
Very Low Cost
Extended Temperature Range: –408C to +858C

APPLICATIONS
Audio Mix Consoles
Intercom/Paging Systems
Two-Way Radio
Sonar
Digital Audio Systems

Hz or 1.5 dB

Audio Preamplifier

SSM2017

FUNCTIONAL BLOCK DIAGRAM

V–

+IN

RG

RG

2

–IN

1

5kΩ

5kΩ

X1

PIN CONNECTIONS

Epoxy Mini-DIP (P Suffix)

X1

5kΩ

5kΩ

SSM2017

5kΩ

5kΩ

REFERENCE

V+

OUT

V–

GENERAL DESCRIPTION

The SSM2017 is a latest generation audio preamplifier, combin­ing SSM preamplifier design expertise with advanced process­ing. The result is excellent audio performance from a self­contained 8-pin mini-DIP device, requiring only one external
gain set resistor or potentiometer. The SSM2017 is further en­hanced by its unity gain stability.

Key specifications include ultralow noise (1.5 dB noise figure)
and THD (<0.01% at G = 100), complemented by wide band­width and high slew rate.

Applications for this low cost device include microphone pream­plifiers and bus summing amplifiers in professional and con­sumer audio equipment, sonar, and other applications requiring
a low noise instrumentation amplifier with high gain capability.

16-Pin Wide Body SOL (S Suffix)

16

NC

15

RG

14

NC

13

V+

NC

12

OUT

11

REFERENCE

10

NC

9

2

RG

NC

1

NC

–IN

+IN

NC

V–

NC

1

2

3

SSM2017

4

TOP VIEW

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(Not to Scale)

5

(Not to Scale)

6

7

8

NC = NO CONNECT

REV. C

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1997

(VS = 615 V and –408C ≤ TA ≤ +858C, unless otherwise noted. Typical speci-

SSM2017–SPECIFICA TIONS

Parameter Symbol Conditions Min Typ Max Units

DISTORTION PERFORMANCE T

Total Harmonic Distortion Plus Noise THD+N G = 1000, f = 1 kHz 0.012 %

NOISE PERFORMANCE

Input Referred Voltage Noise Density e

Input Current Noise Density i

DYNAMIC RESPONSE

Slew Rate SR G = 10 10 17 V/µs

Small Signal Bandwidth BW

INPUT

Input Offset Voltage V
Input Bias Current I
Input Offset Current Ios V
Common-Mode Rejection CMR V

Power Supply Rejection PSR V

Input Voltage Range IVR ±8V
Input Resistance R

OUTPUT

Output Voltage Swing V
Output Offset Voltage V
Minimum Resistive Load Drive T

Maximum Capacitive Load Drive 50 pF
Short Circuit Current Limit I
Output Short Circuit Duration 10 sec

GAIN

Gain Accuracy

Maximum Gain G 70 dB

REFERENCE INPUT

Input Resistance 10 kΩ
Voltage Range ±8V
Gain to Output 1 V/V

POWER SUPPLY

Supply Voltage Range V
Supply Current I

Specifications subject to change without notice.

n

n

–3 dB

IOS

B

IN

O
OOS

SC

10 kΩ T

R

=

G

G – 1 RG = 10 Ω, G = 1000 0.25 1 dB

S

SY

fications apply at TA = +258C.)

= +25°C

A

V

= 7 V rms

O

R

= 5 kΩ

L

G = 100, f = 1 kHz 0.005 %
G = 10, f = 1 kHz 0.004 %
G = 1, f = 1 kHz 0.008 %

f = 1 kHz, G = 1000 0.95 nV/√Hz
f = 1 kHz; G = 100 1.95 nV/√
f = 1 kHz; G = 10 11.83 nV/√
f = 1 kHz; G = 1 107.14 nV/√
f = 1 kHz, G = 1000 2 pA/√Hz

R

= 4.7 kΩ

L

C

= 50 pF

L

T

= +25°C

A

G = 1000 200 kHz
G = 100 1000 kHz
G = 10 2000 kHz
G = 1 4000 kHz

0.1 1.2 mV

VCM = 0 V 6 25 µA

= 0 V ±0.002 ±2.5 µA

CM

= ±8 V

CM

G = 1000 80 112 dB
G = 100 60 92 dB
G = 10 40 74 dB
G = 1, T
G = 1, T

= ±6 V to ±18 V

S

= +25°C2654dB

A

= – 40°C to +85°C2054 dB

A

G = 1000 80 124 dB
G = 100 60 118 dB
G = 10 40 101 dB
G = 1 26 82 dB

Differential, G = 1000 1 MΩ

G = 1 30 MΩ

Common Mode, G = 1000 5.3 MΩ

G = 1 7.1 MΩ

RL = 2 kΩ; TA = +25°C ±11.0 ±12.3 V

–40 500 mV

= +25°C2kΩ

A

T

= –40°C to +85°C 4.7 kΩ

A

Output-to-Ground Short ±50 mA

= +25°C

A

R

= 101 Ω, G = 100 0.20 1 dB

G

R

= 1.1 kΩ, G = 10 0.20 1 dB

G

R

= `, G = 1 0.05 0.5 dB

G

±6 ± 22 V

VCM = 0 V, RL = ` ±10.6 ±14.0 mA

Hz
Hz
Hz

–2–

REV. C

WARNING!

ESD SENSITIVE DEVICE

Typical Performance Characteristics

SSM2017

Figure 1. Typical THD+Noise* at G = 1, 10, 100, 1000;

= 7 V rms, VS = ±15 V, RL = 5 kΩ; TA = +25°C

V

O

*80 kHz low-pass filter used for Figures 1-2.

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±22 V

Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . Supply Voltage

Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . 10 sec

Storage Temperature Range (P, Z Packages) –65°C to +150°C
Junction Temperature (T

) . . . . . . . . . . . . . –65°C to +150°C

J

Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300°C

Operating Temperature Range . . . . . . . . . . . . –40°C to +85°C

Thermal Resistance*

8-Pin Hermetic DIP (Z): θ
8-Pin Plastic DIP (P): θ
16-Pin SOIC (S): θ

*θJA is specified for worst case mounting conditions, i.e., θJA is specified for device

in socket for cerdip and plastic DIP; θJA is specified for device soldered to printed
circuit board for SOL package.

JA

= 134; θJC = 12 . . . . . . °C/W

JA

= 96; θJC = 37 . . . . . . . . . . °C/W

JA

= 92; θJC = 27 . . . . . . . . . . . . . °C/W

Figure 2. Typical THD+ Noise * at G = 2, 10, 100, 1000;

= 10 V rms, VS = ±18 V, RL = 5 kΩ; TA = +25°C

V

O

ORDERING GUIDE

Model Range* Description Option

SSM2017P –40°C to +85°C 8-Pin Plastic DIP N-8
SSM2017S –40°C to +85°C 16-Lead SOL R-16

SSM2017S-REEL –40°C to +85°C 16-Lead SOL R-16

*XIND = –40°C to +85°C.

Temperature Package Package

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the SSM2017 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

REV. C

–3–