Analog Devices OP97 e Datasheet

Operational Amplifier
OP97
FEATURES Low Supply Current: 600 A Max OP07 Type Performance
Offset Voltage: 20 V Max Offset Voltage Drift: 0.6 ␮V/ⴗC Max
Very Low Bias Current
25C: 100 pA Max
–55C to +125C: 250 pA Max High Common-Mode Rejection: 114 dB Min Extended Industrial Temperature Range: –40C to +85ⴗC

GENERAL DESCRIPTION

The OP97 is a low power alternative to the industry-standard OP07 precision amplifier. The OP97 maintains the standards of performance set by the OP07 while utilizing only 600 µA supply current, less than 1/6 that of an OP07. Offset voltage is an ultralow 25 µV, and drift over temperature is below 0.6 µV/°C. External offset trimming is not required in the majority of circuits.
Improvements have been made over OP07 specifications in several areas. Notable is bias current, which remains below 250 pA over the full military temperature range. The OP97 is ideal for use in precision long-term integrators or sample-and-hold circuits that must operate at elevated temperatures.

PIN CONNECTIONS

8-Lead PDIP (P Suffix) 8-Lead SOIC (S Suffix)
NULL
–IN
+IN
1
OP97
2
3
V–
4
8
7
6
5
NULL
V+
OUT
OVER COMP
Common-mode rejection and power supply rejection are also improved with the OP97, at 114 dB minimum over wider ranges of common-mode or supply voltage. Outstanding PSR, a supply range specified from ±2.25 V to ±20 V and the OP97’s minimal power requirements combine to make the OP97 a preferred device for portable and battery-powered instruments.
The OP97 conforms to the OP07 pinout, with the null potenti­ometer connected between Pins 1 and 8 with the wiper to V+. The OP97 will upgrade circuit designs using 725, OP05, OP07, OP12, and 1012 type amplifiers. It may replace 741-type ampli­fiers in circuits without nulling or where the nulling circuitry has been removed.
REV. E
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective companies.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © 2003 Analog Devices, Inc. All rights reserved.
OP97–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
(@ VS = 15 V, VCM = 0 V, TA = 25C, unless otherwise noted.)
OP97E OP97F
Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
Input Offset Voltage V
OS
10 25 30 75 µV
Long-Term Offset
Voltage Stability ∆V
Input Offset Current I Input Bias Current I Input Noise Voltage e Input Noise Voltage Density e
Input Noise Current Density i Large-Signal Voltage Gain A Common-Mode Rejection CMR V Power-Supply Rejection PSR VS = ±2 V to ±20 V 114 132 110 132 dB Input Voltage Range
3
Output Voltage Swing V Slew Rate SR 0.1 0.2 0.1 0.2 V/µs Differential Input Resistance
4
Closed-Loop Bandwidth BW A Supply Current I Supply Voltage V
NOTES
1
10 Hz noise voltage density is sample tested. Devices 100% tested for noise are available on request.
2
Sample tested.
3
Guaranteed by CMR test.
4
Guaranteed by design.
Specifications subject to change without notice.
/Time 0.3 0.3 µV/Month
OS
OS
B
p-p 0.1 Hz to 10 Hz 0.5 0.5 µV p-p
n
n
n
VO
fO = 10 Hz f
= 1000 Hz
O
fO = 10 Hz 20 20 fA/Hz VO = ±10 V; RL = 2 k 300 2000 200 2000 V/mV
CM
1
2
= ±13.5 V 114 132 110 132 dB
30 100 30 150 pA ±30 ±100 ±30 ±150 pA
17 30 17 30 nV/Hz 14 22 14 22 nV/Hz
IVR ±13.5 ± 14.0 ± 13.5 ±14.0 V
O
R
IN
SY
S
RL = 10 kΩ±13 ±14 ±13 ±14 V
30 30 M
= 1 0.4 0.9 0.4 0.9 MHz
VCL
380 600 380 600 µA
Operating Range ±2 ± 15 ± 20 ± 2 ±15 ±20 V
ELECTRICAL CHARACTERISTICS
(@ VS = 15 V, VCM = 0 V, –40C TA +85C for the OP97E/F, unless otherwise noted.)
OP97E OP97F
Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
Input Offset Voltage V
OS
Average Temperature TCV Coefficient of V Input Offset Current I
OS
OS
Average Temperature TCI Coefficient of I Input Bias Current I
OS
B
OS
OS
S-Package 0.2 0.6 0.3 2.0 µV/°C
25 60 60 200 µV
0.3
60 250 80 750 pA
0.4 2.5 0.6 7.5 pA/°C
±60 ±250 ±80 ±750 pA
Average Temperature Coefficient of I
B
Large Signal Voltage Gain A
TCI
VO
B
Common-Mode Rejection CMR V Power Supply Rejection PSR V
VO = 10 V; RL = 2 k 200 1000 150 1000 V/mV
= ±13.5 V 108 128 108 128 dB
CM
= ±2.5 V to ±20 V 108 126 108 128 dB
S
0.4 2.5 0.6 7.5 pA/°C
Input Voltage Range* IVR ±13.5 ±14.0 ±13.5 ±14.0 V Output Voltage Swing V
O
RL = 10 kΩ±13 ±14 ±13 ±14 V
Slew Rate SR 0.05 0.15 0.05 0.15 V/µs Supply Current I Supply Voltage V
SY
S
Operating Range ±2.5 ± 15 ±20 ± 2.5 ±15 ±20 V
400 800 400 800 µA
*Guaranteed by CMR test.
Specifications subject to change without notice.
REV. E–2–
OP97

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 20 V
Input Voltage Differential Input Voltage Differential Input Current
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 V
3
. . . . . . . . . . . . . . . . . . . . . . . . ±1 V
3
. . . . . . . . . . . . . . . . . . . . ±10 mA
1
Output Short-Circuit Duration . . . . . . . . . . . . . . . . Indefinite
Operating Temperature Range
OP97E, OP97F (P, S) . . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Junction Temperature Range . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 60 sec) . . . . . . . . . . . . . 300°C
Package Type
4
JA
JC
Unit
8-Lead PDIP (P) 103 43 °C/W 8-Lead SOIC (S) 158 43 °C/W
NOTES
1
Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2
For supply voltages less than ± 20 V, the absolute maximum input voltage is equal
to the supply voltage.
3
The OP97’s inputs are protected by back-to-back diodes. Current-limiting resis-
tors are not used in order to achieve low noise. Differential input voltages greater than 1 V will cause excessive current to flow through the input protection diodes unless limiting resistance is used.
4
␪JA is specified for worst-case mounting conditions, i.e., ␪JA is specified for device
in socket for PDIP package; JA is specified for device soldered to printed circuit board for SOIC package.

ORDERING GUIDE

Temperature Package Package
Model Range Description Option*
OP97EP –40°C to +85°C 8-Lead PDIP N-8 OP97FP –40°C to +85°C 8-Lead PDIP N-8 OP97FS –40°C to +85°C 8-Lead SOIC R-8 OP97FS-REEL –40°C to +85°C 8-Lead SOIC R-8 OP97FS-REEL7 –40°C to +85°C 8-Lead SOIC R-8
*For outline information, see Package Information section.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP97 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
REV. E
–3–
OP97–Typical Performance Characteristics
400
1894 UNITS
300
200
NUMBER OF UNITS
100
0
–40
–20 0 20 40
INPUT OFFSET VOLTAGE (␮V)
TPC 1. Typical Distribution of Input Offset Voltage
60
TA = 25ⴗC V
= 0V
CM
40
20
0
–20
INPUT CURRENT (pA)
–40
–60
–75
–25 0 25 50–50 75
TEMPERATURE (
C)
TPC 4. Input Bias, Offset Current vs. Temperature
VS = 15V
= 25ⴗC
T
A
V
= 0V
CM
IB–
IB+
I
OS
100 125
400
1920 UNITS
300
200
NUMBER OF UNITS
100
0 –100
–50 0 50 100
INPUT BIAS CURRENT (pA)
VS = 15V T
= 25C
A
V
= 0V
CM
TPC 2. Typical Distribution of Input Bias Current
60
TA = 25ⴗC V
= 15V
S
40
20
0
–20
INPUT CURRENT (pA)
–40
–60
–15
COMMON-MODE VOLTAGE (V)
–5 0 5 10–10 15
IB–
IB+
I
OS
TPC 5. Input Bias, Offset Current vs. Common-Mode Voltage
500
1894 UNITS
400
300
200
NUMBER OF UNITS
100
0
–60
–20 0 20 40
–40 60
INPUT OFFSET CURRENT (pA)
TPC 3. Typical Distribution of Input Offset Current
5
TA = 25ⴗC V
= 15V
S
V
= 0V
CM
4
3
2
J PACKAGES
1
DEVIATION FROM FINAL VALUE (␮V)
0
0
Z, P PACKAGES
234 5
1
TIME AFTER POWER APPLIED (Minutes)
TPC 6. Input Offset Voltage Warm-Up Drift
VS = 15V T
= 25ⴗC
A
V
= 0V
CM
1000
BALANCED OR UNBALANCED V
= 15V
S
V
= 0V
CM
100
–55C TA +125C
TA = 25C
10
EFFECTIVE OFFSET VOLTAGE (␮V)
1
3k 10k 30k 100k 1M300k 3M 10M
1k
SOURCE RESISTANCE (⍀)
TPC 7. Effective Offset Volt­age vs. Source Resistance
100
BALANCED OR UNBALANCED V
= 15V
S
V
= 0V
CM
10
1
0.1
EFFECTIVE OFFSET VOLTAGE DRIFT (␮V/ C)
10k 100k 1M 10M
1k
SOURCE RESISTANCE (⍀)
TPC 8. Effective TCVOS vs. Source Resistance
100M
20
15
10
5
VS = 15V
0
OUTPUT SHORTED TO GROUND
–5
–10
SHORT-CIRCUIT CURRENT (mA)
–15
–20
0
TIME FROM OUTPUT SHORT (Minutes)
TA = –55ⴗC
TA = +25ⴗC
TA = +125ⴗC
TA = +125ⴗC
TA = +25ⴗC
TA = –55ⴗC
123
TPC 9. Short-Circuit Current vs. Time, Temperature
REV. E–4–
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