Analog Devices DAC10GX, DAC10GS, DAC10GP, DAC10FX Datasheet
REV. D
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
a
DAC10*
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 World Wide Web Site: http://www.analog.com
Fax: 781/326-8703 © Analog Devices, Inc., 1998
10-Bit High Speed Multiplying D/A Converter
(Universal Digital Logic Interface)
FEATURES
Fast Settling: 85 ns
Low Full-Scale Drift: 10 ppm/8C
Nonlinearity to 0.05% Max Over Temperature Range
Complementary Current Outputs: 0 mA to 4 mA␣
Wide Range Multiplying Capability: 1 MHz Bandwidth
Wide Power Supply Range: +5, –7.5 Min to 618 V Max
Direct Interface to TTL, CMOS, ECL, PMOS, NMOS
Availability in Die Form␣
GENERAL DESCRIPTION
The DAC10 series of 10-bit monolithic multiplying digital-toanalog converters provide high speed performance and full-scale
accuracy.
Advanced circuit design achieves 85 ns settling times with very
low “glitch” energy and low power consumption. Direct interface to all popular logic families with full noise immunity is
provided by the high swing, adjustable threshold logic inputs.
SIMPLIFIED SCHEMATIC
2
4
I
OUT
I
OUT
V+
V
LC
MSB
B
1
B
2
B
3
B
4
B
5
B
6
B
7
B
8
B
9
B
10
LSB
15 1 5 6 7 8 9 10 11 12 13 14
BIAS NETWORK
CURRENT SWITCHES
REFERENCE
AMPLIFIER
16
17
V
REF
(+)
V
REF
(–)
COMP V–
18 3
All DAC10 series models guarantee full 10-bit monotonicity,
and nonlinearities as tight as +0.05% over the entire operating
temperature range are available. Device performance is essentially unchanged over the ± 18 V power supply range, with
85 mW power consumption attainable at lower supplies.
A highly stable, unique trim method is used, which selectively
shorts Zener diodes, to provide 1/2 LSB full-scale accuracy
without the need for laser trimming.
Single-chip reliability, coupled with low cost and outstanding
flexibility, make the DAC10 device an ideal building block for
A/D converters, Data Acquisition systems, CRT displays, programmable test equipment and other applications where low
power consumption, input/output versatility and long-term
stability are required.
*Protected by Patent Nos. 4,055,770, 4,056,740 and 4,092,639.
REV. D
DAC10–SPECIFICATIONS
–2–
ELECTRICAL CHARACTERISTICS
DAC10F DAC10G
Parameter Symbol Conditions Min Typ Max Min Typ Max Units
MONOTONICITY 10 10 Bits
NONLINEARITY NL 0.3 0.5 0.6 1 LSB
DIFFERENTIAL
NONLINEARITY DNL 0.3 1 0.7 LSB
SETTLING TIME t
S
All Bits Switched ON or OFF
Settle to 0.05% of FS (See Note) 85 135 85 150 ns
OUTPUT CAPACITANCE C
O
18 18 pF
PROPAGATION DELAY t
PLH
All Bits Switched RL = 5 kΩ 50 50 ns
t
PHL
RL = 0 kΩ 50 50 ns
OUTPUT VOLTAGE Full-Scale Current Change –5.5 –5.5 V
COMPLIANCE V
OC
<1 LSB +10 +10 V
GAIN TEMPCO TCI
FS
(See Note) ±10 ±25 ±10 ±50 ppm/°C
FULL-SCALE SYMMETRY I
FSS
IFR–I
FR
0.1 4 0.1 4 µA
ZERO-SCALE CURRENT I
ZS
0.01 0.5 0.01 0.5 µA
FULL-SCALE CURRENT I
FR
(See Note) 3.960 3.996 4.032 3.920 3.996 4.072 mA
REFERENCE INPUT
SLEW RATE DI/dt 6 6 mA/µs
REFERENCE BIAS
CURRENT I
B
–1 –3 –1 –3 µA
POWER SUPPLY PPS/
FS
+ 4.5 V ≤ V+ ≤ –18 V 0.001 0.01 0.001 0.01 %∆IFS/%∆V
SENSITIVITY PPS/FS– –18 V ≤ V– ≤ –10 V 0.0012 0.01 0.0012 0.01 %∆IFS/%∆V
POWER SUPPLY CURRENT I+ V
S
= ±15 V; I
REF
= 2 mA 2.3 4 2.3 4 mA
I– –9 –15 –9 –15 mA
I+ V
S
= +5 V; –7.5 V; I
REF
= 1 mA 1.8 4 1.8 4 mA
I– –5.9 –9 –5.9 –9 mA
POWER DISSIPATION P
D
VS = ±15 V; I
REF
= 2 mA 231 285 231 285 mW
P
D
VS = +5 V; –7.5 V; I
REF
= 1 mA 85 88 85 88 mW
LOGIC INPUT LEVELS V
IL
VLC = 0 0.8 0.8 V
V
IH
VLC = 0 2 2 V
LOGIC INPUT CURRENTS I
IL
VLC = 0; VIN = 0.8 V –10 –5 –10 –5 µA
I
IH
VIN = 2.0 V 0.001 10 0.001 10 µA
ELECTRICAL CHARACTERISTICS
DAC10F DAC10G
Parameter Symbol Conditions Min Typ Max Min Typ Max Units
MONOTONICITY 10 10 Bits
NONLINEARITY NL 0.3 0.5 0.6 1 LSB
DIFFERENTIAL
NONLINEARITY DNL 0.3 1 0.7 LSB
OUTPUT VOLTAGE
COMPLIANCE V
OC
Full-Scale Current Change, <1 LSB –5 –6/+18 +10 –5 –6/+15 +10 V
FULL-SCALE CURRENT I
FS
V
REF
= 10.000 V,
R14 = R15 = 5.000 kΩ 3.978 3.996 4.014 3.956 3.996 4.036 mA
FULL-SCALE SYMMETRY I
FSS
IFR–I
FR
0.1 4 0.1 0.4 µA
ZERO-SCALE CURRENT I
ZS
0.01 0.5 0.01 0.5 µA
NOTE: Guaranteed by design.
(@ VS = 615 V; I
REF
= 2 mA; 08C ≤ TA ≤ +708C for DAC10F and G, unless otherwise noted.
Output characteristics apply to both I
OUT
and I
OUT
.)
(@ VS = 615 V; I
REF
= 2 mA; TA = +258C, unless otherwise noted. Output characteristics
apply to both I
OUT
and I
OUT
.)
–3–REV. D
DAC10
WAFER TEST LIMITS
DAC10N
Parameter Symbol Conditions Limit Units
RESOLUTION 10 Bits min
MONOTONICITY 10 Bits min
NONLINEARITY NL ±0.5 LSB max
OUTPUT VOLTAGE COMPLIANCE V
OC
True 1 LSB +10 V max
–5 V min
OUTPUT CURRENT RANGE I
FS
±3.996 mA ±18 µA max
ZERO-SCALE CURRENT I
ZS
All Bits OFF 0.5 µA max
LOGIC INPUT “1” V
IH
IIN = 100 nA 2 V min
LOGIC INPUT “0” V
IL
VLC @ Ground 0.8 V max
IIN = –100 µA
POSITIVE SUPPLY CURRENT I+ V+ = 15 V 4 mA max
NEGATIVE SUPPLY CURRENT I– V+ = –15 V –15 mA max
NOTE: Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not
guaranteed for standard produce dice.
TYPICAL ELECTRICAL CHARACTERISTICS
DAC10F
Parameter Symbol Conditions Typ Units
SETTLING TIME t
S
To ±1/2 LSB When Output Is Switched from 0 to FS 85 ns
GAIN TEMPERATURE
COEFFICIENT (TC) V
REF
Tempco Excluded ±10 ppm FS/°C
OUTPUT CAPACITANCE 18 pF
OUTPUT RESISTANCE 10 MΩ
(@ VS = 615 V, I
REF
= 2 mA, TA = +258C, unless otherwise noted. Output characteristics refer to both
I
OUT
and I
OUT
).
(@ VS = 615 V, I
REF
= 2 mA, unless otherwise noted. Output characteristics
refer to both I
OUT
and I
OUT
).
DICE CHARACTERISTICS
DIE SIZE 0.091 3 0.087 inch, 7,917 sq. mils
(2.311 3 2.210 mm, 5.107 sq. mm)
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