Zetex Semiconductor 2N6725, 2N6724 Datasheet
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1 MARCH 94
2N6724
2N6725
FEATURES
* 50 Volt V
CEO
* Gain of 15k at IC = 0.5 Amp
=1 Watt
*P
tot
C
B
E
E-Line
ABSOLUTE MAXIMUM RATINGS.
TO92 Compatible
PARAMETER SYMBOL 2N6724 2N6 725 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
= 25°C P
amb
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
tot
j:Tstg
50 60 V
40 50 V
10 V
2A
1A
1W
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL 2N6724 2N6725 UNI T CONDITI ONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
Ratio
Collector Base
Capacitance
C
CB
*Measured under pulsed conditions. Pulse width=300
50 60 V
=1µA, I
I
C
=0
E
40 50 V IC=1mA, IB=0*
10 10 V
1.0
1.0
0.1 0.1
1.0
1.5
1.0
1.5VV
µA
µA
µ
A
=10µA, I
I
E
V
CB
V
CB
V
EB
C
=30V, IE=0
=40V, IE=0
=8V, IC=0
IC=200mA, IB=2mA*
=1A, IB=2mA*
I
C
2.0 2.0 V IC=1A, IB=2mA*
2.0 2.0 V IC=1A, VCE=5V*
25K
15K
4K 40K
25K
15K
4K 40K
I
=200mA, VCE=5V*
C
I
=500mA, VCE=5V*
C
=1A, VCE=5V*
I
C
10 10 pF VCB=10V, f=1MHz
µs. Duty cycle ≤2%
3-7
=0
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