Page 1
High Voltage Transistor
• Collector-Emitter Voltage: V
• Collector Dissipation: P
= -300V
CEO
(max)=625mW
C
2N6519
2N6519
TO-92
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Ta=25°C unless otherwise noted
1
1. Emitter 2. Base 3. Collector
Symbol Parameter Value Units
V
V
V
I
I
P
CBO
CEO
EBO
C
B
C
Collector-Base Voltage -300 V
Collector-Emitter Voltage -300 V
Emitter-Base Voltage -5 V
Collector Current -500 mA
Base Current -250 mA
Collector Power Dissipation 625 W
Derate above 25°C5mW/°C
T
J
T
STG
• Refer to 2N6520 for graphs
Electrical Characteristics
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector -Emitter Saturation Voltage IC= -10mA, IB= -1mA
V
CE
(sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -1mA
V
BE
(on) Base-Emitter On Voltage VCE= -10V, IC= -100mA -2 V
V
BE
f
T
C
ob
C
EB
t
ON
t
OFF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -300 V
* Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -300 V
Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
Collector Cut-off Current VCB= -200V, IE=0 -50 nA
Emitter Cut-off Current VEB= -4V, IC=0 -50 nA
* DC Current Gain VCE= -10V, IC= -1mA
V
= -10V, IC= -10mA
CE
= -10V, IC= -30mA
V
CE
= -10V, IC= -50mA
V
CE
= -10V, IC= -100mA
V
CE
30
45
45
40
20
270
200
-0.30
= -20mA, IB= -2mA
I
C
= -30mA, IB= -3mA
I
C
= -50mA, IB= -5mA
I
C
-0.35
-0.50
-1
-0.75
= -20mA, IB= -2mA
I
C
I
= -30mA, IB= -3mA
C
-0.85
-0.90
* Current Gain Bandwidth Product VCE= -20V, IC= -10mA, f=20MHz 40 200 MHz
Output Capaci tance VCB= -20V, IE=0, f=1MHz 6 pF
Emitter-Base Capacitance VEB= -0.5V, IC=0, f=1MHz 100 pF
Turn On Time VBE (off)= -2V, VCC= -100V
= -50mA, IB1= -10mA
I
C
Turn Off Time VCC= -100V, IC= -50mA
=10mA
I
B1=IB2
200 ns
3.5 ns
V
V
V
V
V
V
V
©2003 Fairchild Semiconductor Corporation Rev. B2, Jnauary 2003
Page 2
Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
2N6519
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
Rev. B2, Jnauary 2003©2003 Fairchild Semiconductor Corporation
Page 3
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As used herein:
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2003 Fairchild Semiconductor Corporation Rev. I2
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
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