Datasheet 2N6897 Datasheet (Fairchild)

2N6897

-12A, -100V, P-Channel Enhancement Mode

December 2001

Power MOS Field Effect Transistor

Features

• -12A, -100V

•r

DS(ON)

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

= 0.3 Ω

Ordering Information

PART NUMBER PACKAGE BRAND

2N6897 TO-204AA 2N6897

NOTE: When ordering, include the entire part number.

Packaging

Description

The 2N6897 is an P-Channel enhancement mode silicon
gate power MOS field effect transistor designed for applica­tions such as switching regulators, switching converters,
motor drivers, relay drivers, and drivers for high power bipo­lar switching transistors requiring high speed and low gate
drive power. This device can be operated directly from an
integrated circuit.

Symbol

D

G

S

JEDEC TO-204AA

©2001 Fairchild Semiconductor Corporation 2N6897 Rev. B

µ

µ

Ω

Ω

2N6897

Absolute Maximum Ratings

o

T

= 25

C, Unless Otherwise Specified

C

2N6897 UNITS

Drian to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

Drian to Gate Voltage (R
Continuous Drain Current

= 1 ΜΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

GS

RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

T

= 25

C

Above T

o

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

o

= 25

C, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8 W/

C

Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

(At distance 1/8 in. (3.17mm) from seating plane for 10s max)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications

o

T

= 25

C, Unless Otherwise Specified

C

DSS

DGR

D

DM

GS

D

, T

J

STG

L

-100 V

-100 V

-12 A

-30 A

±20 V

100 W

-55 to 150
260

o

C

o

C

o

C

TEST

PARAMETER SYMBOL

Drian to Source

BV

Breakdown Voltage

Gate to Threshold Voltage V

GS(TH)

Zero-Gate Voltage Drain Current I

Zero-Gate Voltage Drain Current
T

= 125

C

o

C

Gate to Source Leakage Current I

Drian to Source On-Voltage (Note 1) V

Static Drian to Source On Resistance (Note 1) r

Static Drian to Source On Resistance
T

= 125

C

o

C (Note 1)

DS(ON)

DS(ON)

Forward Transconductance (Note 1) g

Input Capacitance C

Output Capacitance C

Reverse-Transfer Capacitance C

Turn-On Delay Time t

d(ON)

Rise Time t

Turn-Off Delay Time t

d(OFF)

Fall Time t

Thermal Resistance

R

Junction-to-Case

DSS

DSS

GSS

fs

ISS

OSS

RSS

r

f

JC

θ

CONDITIONS MIN TYP MAX UNITS

I

= 1mA, V

D

V

= V

GS

V

= -80V - - 1

DS

V

= -80V - - 50

DS

V

= ±20V, V

GS

I

= 7.6A, V

D

I

=12A, V

D

I

= 7.6A, V

D

I

= 7.6A, V

D

I

= 7.6A, V

D

V

= 0V, V

GS

f = 0.1MHz

= 0V -100 - - V

GS

, I

= 0.25mA -2 - -4 V

DS

D

= 0V - - 100 nA

DS

= -10V - - 2.28 V

GS

= -10V - - -4.8 V

GS

= -10V - - 0.3

GS

= 10V - - 0.465

GS

= -10V 2 - 8 S

DS

DS

= -25V

400 - 1500 pF

200 - 700 pF

60 - 240 pF

I

= 7.6A, V

D

R

GEN

V

GS

= -10V

= R

DS

GS

= -50V

= 15 Ω ,

- - 60 ns

- - 175 ns

- - 275 ns

- - 175 ns

- - 1.25

o

A

A

C/W

Source to Drain Diode Specifications

TEST

PARAMETER SYMBOL

Diode Forward Voltage (Note 1) V

Diode Reverse Recovery Time t

SD

rr

NOTE:

4. Pulsed: pulse duration = 300 µ s, max, duty cycle = 2%.

©2001 Fairchild Semiconductor Corporation 2N6897 Rev. B

CONDITIONS MIN TYP MAX UNITS

I

= 12A 0.8 - 1.6 V

SD

I

= 4A, d

F

/dt = 100A/ µ s - - 500 ns

IF

100

10

1

0.01
1 10 100 1000

I

D

, DRAIN CURRENT (A)

OPERATION IN THIS AREA
LIMITED BY r

DS(ON)

VDS, DRAIN TO SOURCE (V)

100µs

1.0ms

10ms

100ms

DC

V

DSS

(MAX) = 100V

TC = 25oC
TJ = MAX RATED

r

DS(ON)

, DRAIN TO SOURCE ON

ID, DRAIN CURRENT (A)

0.4

0.2

0.1

0

02 6 101418

RESISTANCE (Ω)

-40oC

25oC

125oC

0.3

20

4 8 12 16

VGS = 10V
PULSE TEST

PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

1

0.9

-50 0 50 100 150

T

J,

JUNCTION TEMPERATURE (oC)

V

GS(TH)

, NORMALIZED GATE

THRESHOLD VOLTAGE (V)

1.2

1.1

0.8

0.7

VDS = V

GS

ID = 0.25mA

1.3

2N6897

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0.0
0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 15. NORMALIZED POWER DISSIPATION vs

TEMPERATURE DERATING CURVE

24

V

= 10V

DS

PULSE TEST

20

PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

16

12

-40oC

125

FIGURE 16. MAXIMUM OPERATING AREAS CURVE

25oC

125oC

8

4

, ON-STATE DRAIN CURRENT (A)

125oC

d(ON)

I

0

-1 -2 -3 -4 -5 -8

V

GATE TO SOURCE VOLTAGE (V)

GS,

-40oC

FIGURE 17. TRANSFER CHARACTERISTICS FIGURE 18. DRAIN TO SOURCE ON RESISTANCE AS A FUNC-

2.0

1.5

1.0

0.5

©2001 Fairchild Semiconductor Corporation 2N6897 Rev. B

ON RESISTANCE (mΩ)

NORMALIZED DRAIN TO SOURCE

FIGURE 19. NORMALIZED r

= 7.6A

I

D

VGS = 10V

0

-50 0 50 100 150

T

, JUNCTION TEMPERATURE (oC)

J

TEMPERATURE

DS(ON)

vs JUNCTION

-6 -7

TION OF DRAIN CURRENT

FIGURE 20. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

t

ON

t

d(ON)

t

r

90%

10%

V

DS

90%

10%

t

f

t

d(OFF)

t

OFF

90%

50%

50%

10%

PULSE WIDTH

V

GS

2N6897

Typical Performance Curves Unless Otherwise Specified (Continued)

2400

2000

1600

1200

800

F, CAPACITANCE (C)

P

400

01020304050

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 21. CAPACITANCE vs VOLTAGE

Test Circuit and Waveforms

V

DD

f = 1MHz

C

ISS

C

OSS

C

RSS

7

6

5

4

3

2

1

, FORWARD TRANSCONDUCTANCE (S)

fs

g

0

012 345

ID, DRAIN CURRENT (A)

-40oC

25oC

125oC

678 910

FIGURE 22. FORWARD TRANSCONDUCTANCE AS A

FUNCTION OF DRAIN CURRENT

R

L

V

DS

V

GS

0V

R

GS

DUT

FIGURE 23. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 24. RESISTIVE SWITCHING WAVEFORMS

©2001 Fairchild Semiconductor Corporation 2N6897 Rev. B

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna

TM

TM

FACT™
FACT Quiet Series™

STAR*POWER is used under license

FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™



OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench



QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER

SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™



UltraFET

VCX™



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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4