Datasheet 2N6517 Datasheet (Fairchild)

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2N6517 NPN Epitaxial Silicon Transistor

Features

• High Voltage Transistor

• Collector Dissipation: P

• Complement to 2N6520

• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

(max) = 625mW

August 2010

1. Emitter 2. Base 3. Collector

TO-92

2N6517 — NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Symbol Parameter Value Units

CBO

CEO

EBO

STG

Electrical Characteristics T

Collector-Base Voltage 2N6517 2N6517C

Collector-Emitter Voltage 2N6517 2N6517C

350 400

Emitter-Base Voltage 6 V

Collector Current 500 mA

Collector Power Dissipation 625 mW

Junction Temperature 150 °C

Storage Temperature -55 ~ 150 °C

= 25°C unless otherwise noted

V V

Symbol Parameter Conditions Min. Max. Units

CBO

EBO

CBO

CEO

EBO

Collector-Base Breakdown Voltage 2N6517 2N6517C

= 100µA, IE = 0

350 400

Collector-Emitter Breakdown Voltage * 2N6517 2N6517C

= 1mA, IB = 0

350 400

Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6 V

Collector Cut-off Current VCB = 250V, IE = 0 50 nA

Emitter Cut-off Current VEB = 5V, IC = 0 50 nA

DC Current Gain * 2N6517/2N6517C 2N6517/2N6517C 2N6517/2N6517C 2N6517/2N6517C 2N6517/2N6517C 2N6517C

= 10V, IC = 1mA

= 10V, IC = 10mA

= 10V, IC = 30mA

= 10V, IC = 50mA

= 10V, IC = 100mA

= 10V, IC = 5mA

20 30 30 20 15 50

200 200

200

V V

2N6517 Rev. B1 1

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2N6517 — NPN Epitaxial Silicon Transistor

Electrical Characteristics (Continued) T

= 25°C unless otherwise noted

Symbol Parameter Conditions Min. Max. Units

CE(sat)

BE(sat)

BE(on)

Collector-Emitter Saturation Voltage IC = 10mA, IB = 1mA

Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA

Output Capatitance VCB = 20V, IE = 0, f = 1MHz 6 pF

Current Gain Bandwidth Product * IC = 10mA, VCE = 20V, f = 20MHz 40 200 MHz

Base-Emitter On Voltage IC = 100mA, VCE = 10V 2 V

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%

= 20mA, IB = 2mA

= 30mA, IB = 3mA

= 50mA, IB = 5mA

= 20mA, IB = 2mA

= 30mA, IB = 3mA

0.3

0.35

0.5 1

0.75

0.85

0.9

V V V V

V V V

2N6517 Rev. B1 2

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Typical Performance Characteristics

2N6517 — NPN Epitaxial Silicon Transistor

1000

100

, DC CURRENT GAIN

0.1 1 10 100 1000

Ta = 25oC

Ta = 125oC

IC [mA], COLLECTOR CURRENT

Figure 1. DC Current Gain Figure 2. Saturation Voltage

IC = 10 I

Ta = 25oC

Ta = 125oC

Ta = 75oC

VCE = 10V

Ta = 75oC

100

IC = 10 I

0.1

(sat) [V], SATURATION VOLTAGE

0.01 1 10 100 1000

Ta = 25oC

Ta = 125oC

Ta = 75oC

IC [mA], COLLECTOR CURRENT

100

Ta = 125oC

0.1

Ta = 75oC

0.01

(sat) [V], SATURATION VOLTAGE

0.1 1 10 100 1000

IC [mA], COLLECTOR CURRENT

[nA], Emitter Cut Off Current

Ta = 25oC

EBO

1E-3

123456

VEB [V], EMITTER-BASE VOLTAGE

Figure 3. Saturation Voltage Figure 4. Emitter Cut Off Current

10000

1000

Ta = 125oC

100

Ta = 75oC

Ta = 25oC

[nA], Collector CutOff Current

CBO

0.1 50 100 150 200 250 300 350

VCB [V], COLLECTOR-BASE VOLTAGE

1.6

VCE = 10V

1.4

1.2

1.0

0.8

0.6

(on) [V], BASE-EMITTER ON VOLTAGE

0.4

Ta = 25

1 10 100 1000

IC [mA], COLLECTOR CURRENT

Figure 5. Collector CutOff Current Figure 6. Base-Emitter On Voltage

2N6517 Rev. B1 3

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Typical Performance Characteristics (Continued)

2N6517 — NPN Epitaxial Silicon Transistor

2.0

f = 1MHz

1.8

1.6

1.4

1.2

[pF], Collector-Base Capacitance

1.0 0 20406080100

VCB [V], COLLECTOR-BASE VOLTAGE

[pF], Emitter-Base Capacitance

1.01.52.02.53.03.54.04.55.0

VEB [V], EMITTER-BASE VOLTAGE

Figure 7. Output Capacitance Figure 8. Input Capacitance

100

1000

100

f = 1MHz

[ns], SWITCHING TIME

& t

VCC=100V

, t

fT [MHz], Current Gain Bandwidth

1 10 100

IC [mA], COLLECTOR CURRENT

=5IB1=-5IB2, Ta=25oC

10 100

IC [mA], COLLECTOR CURRENT

Figure 9. Current Gain Bandwidth Product Figure 10. Resistive Load Switching

10000

OFF

stg

1000

100

[ns], SWITCHING TIME

OFF

& t

VCC=100V

, t

stg

=5IB1=-5IB2, Ta=25oC

10 100

IC [mA], COLLECTOR CURRENT

Figure 11. Resistive Load Switching

2N6517 Rev. B1 4

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Physical Dimensions

3.86MAX

0 5

4.58

+0.25 –0.15

2N6517 — NPN Epitaxial Silicon Transistor

TO-92

±0.20

4.58

0.46

1.27TYP

[1.27

±0.10

.02

±0.10

±0.20

+0.10

]

–0.05

0.38

3.60

±0.20

1.27TYP

[1.27

(R2.29)

±0.20

±0.40

14.47

]

(0.25)

0.38

+0.1 –0.0

2N6517 Rev. B1 5

Dimensions in Millimeters

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Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I49