WTE 1N5408-TB, 1N5408-T3, 1N5408, 1N5407-TB, 1N5407-T3 Datasheet

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WTE
POWER SEM ICOND UCTOR S
1N5400 – 1N5408
3.0A SILICON RECTIFIER
Features
!
Diffused Junction
!
Low Forward Voltage Drop
!
High Current Capability A B A
!
!
High Surge Current Capability
Mechanical Data
!
Case: Molded Plastic D
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!
Polarity: Cathode Band
!
Weight: 1.2 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
!
Epoxy: UL 94V-O rate flame retardant
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
RMS Reverse Voltage V Average Rectified Output Current
(Note 1) @T Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load (JEDEC Method)
Forward Voltage @IF = 3.0A V
= 75°C
A
V
RRM
V
RWM
R
V
R(RMS)
O
I
FSM
I
FM
1N
54001N54011N54021N54041N54061N54071N5408
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
Dim Min Max
@TA=25°C unless otherwise specified
200 A
DO-201AD
A B C D
All Dimensions in mm
3.0 A
1.0 V
25.4
8.50 9.50
1.20 1.30
5.0 5.60
Unit
C
Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @T
Typical Junction Capacitance (Note 2) C Typical Thermal Resistance Junction to Ambient
(Note 1) Operating Temperature Range T Storage Temperature Range T
= 100°C
A
I
R
RM
STG
j
JA
j
5.0
100
50 pF
18 K/W
-65 to +125 °C
-65 to +150 °C
µA
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
1N5400 – 1N5408 1 of 3 © 2002 Won-Top Electronics
G
O
RWARD CURRENT (A)
0
2
S
O
S
O
S
G
C
(
)
0
C
C
EF
4.0
3.0
2.0
200
100
T=25ºC
j
10
FORWARD CURRENT (A) U
1.0
(AV)
I , AVERA
0
200
A
100
URRENT E
UR
RWARD
25 50 75 100 125 150 175 20
T , AMBIENT TEMPERATURE(°C)
A
Fig. 1 Forward Current Derating Curve
1.0
TANTANE
F
I,IN
0.2
0.4 0.8 1.2 1.6 2.0 2.4 2.8
V , INSTANTANEOUSFORWARD VOLTAGE(V)
F
Fig. 2 Typical Forward Characteristics
100
10
APACITANCE(pF) ,
j
3.
Tj = 25°C
Pulse width = 300µs
FSM
I , PEAK F
10
1.0
10
100
NUMBEROF CYCLES AT 60Hz
Fig. 3 Maximum Non-Repetitive Surge Current
1N5400 – 1N5408 2 of 3 © 2002 Won-Top Electronics
1.0
1.0 10 10 V , REVERSEVOLTAGE (V)
R
Fi g. 4 Typical Ju nct io n Capacitance
f = 1MHz T = 25ºC
j
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