WTE 1N5399-TB, 1N5399-T3, 1N5399, 1N5398-TB, 1N5398-T3 Datasheet
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WTE
POWER SEMICONDUCTORS
1N5391 – 1N5399
1.5A SILICON RECTIFIER
Features
!
Diffused Junction
!
Low Forward Voltage Drop
!
High Current Capability A B A
!
High Reliability
!
High Surge Current Capability
Mechanical Data
!
Case: Molded Plastic D
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!
Polarity: Cathode Band
!
Weight: 0.40 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage V
RRM
V
RWM
V
R
V
R(RMS)
1N
53911N53921N53931N53951N53971N53981N5399
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
Dim Min Max
A
B
C
D
@TA=25°C unless otherwise specified
DO-15
25.4 —
5.50 7.62
0.71 0.864
2.60 3.60
All Dimensions in mm
Unit
C
Average Rectified Output Current
(Note 1) @T
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage @IF = 1.5A V
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @T
Typical Junction Capacitance (Note 2) C
Typical Thermal Resistance Junction to Ambient
(Note 1)
Operating Temperature Range T
Storage Temperature Range T
= 75°C
A
= 100°C
A
R
I
I
FSM
RM
I
STG
O
FM
1.5 A
50 A
1.0 V
5.0
50
j
JA
j
30 pF
50 K/W
-65 to +125 °C
-65 to +150 °C
µA
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
1N5391 – 1N5399 1 of 3 © 2002 Won-Top Electronics
1.5
10
1.0
0.5
0
(AV)
I , AVERAGE FORWARD RECTIFIED CURRENT (A)
25 50 75 100 125 150 175
T AMBIENT TEMPERATURE (ºC)
A
Fig. 1, Forward Current Derating Curve
50
8.3 ms SINGLE HALF SINE-WAVE
(JEDEC METHOD)
40
1.0
0.1
Pulse Width = 300µs
Duty Cycle l 2%
F
I , INSTANTANEOUS FORWARD CURRENT (A)
0.01
0.6 0.8 1.0 1.2 1.4 1.6
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Forward Characteristics
100
T = 25°C
j
T = 25°C
j
f = 1MHz
30
20
10
FSM
I , PEAK FORWARD SURGE CURRENT (A)
0
1.0
10
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Maximum Non-Repetitive Peak Forward Surge Current
j
C , CAPACITANCE (pF)
1.0
10
1.0 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 4 Typical Junction Capacitance
1N5391 – 1N5399 2 of 3 © 2002 Won-Top Electronics
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