Vishay VS-VSKT105.. Series, VS-VSKH105.. Series, VS-VSKL105.. Series, VS-VSKN105.. Series Data Sheet

VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series

ADD-A-PAK

ADD-A-PAK Generation VII Power Modules

Thyristor/Diode and Thyristor/Thyristor, 105 A

PRODUCT SUMMARY

I

or I

T(AV)

F(AV)

Type Modules - Thyristor, Standard

MECHANICAL DESCRIPTION

The ADD-A-PAK Generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.

105 A

Vishay Semiconductors

FEATURES

• High voltage

• Industrial standard package

• Low thermal resistance

• UL approved file E78996

• Designed and qualified for industrial level

BENEFITS

• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate

• Up to 1600 V

• High surge capability

• Easy mounting on heatsink

ELECTRICAL DESCRIPTION

These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

or I

T(AV)

F(AV)

I

O(RMS)

I

TSM,

I

FSM

2

I

t

2

I

t 200 kA2s

V

RRM

T

Stg

T

J

Revision: 21-Mar-14

85 °C 105

As AC switch 235

50 Hz 2000

60 Hz 2094

50 Hz 20

60 Hz 18.26

Range 400 to 1600 V

-40 to 130

-40 to 130

1

Document Number: 94628

A

kA2s

°C

VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series

Vishay Semiconductors

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM

RRM

REPETITIVE PEAK

REVERSE VOLTAGE

TYPE NUMBER

VOLTAGE

CODE

V

04 400 500 400

06 600 700 600

08 800 900 800

VS-VSK.105

10 1000 1100 1000

12 1200 1300 1200

14 1400 1500 1400

16 1600 1700 1600

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current (thyristors) I

Maximum average forward current (diodes) I

T(AV)

F(AV)

V

, MAXIMUM

RSM

NON-REPETITIVE PEAK

V

REVERSE VOLTAGE

V

180° conduction, half sine wave,

= 85 °C

T

C

, MAXIMUM REPETITIVE

DRM

PEAK OFF-STATE VOLTAGE,

GATE OPEN CIRCUIT

V

105

I

RRM, IDRM

AT 130 °C

mA

20

Maximum continuous RMS on-state current,
as AC switch

Maximum peak, one-cycle non-repetitive
on-state or forward current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t

Maximum value or threshold voltage V

Maximum value of on-state 
slope resistance

Maximum peak on-state or forward voltage

Maximum non-repetitive rate of rise of
turned on current

Maximum holding current I

Maximum latching current I

Notes

(1)I2

t for time tx = I2t x t

(2)

Average power = V

(3)

16.7 % x  x IAV < I <  x I

(4)

I >  x I

AV

T(TO)

x

x I

T(AV)

AV

+ rt x (I

T(RMS)

2

)

I

O(RMS)

I

TSM

or

I

FSM

T(TO)

r

t

V

TM

V

FM

dI/dt

H

L

or

I

(RMS)

t = 10 ms

t = 8.3 ms 2094

t = 10 ms

t = 8.3 ms 1760

t = 10 ms

t = 8.3 ms 18.26

t = 10 ms

t = 8.3 ms 12.91
t = 0.1 ms to 10 ms, no voltage reapplied 

(1)

T

= TJ maximum

J

Low level

(2)

High level

Low level

(2)

High level

ITM =  x I

IFM =  x I

T

= 25 °C, from 0.67 V

J

I

=  x I

TM

No voltage
reapplied

Sinusoidal
half wave,

100 % V

RRM



initial T

reapplied

No voltage
reapplied

Initial TJ = TJ maximum

100 % V

RRM



reapplied

(3)

TJ = TJ maximum

(4)

(3)

TJ = TJ maximum

(4)

T(AV)

TJ = 25 °C 1.8 V

F(AV)

,

, Ig = 500 mA, tr < 0.5 μs, tp > 6 μs

T(AV)

DRM

I

(RMS)

= TJ maximum

J

TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit

TJ = 25 °C, anode supply = 6 V, resistive load 400

235

2000

1682

20

14.14

kA2s

200 kA

0.98

1.12

2.7

2.34

m

150 A/μs

250

mA

A

2

s

V

Revision: 21-Mar-14

2

Document Number: 94628

VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series

Vishay Semiconductors

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak gate current I

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

TJ = -40 °C

Maximum gate voltage required to trigger V

GT

T

= 25 °C 2.5

J

T

= 125 °C 1.7

J

Anode supply = 6 V
resistive load

TJ = -40 °C

Maximum gate current required to trigger I

Maximum gate voltage that will not trigger V

Maximum gate current that will not trigger I

GD

GT

T

TJ = 125 °C, rated V

GD

TJ = 125 °C, rated V

= 25 °C 150

J

= 125 °C 80

J

Anode supply = 6 V
resistive load

applied 0.25 V

DRM

applied 6 mA

DRM

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak reverse and off-state 
leakage current at V

RRM

, V

DRM

Maximum RMS insulation voltage V

Maximum critical rate of rise of off-state voltage dV/dt T

I

RRM,

I

DRM

INS

TJ = 130 °C, gate open circuit 20 mA

50 Hz

= 130 °C, linear to 0.67 V

J

DRM

12

3

W

3A

10

4.0
V

270

mAT

3000 (1 min)

3600 (1 s)

V

1000 V/μs

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Junction operating temperature range T

Storage temperature range T
Maximum internal thermal resistance,

junction to case per leg
Typical thermal resistance,

case to heatsink per module

to heatsink

Mounting torque ± 10 %

busbar 3

Approximate weight

Case style JEDEC

R

R

J

Stg

thJC

thCS

-40 to 130 °C

DC operation 0.22

Mounting surface flat, smooth and greased 0.1

A mounting compound is recommended and
the torque should be rechecked after a period

4

of 3 hours to allow for the spread of the
compound.

75 g

2.7 oz.

®

AAP GEN VII (TO-240AA)

°C/W

Nm

R CONDUCTION PER JUNCTION

DEVICES

VSK.105.. 0.04 0.048 0.063 0.085 0.125 0.033 0.052 0.067 0.088 0.127 °C/W

Note

• Table shows the increment of thermal resistance R

SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

when devices operate at different conduction angles than DC

thJC

UNITS

Revision: 21-Mar-14

3

Document Number: 94628

VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series

Average on-state current (A)

Maximum allowable case temperature (°C)

0 20406080100120

70

80

90

100

110

120

130

180°
120°

90°
60°
30°

RthJC (DC) = 0.22°C/W

0 20406080100120140160180

70

80

90

100

110

120

130

180°
120°

90°
60°
30°

DC

RthJC (DC) = 0.22°C/W

Average on-state current (A)

Maximum allowable case temperature (°C)

Average on-state current (A)

Maximum average on-state power loss (W)

020406080100120

0

20

40

60

80

100

120

140

160

180

200

180°
120°

90°
60°
30°

RMS limit

Per leg, Tj = 130°C

Vishay Semiconductors

Fig. 1 - Current Ratings Characteristics

260
240
220
200
180

180°
120°

90°
60°
30°

160
140

RMS limit

120
100

80
60
40
20

0

Maximum average on-state power loss (W)

Per leg, Tj = 130°C

0 20406080100120140160180

Average on-state current (A)

Fig. 4 - On-State Power Loss Characteristics

1800

At any rated load condition and with

rated Vrrm app lied following surge

1600

Initial Tj = Tj max

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100s

1400

DC

Fig. 2 - Current Ratings Characteristics

Revision: 21-Mar-14

Fig. 3 - On-State Power Loss Characteristics

1200

1000

Per leg

Peak half sine wave on-state current (A)

800

110100

Number of equal amplitude half cycle current pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

2000

Maximum Non-repetitive Surge Current

1800

1600

Versus Pulse Train Duration. Control

of conduction may not be maintained.

Initial T j = 130°C

No Voltage Reapplied

Rated Vrrm reapplied

1400

1200

1000

Peak half sine wave on-state current (A)

Per leg

800

0.01 0.1 1

Pulse train duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

4

Document Number: 94628

VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series

Total output current (A)

Maximum allowable ambient temperature (°C)

Maximum total power loss (W)

0 20 40 60 80 100 120 140

RthSA = 0.1 °C/W

0.2 °C/W

0.3 °C/W

0.5 °C/W
1 °C/W

0 40 80 120 160 200 240

0

100

200

300

400

500

600

700

800

900

120°

(rect)

3 x VSK.105 Series

three phase brid ge connected

Tj = 130°C

Vishay Semiconductors

400

350

300

250

180°
120°

90°
60°
30°

200

150

100

50

Maximum total on-state power loss (W)

0

0 40 80 120 160 200 240

Total RMS output current (A)

Fig. 7 - On-State Power Loss Characteristics

700

180°

600

500

400

∼

(sine)

180°

(rect)

300

RthSA = 0.1 °C/W

0.2 °C/W

0.3 °C/W

0.5 °C/W

0.7 °C/W
1 °C/W
2°C/W

VSK.105 Series

Per module

Tj = 130°C

0 20 40 60 80 100 120 140

Maximum allowable ambient temperature (°C)

RthSA = 0.1 °C/W

0.2 °C/W

0.3 °C/W

0.5 °C/W

0.7 °C/W
1 °C/W
2 °C/W

Revision: 21-Mar-14

Maximum total power loss (W)

200

100

2 x VSK.105 Series

single phase bridge connected

Tj = 130°C

0

0 40 80 120 160 200

Total output current (A)

Fig. 8 - On-State Power Loss Characteristics

Fig. 9 - On-State Power Loss Characteristics

0 20 40 60 80 100 120 140

Maximum allowable ambient temperature (°C)

5

Document Number: 94628

VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series

Vishay Semiconductors

1000

Per leg

100

10

Tj = 130°C

Instantaneous on-state current (A)

1

0.5 1.0 1.5 2.0 2.5 3.0 3.5

Instantaneous on-state voltage (V)

Fig. 10 - On-State Voltage Drop Characteristics

1

Tj = 25°C

(°C/W)

thJC

Steady state value
RthJC = 0.22 °C/W
(DC operation)

0.1

0.01
Per leg

0.001

Transient thermal impedance Z

0.001 0.01 0.1 1 10

Square wave pulse duration (s)

Fig. 11 - Thermal Impedance Z

100

Rectangular gate pulse
a)Recommended load line for

rated di/dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs

b)Recommended load line for

<= 30% rated di/dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs

10

1

Instantaneous gate voltage (V)

VGD

IGD

0.1

0.001 0.01 0.1 1 10 100 1000

(a)

(b)

TJ = - 40 ° C

TJ = 25 ° C

TJ = 1 2 5 ° C

IRK.105.. Series

VSK.

Instantaneous gate current (A)

Characteristics

thJC

(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, t p = 1 ms
(3) PGM = 30 W, t p = 2 ms
(4) PGM = 12 W, t p = 5 ms

(3)

(4)

Frequency Limited by PG(AV)

(2) (1)

Fig. 12 - Gate Characteristics

Revision: 21-Mar-14

6

Document Number: 94628

VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series

2 - Module type

1 - Vishay Semiconductors product

3

4

- Current code (105 A)

5 - Voltage code (see Voltage Ratings table)

Device code

2

1

43 5

KVS-VS T 105 / 16

- Circuit configuration (see Circuit Configuration table)

+

-

K1
(5)K2(7)G2(6)

G1

(4)

~

(1)

(2)

(3)

VSKT

1

2

3

4 5 7 6

+

-

K2
(7)G2(6)

~

(1)

(2)

(3)

VSKL

1

2

3

7 6

+

+

K1
(5)G1(4)

-

(1)

(2)

(3)

VSKN

1

2

3

4 5

Vishay Semiconductors

ORDERING INFORMATION TABLE

CIRCUIT CONFIGURATION

CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING

Two SCRs doubler circuit T

SCR/diode doubler circuit,
positive control

SCR/diode doubler circuit,
negative control

(1)

~

1

VSKH

H

2

3

4 5

+

(2)

-

(3)
K1
(5)G1(4)

L

SCR/diode common anodes N

Revision: 21-Mar-14

7

Document Number: 94628

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

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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including but not limited to the warranty expressed therein.

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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 08-Feb-17

1

Document Number: 91000