Vishay VS-VSKT105.. Series, VS-VSKH105.. Series, VS-VSKL105.. Series, VS-VSKN105.. Series Data Sheet
VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series
ADD-A-PAK
ADD-A-PAK Generation VII Power Modules
Thyristor/Diode and Thyristor/Thyristor, 105 A
PRODUCT SUMMARY
I
or I
T(AV)
F(AV)
Type Modules - Thyristor, Standard
MECHANICAL DESCRIPTION
The ADD-A-PAK Generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
105 A
Vishay Semiconductors
FEATURES
• High voltage
• Industrial standard package
• Low thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• Up to 1600 V
• High surge capability
• Easy mounting on heatsink
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
or I
T(AV)
F(AV)
I
O(RMS)
I
TSM,
I
FSM
2
I
t
2
I
t 200 kA2s
V
RRM
T
Stg
T
J
Revision: 21-Mar-14
85 °C 105
As AC switch 235
50 Hz 2000
60 Hz 2094
50 Hz 20
60 Hz 18.26
Range 400 to 1600 V
-40 to 130
-40 to 130
1
Document Number: 94628
A
kA2s
°C
VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
, MAXIMUM
RRM
REPETITIVE PEAK
REVERSE VOLTAGE
TYPE NUMBER
VOLTAGE
CODE
V
04 400 500 400
06 600 700 600
08 800 900 800
VS-VSK.105
10 1000 1100 1000
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current (thyristors) I
Maximum average forward current (diodes) I
T(AV)
F(AV)
V
, MAXIMUM
RSM
NON-REPETITIVE PEAK
V
REVERSE VOLTAGE
V
180° conduction, half sine wave,
= 85 °C
T
C
, MAXIMUM REPETITIVE
DRM
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
105
I
RRM, IDRM
AT 130 °C
mA
20
Maximum continuous RMS on-state current,
as AC switch
Maximum peak, one-cycle non-repetitive
on-state or forward current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t
Maximum value or threshold voltage V
Maximum value of on-state
slope resistance
Maximum peak on-state or forward voltage
Maximum non-repetitive rate of rise of
turned on current
Maximum holding current I
Maximum latching current I
Notes
(1)I2
t for time tx = I2t x t
(2)
Average power = V
(3)
16.7 % x x IAV < I < x I
(4)
I > x I
AV
T(TO)
x
x I
T(AV)
AV
+ rt x (I
T(RMS)
2
)
I
O(RMS)
I
TSM
or
I
FSM
T(TO)
r
t
V
TM
V
FM
dI/dt
H
L
or
I
(RMS)
t = 10 ms
t = 8.3 ms 2094
t = 10 ms
t = 8.3 ms 1760
t = 10 ms
t = 8.3 ms 18.26
t = 10 ms
t = 8.3 ms 12.91
t = 0.1 ms to 10 ms, no voltage reapplied
(1)
T
= TJ maximum
J
Low level
(2)
High level
Low level
(2)
High level
ITM = x I
IFM = x I
T
= 25 °C, from 0.67 V
J
I
= x I
TM
No voltage
reapplied
Sinusoidal
half wave,
100 % V
RRM
initial T
reapplied
No voltage
reapplied
Initial TJ = TJ maximum
100 % V
RRM
reapplied
(3)
TJ = TJ maximum
(4)
(3)
TJ = TJ maximum
(4)
T(AV)
TJ = 25 °C 1.8 V
F(AV)
,
, Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
T(AV)
DRM
I
(RMS)
= TJ maximum
J
TJ = 25 °C, anode supply = 6 V,
resistive load, gate open circuit
TJ = 25 °C, anode supply = 6 V, resistive load 400
235
2000
1682
20
14.14
kA2s
200 kA
0.98
1.12
2.7
2.34
m
150 A/μs
250
mA
A
2
s
V
Revision: 21-Mar-14
2
Document Number: 94628
VS-VSKT105.., VS-VSKH105.., VS-VSKL105.., VS-VSKN105.. Series
Vishay Semiconductors
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak gate current I
Maximum peak negative gate voltage - V
GM
G(AV)
GM
GM
TJ = -40 °C
Maximum gate voltage required to trigger V
GT
T
= 25 °C 2.5
J
T
= 125 °C 1.7
J
Anode supply = 6 V
resistive load
TJ = -40 °C
Maximum gate current required to trigger I
Maximum gate voltage that will not trigger V
Maximum gate current that will not trigger I
GD
GT
T
TJ = 125 °C, rated V
GD
TJ = 125 °C, rated V
= 25 °C 150
J
= 125 °C 80
J
Anode supply = 6 V
resistive load
applied 0.25 V
DRM
applied 6 mA
DRM
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and off-state
leakage current at V
RRM
, V
DRM
Maximum RMS insulation voltage V
Maximum critical rate of rise of off-state voltage dV/dt T
I
RRM,
I
DRM
INS
TJ = 130 °C, gate open circuit 20 mA
50 Hz
= 130 °C, linear to 0.67 V
J
DRM
12
3
W
3A
10
4.0
V
270
mAT
3000 (1 min)
3600 (1 s)
V
1000 V/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Junction operating temperature range T
Storage temperature range T
Maximum internal thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink per module
to heatsink
Mounting torque ± 10 %
busbar 3
Approximate weight
Case style JEDEC
R
R
J
Stg
thJC
thCS
-40 to 130 °C
DC operation 0.22
Mounting surface flat, smooth and greased 0.1
A mounting compound is recommended and
the torque should be rechecked after a period
4
of 3 hours to allow for the spread of the
compound.
75 g
2.7 oz.
®
AAP GEN VII (TO-240AA)
°C/W
Nm
R CONDUCTION PER JUNCTION
DEVICES
VSK.105.. 0.04 0.048 0.063 0.085 0.125 0.033 0.052 0.067 0.088 0.127 °C/W
Note
• Table shows the increment of thermal resistance R
SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
when devices operate at different conduction angles than DC
thJC
UNITS
Revision: 21-Mar-14
3
Document Number: 94628
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