Vishay VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71.. Data Sheet

VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71..

ADD-A-PAK

ADD-A-PAK Gen 7

Power Modules Standard Diodes, 80 A

PRODUCT SUMMARY

I

F(AV)

Type Modules - Diode, High Voltage

Package ADD-A-PAK Gen 7

Circuit

Two diodes doubler circuit, two

diodes common cathode, two diodes

common anode, single diode

MECHANICAL DESCRIPTION

The ADD-A-PAK Gen 7, new generation of ADD-A-PAK
module, combines the excellent thermal performances
obtained by the usage of exposed direct bonded copper
substrate, with advanced compact simple package solution
and simplified internal structure with minimized number of
interfaces.

80 A

Vishay Semiconductors

FEATURES

• High voltage

• Industrial standard package

• Low thermal resistance

• UL approved file E78996

• Designed and qualified for industrial level

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

BENEFITS

• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate

• Up to 1600 V

• High surge capability

• Easy mounting on heatsink

ELECTRICAL DESCRIPTION

These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

I

F(RMS)

I

FSM

2

t

I

2

I

t 112.5 kA2s

V

RRM

T

J

T

Stg

Revision: 05-Apr-16

110 °C 80

126

50 Hz 1500

60 Hz 1570

50 Hz 11.25

60 Hz 10.26

Range 400 to 1600 V

-40 to +150 °C

1

Document Number: 94626

A

kA2s

VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71..

Vishay Semiconductors

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM REPETITIVE PEAK

TYPE NUMBER

VOLTAGE

CODE

RRM

REVERSE VOLTAGE

V

04 400 500

06 600 700

08 800 900

VS-VSK.71

10 1000 1100

12 1200 1300

14 1400 1500

16 1600 1700

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current
at case temperature

Maximum RMS forward current I

Maximum peak, one-cycle forward,
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 112.5 kA2s

Low level value of threshold voltage V

High level value of threshold voltage V
Low level value of forward

slope resistance
High level value of forward

slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

f1

r

f2

FM

180° conduction, half sine wave

DC at 90 °C case temperature 126

t = 10 ms

t = 8.3 ms 1570

t = 10 ms

t = 8.3 ms 1320

t = 10 ms

t = 8.3 ms 10.26

t = 10 ms

t = 8.3 ms 7.23

(16.7 % x  x I
(I >  x I

(16.7 % x  x I

(I >  x I

IFM =  x I

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

< I <  x I

F(AV)

), TJ = TJ maximum 0.83

F(AV)

< I <  x I

F(AV)

), TJ = TJ maximum 2.89

F(AV)

, TJ = 25 °C, tp = 400 μs square wave 1.6 V

F(AV)

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE



RRM

Sinusoidal half wave, 
intitial T



RRM

), TJ = TJ maximum 0.73

F(AV)

), TJ = TJ maximum 3.22

F(AV)

V

= TJ maximum

J

I

MAXIMUM

RRM

AT T

80 A

110 °C

1500

1260

11.25

7.95

= 150 °C

J

mA

10

A

kA2s

V

m

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak reverse 
leakage current

Maximum RMS insulation voltage V

Revision: 05-Apr-16

I

RRM

TJ = 150 °C 10 mA

INS

50 Hz

3000 (1 min)

3600 (1 s)

2

Document Number: 94626

V

VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71..

Vishay Semiconductors

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Junction and storage temperature range T
Maximum internal thermal resistance,

junction to case per leg
Typical thermal resistance,

case to heatsink per module

Mounting torque ± 10 %

Approximate weight

Case style JEDEC

to heatsink

busbar 3

R CONDUCTION PER JUNCTION

DEVICES

VSK.71 0.075 0.088 0.113 0.155 0.228 0.06 0.094 0.12 0.158 0.23 °C/W

Note

• Table shows the increment of thermal resistance R

SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

, T

J

Stg

R

thJC

R

thCS

DC operation 0.28

Mounting surface flat, smooth and greased 0.1

A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.

®

when devices operate at different conduction angles than DC

thJC

-40 to +150 °C

°C/W

4

Nm

75 g

2.7 oz.

ADD-A-PAK Gen 7 (TO-240AA)

UNITS

Revision: 05-Apr-16

3

Document Number: 94626