Vishay VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71.. Data Sheet

VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71..
ADD-A-PAK
ADD-A-PAK Gen 7
Power Modules Standard Diodes, 80 A
PRODUCT SUMMARY
I
F(AV)
Type Modules - Diode, High Voltage
Package ADD-A-PAK Gen 7
Circuit
Two diodes doubler circuit, two
diodes common cathode, two diodes
common anode, single diode
The ADD-A-PAK Gen 7, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces.
80 A
Vishay Semiconductors
FEATURES
• High voltage
• Industrial standard package
• Low thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
BENEFITS
• Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate
• Up to 1600 V
• High surge capability
• Easy mounting on heatsink
ELECTRICAL DESCRIPTION
These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
I
F(RMS)
I
FSM
2
t
I
2
I
t 112.5 kA2s
V
RRM
T
J
T
Stg
Revision: 05-Apr-16
110 °C 80
126
50 Hz 1500
60 Hz 1570
50 Hz 11.25
60 Hz 10.26
Range 400 to 1600 V
-40 to +150 °C
1
Document Number: 94626
A
kA2s
VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71..
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
, MAXIMUM REPETITIVE PEAK
TYPE NUMBER
VOLTAGE
CODE
RRM
REVERSE VOLTAGE
V
04 400 500
06 600 700
08 800 900
VS-VSK.71
10 1000 1100
12 1200 1300
14 1400 1500
16 1600 1700
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current at case temperature
Maximum RMS forward current I
Maximum peak, one-cycle forward, non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 112.5 kA2s
Low level value of threshold voltage V
High level value of threshold voltage V Low level value of forward
slope resistance High level value of forward
slope resistance
Maximum forward voltage drop V
I
F(AV)
F(RMS)
I
FSM
F(TO)1
F(TO)2
r
f1
r
f2
FM
180° conduction, half sine wave
DC at 90 °C case temperature 126
t = 10 ms
t = 8.3 ms 1570
t = 10 ms
t = 8.3 ms 1320
t = 10 ms
t = 8.3 ms 10.26
t = 10 ms
t = 8.3 ms 7.23
(16.7 % x x I (I > x I
(16.7 % x x I
(I > x I
IFM = x I
No voltage reapplied
100 % V reapplied
No voltage reapplied
100 % V reapplied
< I < x I
F(AV)
), TJ = TJ maximum 0.83
F(AV)
< I < x I
F(AV)
), TJ = TJ maximum 2.89
F(AV)
, TJ = 25 °C, tp = 400 μs square wave 1.6 V
F(AV)
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
RRM
Sinusoidal half wave, intitial T
RRM
), TJ = TJ maximum 0.73
F(AV)
), TJ = TJ maximum 3.22
F(AV)
V
= TJ maximum
J
I
MAXIMUM
RRM
AT T
80 A
110 °C
1500
1260
11.25
7.95
= 150 °C
J
mA
10
A
kA2s
V
m
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse leakage current
Maximum RMS insulation voltage V
Revision: 05-Apr-16
I
RRM
TJ = 150 °C 10 mA
INS
50 Hz
3000 (1 min)
3600 (1 s)
2
Document Number: 94626
V
VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71..
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Junction and storage temperature range T Maximum internal thermal resistance,
junction to case per leg Typical thermal resistance,
case to heatsink per module
Mounting torque ± 10 %
Approximate weight
Case style JEDEC
to heatsink
busbar 3
R CONDUCTION PER JUNCTION
DEVICES
VSK.71 0.075 0.088 0.113 0.155 0.228 0.06 0.094 0.12 0.158 0.23 °C/W
Note
• Table shows the increment of thermal resistance R
SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
, T
J
Stg
R
thJC
R
thCS
DC operation 0.28
Mounting surface flat, smooth and greased 0.1
A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound.
®
when devices operate at different conduction angles than DC
thJC
-40 to +150 °C
°C/W
4
Nm
75 g
2.7 oz.
ADD-A-PAK Gen 7 (TO-240AA)
UNITS
Revision: 05-Apr-16
3
Document Number: 94626
VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71..
Average forward current (A)
Maximum allowable case temperature (°C)
020406080100
90
100
110
120
130
140
150
180° 120°
90° 60° 30°
RthJC (DC) = 0.28°C/W
Average forward current (A)
Maximum average forward power loss (W)
0 102030405060708090
0
20
40
60
80
100
120
180° 120°
90° 60° 30°
RMS limit
Per leg, Tj = 150°C
Peak half sine wave forward current (A)
Number of equal amplitude half cycle current pulses (N)
110100
400
600
800
1000
1200
1400
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
Per leg
Vishay Semiconductors
Fig. 1 - Current Ratings Characteristics
150
RthJC (DC) = 0.28°C/W
140
130
120
DC
110
180° 120°
90°
100
60°
Maximum allowable case temperature (°C)
30°
90
0 20406080100120140
Average forward current (A)
Fig. 2 - Current Ratings Characteristics
160
140
120
100
80
180° 120°
90° 60° 30°
DC
RMS limit
60
40
20
Maximum average forward power loss (W)
0
Per leg, Tj = 150°C
0 20 40 60 80 100 120 140
Average forward current (A)
Fig. 4 - Foward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 3 - Forward Power Loss Characteristics
Revision: 05-Apr-16
1600
1400
1200
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration
Initial T j = 15 0°C
No Voltage Reapplied
Rated Vrrm reapplied
1000
800
600
400
Peak half sine wave forward current (A)
200
Per leg
0.01 0.1 1
Pulse train duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
4
Document Number: 94626
VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71..
Total RMS output current (A)
Maximum total forward power loss (W)
Maximum allowable ambient temperature (°C)
0 20 40 60 80 100 120 140 16
RthSA = 0.5 °C/W
0.7 °C/W 1 °C/W
1.5 °C/W 2 °C/W 3 °C/W 7 °C/W
0 20406080100120140
0
20
40
60
80
100
120
140
160
180°
(Sine)
VSK.71 Series
Per leg
Tj = 150°C
DC
0
Total output current (A)
Maximum allowable ambient temperature (°C)
Maximum total power loss (W)
0 20 40 60 80 100 120 140 160
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.4 °C/W
0.7 °C/W
1.5 °C/W
0 50 100 150 200
0
100
200
300
400
500
600
120°
(rect)
3 x VSK.71 Series
three phase bridge connected
Tj = 150°C
Vishay Semiconductors
Fig. 7 - Forward Power Loss Characteristics
600
180°
500
(sine)
180° (rect)
400
300
200
100
Maximum total power loss (W)
single ph ase br idg e conn ected
0
0 50 100 150 200
Total output current (A)
Fig. 8 - Forward Power Loss Characteristics
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W 1 °C/W 2 °C/W
2 x VSK.71 Series
Tj = 150°C
0 20 40 60 80 100 120 140 16
Maximum allowable ambient temperature (°C)
Revision: 05-Apr-16
Fig. 9 - Forward Power Loss Characteristics
5
Document Number: 94626
VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71..
- Module type
- Circuit configuration (see Circuit Configuration table)
- Current code (80 A)
- Voltage code (see Voltage Ratings table)
Device code
KD71/16
1
- Vishay Semiconductors product
2
3
4
5
521 43
VS-VS
Vishay Semiconductors
1000
Per leg
100
10
Tj = 150°C
Instantaneous forward current (A)
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous forward voltage (V)
Fig. 10 - Forward Voltage Characteristics
1
Tj = 25°C
(°C/W)
thJC
0.1
0.01
Transient thermal impedance Z
Steady state value RthJC = 0.28 °C/W (DC operation)
0.001 0.01 0.1 1 10
Fig. 11 - Thermal Impedance Z
ORDERING INFORMATION TABLE
Per leg
Square wave pulse duration (s)
Characteristics
thJC
Revision: 05-Apr-16
6
Document Number: 94626
VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71..
VSKD...
~
(1) (3)(2)
-+
1
2
3
+- -
VSKC...
(1) (3)(2)
1
2
3
- ++
VSKJ...
(1) (3)(2)
1
2
3
-+
VSKE...
1
2
3
(3)(1)
(2)
CIRCUIT CONFIGURATION
CIRCUIT DESCRIPTION
Two diodes doubler circuit D
Two diodes common cathode C
CIRCUIT
CONFIGURATION CODE
Vishay Semiconductors
CIRCUIT DRAWING
Two diodes common anode J
Single diode E
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95369
Revision: 05-Apr-16
7
Document Number: 94626
ADD-A-PAK Generation VII - Diode
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay Semiconductors
Viti M5 x 0.8
Screws M5 x 0.8
18 (0.7) REF.
35 REF.
22.6 ± 0.2
30 ± 0.5
29 ± 0.5
(1 ± 0.020)
(1.18 ± 0.020)
(0.89 ± 0.008)
6.3 ± 0.2 (0.248 ± 0.008)
80 ± 0.3 (3.15 ± 0.012)
1
15 ± 0.5 (0.59 ± 0.020)
20 ± 0.5 (0.79 ± 0.020)
92 ± 0.75 (3.6 ± 0.030)
2
20 ± 0.5 (0.79 ± 0.020)
3
6.7 ± 0.3 (0.26 ± 0.012)
24 ± 0.5
(1 ± 0.020)
4 5 7 6
Document Number: 95369 Revision: 11-Nov-08 1
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Vishay
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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Revision: 02-Oct-12
1
Document Number: 91000
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