Vishay VS-VSK.250PbF Series, VS-VSK.270PbF Series, VS-VSK.320PbF Series Data Sheet

VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series

MAGN-A-PAK

Standard Recovery Diodes, 250 A to 320 A

PRODUCT SUMMARY

I

F(AV)

Type Modules - Diode, High Voltage

Package MAGN-A-PAK

Circuit Two diodes doubler circuit

Vishay Semiconductors

(MAGN-A-PAK Power Modules)

FEATURES

• High voltage

• Electrically isolated base plate

250 A to 320 A

• 3000 V

• Industrial standard package

• Simplified mechanical designs, rapid assembly

• High surge capability

• Large creepage distances

• UL approved file E78996

• Designed and qualified for industrial level

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION

This new VS-VSK series of MAGN-A-PAKs uses
high voltage power diodes in two basic configurations. The
semiconductors are electrically isolated from the metal
base, allowing common heatsinks and compact assemblies
to be built. They can be interconnected to form single phase
or three phase bridges and the single diode module can be
used in conjunction with the thyristor modules as a
freewheel diode. These modules are intended for general
purpose applications such as battery chargers, welders and
plating equipment and where high voltage and high current
are required (motor drives, etc.).

isolating voltage

RMS

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VSK.250.. VSK.270.. VSK.320.. UNITS

I

F(AV)

I

F(RMS)

I

FSM

2

t

I

2

I

t 2460 3980 5110 kA2s

V

RRM

T

J

Revision: 28-May-14

T

C

50 Hz 7015 8920 10 110

60 Hz 7345 9430 10 580

50 Hz 246 398 511

60 Hz 225 363 466

250 270 320 A

100 100 100 °C

393 424 502

400 to 3000 V

-40 to +150 °C

1

Document Number: 93581

A

kA2s

VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series

Vishay Semiconductors

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

MAXIMUM REPETITIVE

TYPE NUMBER

VOLTAGE

CODE

RRM,

PEAK REVERSE VOLTAGE

V

04 400 500

VS-VSK.250
VS-VSK.270
VS-VSK.320

08 800 900

12 1200 1300

16 1600 1700

20 2000 2100

VS-VSK.270 30 3000 3100

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VSK.250 VSK.270 VSK.320 UNITS

Maximum average forward
current at case temperature

Maximum RMS forward current I

Maximum peak, one-cycle
forward, non-repetitive
surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 2460 3980 5110 kA2s

Low level value of 
threshold voltage

High level value of
threshold voltage

Low level forward
slope resistance

High level forward
slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

V

F(TO)1

V

F(TO)2

r

f1

r

(I >  x I

f2

FM

180° conduction, half sine wave

As AC switch 393 424 502

t = 10 ms

t = 8.3 ms 7345 9340 10 580

t = 10 ms

t = 8.3 ms 6180 7850 8900

t = 10 ms

t = 8.3 ms 225 363 466

t = 10 ms

t = 8.3 ms 159 257 330

(16.7 % x  x I
T

= TJ maximum

J

(I >  x I

(16.7 % x  x I

= TJ maximum

T

J

IFM =  x I
Average power = V

No voltage
reapplied

100 % V

RRM

reapplied

No voltage
reapplied

100 % V

RRM

reapplied

< I <  x I

F(AV)

), TJ = TJ maximum 0.92 0.87 0.86

F(AV)

< I <  x I

F(AV)

), TJ = TJ maximum 0.49 0.81 0.44

F(AV)

, TJ = TJ maximum, 180° conduction

F(AV)

F(TO)

x I

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE



Sinusoidal half wave,
initial T

= TJ maximum

J



), 

F(AV)

), 

F(AV)

+ rf x (I

F(AV)

F(RMS)

I

MAXIMUM

RRM

V

AT 150 °C

mA

50

250 270 320 A

100 100 100 °C

7015 8920 10 110

5900 7500 8500

246 398 511

174 281 361

0.79 0.74 0.69

0.63 0.94 0.59

2

)

1.29 1.48 1.28 V

A

kA2s

V

m

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak reverse
leakage current

RMS insulation voltage V

Revision: 28-May-14

I

RRM

INS

TJ = 150 °C 50 mA

50 Hz, circuit to base, all terminals shorted, t = 1 s 3000 V

2

Document Number: 93581

VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series

Vishay Semiconductors

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS

Maximum junction operating and storage
temperature range

Maximum thermal resistance, 
junction to case per junction

Maximum resistance, case to heatsink 
per module

Mounting torque
± 10 %

Approximate weight

Case style MAGN-A-PAK

MAP to heatsink

busbar to MAP 8 to 10

T

, T

J

Stg

DC operation 0.16 0.125

Mounting surface flat, smooth and
greased

A mounting compound is recommended
and the torque should be rechecked 
after a period of about 3 hours to allow for
the spread of the compound.

R

R

thJC

thCS

VSK.250 VSK.270 VSK.320

R CONDUCTION PER JUNCTION

SINUSOIDAL CONDUCTION

DEVICE

180° 120° 90° 60° 30° 180° 120° 90° 60° 30°

VSK.250 0.009 0.010 0.014 0.020 0.032 0.007 0.011 0.015 0.021 0.033

VSK.320 0.008 0.010 0.013 0.020 0.032 0.007 0.011 0.015 0.020 0.033

Note

• The table above shows the increment of thermal resistance R

AT T

MAXIMUM

J

when devices operate at different conduction angles than DC

thJC

RECTANGULAR CONDUCTION

AT TJ MAXIMUM

VALUES

-40 to +150 °C

0.035

4 to 6

800 g

30 oz.

UNITS

K/W

Nm

UNITS

K/WVSK.270 0.008 0.012 0.014 0.020 0.032 0.007 0.011 0.015 0.020 0.033

Revision: 28-May-14

3

Document Number: 93581

VS-VSK.250PbF, VS-VSK.270PbF, VS-VSK.320PbF Series

80

90

100

110

120

130

140

150

0 50 100 150 200 250 300 350 400

DC

30°

60°

90°

120°

180°

Maximu m Allow able C a se Tem perat ure (°C)

Conduction Period

Average Forward Current (A)

VSK.250 .. Se ri e s
R (DC) = 0.16 K/W

thJC

0

50

100

150

200

250

300

350

400

450

0 50 10 0 150 200 250 300 350 400

DC
180°
120°

90°

60°

30°

Average Forward Current (A)

RM S Li m i t

Maximum Average Forward Power Loss (W)

Conduction Period

VSK.250.. Series
T = 150°C

J

Vishay Semiconductors

150

140

VSK.250 .. Seri e s
R (DC) = 0.16 K/W

thJC

130

120

Conduction Angle

110

100

90

80

Maximum Allowable Case Temperature (°C)

0 50 100 150 200 250 300

30°

60°

90°

120°

Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics

180°

300

250

200

180°
120°

90°
60°
30°

RM S Lim it

150

100

50

0

Maximum Ave rage Forward Power Loss (W)

0 50 100 150 200 250

Cond uct ion An gle

VSK.250.. Series
T = 15 0° C

J

Ave rag e Forw ard Curre nt (A)

Fig. 3 - Forward Power Loss Characteristics

Fig. 2 - Current Ratings Characteristics

Revision: 28-May-14

600

500

400

180°

(Sine)

300

200

VSK.25 0.. Se ri e s

100

Maximum Total Forward Power Loss (W)

0

0 50 100 150 200 250 3 00 3 50 400

Pe r Ju nc t io n

T = 15 0° C

J

Total RMS Output Current (A)

Fig. 5 - Forward Power Loss Characteristics

Fig. 4 - Forward Power Loss Characteristics

R

t

h

S

A

0

.

0

=

8

0

K

0

/

.

0

W

2

K

W

W

W

W

/

W

­D

e

l

t

a

R

DC

.

1

2

K

/

0

.

2

K

/

0

.

2

5

K

/

0

.

4

K

/

0

.

6

K

/

W

0 25 50 75 100 125 150

Maximum Allowable Ambient Temperature (°C)

4

Document Number: 93581